IRFAF50

Mfr. #:: IRFAF50
Produttore:: Rochester Electronics, LLC
Descrizione:: 6.2 A, 900 V, 1.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: IRFAF50 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
Pagamento:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Attributo del prodotto
Valore attributo

Tags: IRFAF, IRFA, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRFAF50 Descrizione

***ernational Rectifier: 900V Single N-Channel Hi-Rel MOSFET in a TO-204AA package

***ponent Stockers USA: 6.2 A 900 V 1.85 ohm N-CHANNEL Si POWER MOSFET TO-204AA

***(Formerly Allied Electronics): HEXFET, Hi-Rel 900V, 6.2A, 1.6 ohm

***(Formerly Allied Electronics): IRFPF50PBF N-channel MOSFET Transistor, 6.7 A, 900 V, 3-Pin TO-247AC

***ure Electronics: Single N-Channel 900 V 1.6 Ohms Flange Mount Power Mosfet - TO-247AC

***ment14 APAC: MOSFET, N, 900V, 6.7A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:6.7A; Drain Source Voltage Vds:900V; On Resistance Rds(on):1.6ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.7A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.65°C/W; Lead Spacing:5.45mm; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Pd:190W; Power Dissipation Pd:190W; Pulse Current Idm:27A; Termination Type:Through Hole; Voltage Vds:900V; Voltage Vds Typ:900V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***icroelectronics: N-CHANNEL 900V - 1.1 OHM - 8A TO-220 ZENER PROTECTED SUPERMESH MOSFET

***ical: Trans MOSFET N-CH 900V 8A 3-Pin(3+Tab) TO-220AB Tube

***r Electronics: Power Field-Effect Transistor, 8A I(D), 900V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ark: N CHANNEL MOSFET, 900V, 8A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:8A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; MSL:- RoHS Compliant: Yes

***emi: Power MOSFET, N-Channel, QFET®, 900 V, 8.0 A, 1.4 Ω, TO-220

***ure Electronics: N-Channel 900 V 1.4 Ohm Flange Mount Mosfet - TO-220-3

***Yang: Trans MOSFET N-CH 900V 8A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube

***r Electronics: Power Field-Effect Transistor, 8A I(D), 900V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:900V; Continuous Drain Current, Id:8A; On Resistance, Rds(on):1.4ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220 ;RoHS Compliant: Yes

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

***nell: MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:900V; Current, Id Cont:8A; Resistance, Rds On:1.12ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220; Termination Type:Through Hole; Operating Temperature Range:-55°C to +150°C; Current, Idm Pulse:32A; External Length / Height:4.83mm; No. of Pins:3; Power Dissipation:205W; Power, Pd:205W; Resistance, Rds on Max:1.4ohm; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:900V; Voltage, Vgs th Max:5V; Width, External:10.67mm

***ure Electronics: Single N-Channel 900 V 0.8 Ohm 42 nC CoolMOS Power Mosfet - TO-220-3FP

***et: Transistor MOSFET N-Channel 900V 6.9A 3-Pin TO-220FP Tube

*** Stop Electro: Power Field-Effect Transistor, 6.9A I(D), 900V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon: 900V CoolMOS C3 is Infineon's third series of CoolMOS with market entry in 2001. C3 is the "working horse" of the portfolio. | Summary of Features: Low specific on-state resistance (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Consumer; PC power; Adapter; Lighting

***ure Electronics: N-Channel 900 V 1.3 Ohm Flange Mount SuperMESH Power Mosfet - TO-247

***icroelectronics: N-CHANNEL 900V - 1.1 OHM - 8A TO-247 ZENER PROTECTED SUPERMESH MOSFET

***r Electronics: Power Field-Effect Transistor, 8A I(D), 900V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

***ark: N CHANNEL MOSFET, 900V, 8A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:8A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; MSL:- RoHS Compliant: Yes

