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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| PHD20N06T,118 DISTI # V36:1790_06539918 | Nexperia | PHD20N06T/SOT428/DPAK | 0 |
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| PHD20N06T,118 DISTI # PHD20N06T,118-ND | Nexperia | MOSFET N-CH 55V 18A DPAK Min Qty: 10000 Container: Tape & Reel (TR) | Temporarily Out of Stock |
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| PHD20N06T,118 DISTI # PHD20N06T,118 | Nexperia | Trans MOSFET N-CH 55V 18A 3-Pin(2+Tab) DPAK T/R (Alt: PHD20N06T,118) Min Qty: 10000 Container: Tape and Reel | Europe - 0 | |
| PHD20N06T,118 DISTI # PHD20N06T,118 | Nexperia | Trans MOSFET N-CH 55V 18A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: PHD20N06T,118) RoHS: Compliant Min Qty: 10000 Container: Reel | Americas - 0 |
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| PHD20N06T,118 DISTI # PHD20N06T118 | Nexperia | Trans MOSFET N-CH 55V 18A 3-Pin(2+Tab) DPAK T/R - Bulk (Alt: PHD20N06T118) RoHS: Not Compliant Min Qty: 1250 Container: Bulk | Americas - 0 | |
| PHD20N06T,118 DISTI # PHD20N06T,118 | Nexperia | Trans MOSFET N-CH 55V 18A 3-Pin(2+Tab) DPAK T/R - Bulk (Alt: PHD20N06T,118) Min Qty: 1250 Container: Bulk | Americas - 0 |
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| PHD20N06T,118 | NXP Semiconductors | Now Nexperia PHD20N06T - Power Field-Effect Transistor, 18A I(D), 55V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS: Compliant | 150 |
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| PHD20N06T | ISC | DPAK/TO-252 | 5000 |
| Immagine | Parte # | Descrizione |
|---|---|---|
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Mfr.#: PHD20N06T,118 OMO.#: OMO-PHD20N06T-118 |
MOSFET TAPE13 MOSFET |
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Mfr.#: PHD20N06T,118 OMO.#: OMO-PHD20N06T-118-NEXPERIA |
IGBT Transistors MOSFET TAPE13 MOSFET |
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Mfr.#: PHD20161B-2R2MS OMO.#: OMO-PHD20161B-2R2MS-1190 |
Nuovo e originale |
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Mfr.#: PHD20161B-R47MS OMO.#: OMO-PHD20161B-R47MS-1190 |
Nuovo e originale |
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Mfr.#: PHD20161T-1R0MS OMO.#: OMO-PHD20161T-1R0MS-1190 |
Nuovo e originale |
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Mfr.#: PHD20161T-4R7MS OMO.#: OMO-PHD20161T-4R7MS-1190 |
Nuovo e originale |
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Mfr.#: PHD20161T-R47MS OMO.#: OMO-PHD20161T-R47MS-1190 |
Nuovo e originale |
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Mfr.#: PHD20N06LT OMO.#: OMO-PHD20N06LT-1190 |
Nuovo e originale |
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Mfr.#: PHD20N06T118 OMO.#: OMO-PHD20N06T118-1190 |
Now Nexperia PHD20N06T - Power Field-Effect Transistor, 18A I(D), 55V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 |
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Mfr.#: PHD20S-E OMO.#: OMO-PHD20S-E-1190 |
Nuovo e originale |