***ark: MOSFET, N CH, 900V, 1.12OHM, 8A, TO-220F-3; Transistor Polarity:N Channel; Conti

***emi: Power MOSFET, N-Channel, QFET®, 900 V, 8 A, 1.4 Ω, TO-220F

***ure Electronics: N-Channel 900 V 1.4 Ohm Flange Mount Mosfet - TO-220F

***Yang: Trans MOSFET N-CH 900V 8A 3-Pin(3+Tab) TO-220F T/R - Rail/Tube

***r Electronics: Power Field-Effect Transistor, 8A I(D), 900V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***nell: MOSFET, N CH, 900V, 8A, TO-220F-3; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:900V; On Resistance Rds(on):1.12ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:68W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220F; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
IRFAF50	International Rectifier	RoHS: Not Compliant	644	1000:$6.4200 500:$6.7600 100:$7.0400 25:$7.3400 1:$7.9000
IRFAF50	International Rectifier	6.2 A, 900 V, 1.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA	1

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: IRFS3307TRLPBF OMO.#: OMO-IRFS3307TRLPBF	MOSFET MOSFT 75V 130A 6.3mOhm 120nC
	Mfr.#: IRFR7546TRPBF OMO.#: OMO-IRFR7546TRPBF	MOSFET 60V StrongIRFET Power Mosfet
	Mfr.#: IRFM350 OMO.#: OMO-IRFM350-1190	Trans MOSFET N-CH 400V 14A 3-Pin(3+Tab) TO-254AA
	Mfr.#: IRF460LC OMO.#: OMO-IRF460LC-1190	Nuovo e originale
	Mfr.#: IRFF9220 OMO.#: OMO-IRFF9220-1190	Trans MOSFET P-CH 200V 2.5A 3-Pin TO-39 - Bulk (Alt: IRFF9220)
	Mfr.#: IRFIBF20G/ SIHFIBF20G OMO.#: OMO-IRFIBF20G-SIHFIBF20G-1190	Nuovo e originale
	Mfr.#: IRFK6H150+ OMO.#: OMO-IRFK6H150--1190	Nuovo e originale
	Mfr.#: IRFR234BTMFP001 OMO.#: OMO-IRFR234BTMFP001-1190	Nuovo e originale
	Mfr.#: IRFR1N60ATRRPBF OMO.#: OMO-IRFR1N60ATRRPBF-VISHAY	RF Bipolar Transistors MOSFET N-Chan 600V 1.4 Amp
	Mfr.#: IRFU024PBF OMO.#: OMO-IRFU024PBF-VISHAY	MOSFET N-CH 60V 14A I-PAK

Disponibilità

Azione:: Available
Su ordine:: 2000
Inserisci la quantità:

Il prezzo attuale di IRFAF50 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~9,63 USD~~; ~~9,63 USD~~

10: ~~9,15 USD~~; ~~91,48 USD~~

100: ~~8,67 USD~~; ~~866,70 USD~~

500: ~~8,19 USD~~; ~~4 092,75 USD~~

1000: ~~7,70 USD~~; ~~7 704,00 USD~~

A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.

Iniziare con

IRFAF 4
IRFA 26
IRF 8615

Prodotti più recenti

1410-L110 Series Thermal PCB-Mount Circuit Breaker

Single pole press-to-reset thermal circuit breaker with extremely fast overload switching performance (R-type TO CBE to EN 60934)
KPZ1608-HR Series Ferrite Beads

TDK's KPZ1608-HR series is qualified to AEC‐Q200 and their compact size and robustness makes them ideal for use in demanding automotive applications such as in-vehicle electronic control units
Pro-Grade Thermal Camera for Smartphones

FLIR’s pro-grade thermal camera for smartphones help users quickly get to the job of finding hidden problems, documenting repairs and sharing images over Wi-Fi.
Straight and Right Angle Male PCB Pins

Mill-Max's straight and right angle pins are precision-machined to assure consistent bends each time and offer full radius shaped tips to simplify fabrication.
A6FR Piano DIP Switches

Omron's A6FR piano DIP switches are available in both ON and OFF-set soldering, and short and long actuators.

More Newest Products

IRFAF50

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes