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FGL60N100BNTD

FGL60N100BNTD
Mfr. #:
FGL60N100BNTD
Produttore:
ON Semiconductor / Fairchild
Descrizione:
IGBT Transistors HIGH POWER
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FGL60N100BNTD Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
Transistor IGBT
RoHS:
Y
Tecnologia:
si
Pacchetto/custodia:
TO-264-3
Stile di montaggio:
Foro passante
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
1000 V
Tensione di saturazione collettore-emettitore:
1.5 V
Tensione massima dell'emettitore di gate:
25 V
Corrente continua del collettore a 25 C:
60 A
Pd - Dissipazione di potenza:
180 W
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Serie:
FGL60N100BNTD
Confezione:
Tubo
Corrente continua del collettore Ic Max:
60 A
Altezza:
26 mm
Lunghezza:
20 mm
Larghezza:
5 mm
Marca:
ON Semiconductor / Fairchild
Corrente continua del collettore:
60 A
Corrente di dispersione gate-emettitore:
+/- 500 nA
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
375
sottocategoria:
IGBT
Parte # Alias:
FGL60N100BNTD_NL
Unità di peso:
0.238311 oz
Tags
FGL60N100BNT, FGL60N100B, FGL60N10, FGL60N1, FGL60N, FGL60, FGL6, FGL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Source Electronics
IGBT 1000V 60A 180W TO264 / Trans IGBT Chip N-CH 1000V 60A 180000mW 3-Pin(3+Tab) TO-264 Tube
***ure Electronics
FGL60N100 Series 1000 V 60 A Through Hole NPT Trench IGBT - TO-264-3L
***ark
TRANSISTOR,IGBT,N-CHAN+DIODE,1kV V(BR)CES,60A I(C),TO-264
***rchild Semiconductor
Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers the optimum performance for hard switching application such as UPS, welder applications.
***nell
IGBT, NPT, TO-264; Transistor Type:IGBT; Transistor Polarity:NPN; Voltage, Vces:1000V; Current Ic Continuous a Max:60A; Voltage, Vce Sat Max:2.9V; Power Dissipation:180W; Case Style:TO-264; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:1000V; Current Ic @ Vce Sat:60A; Current, Icm Pulsed:120A; Power, Pd:180W; Time, Rise:320ns
***th Star Micro
Trench insulated gate bipolar transistors (IGBTs) with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for Induction Heating ( I-H ) applications Product Highlights: High Speed Switching Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60A High Input Impedance Built-in Fast Recovery Diode
***ical
Trans IGBT Chip N=-CH 600V 80A 250000mW 3-Pin(3+Tab) TO-264 Rail
***ource
Discrete, Short Circuit Rated IGBT with Diode; Package: TO-264; No of Pins: 3; Container: Rail
***ure Electronics
SGL50N60RUFD Series 600 V 80 A Flange Mount Short Circuit Rated IGBT -TO-264
***ment14 APAC
SINGLE IGBT, 600V, 80A; Transistor Type:; SINGLE IGBT, 600V, 80A; Transistor Type:IGBT; DC Collector Current:80A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:250W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C
***rchild Semiconductor
Fairchild’s RUFD series of Insulated Gate Bipolar Transistors(IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.
***ark
Igbt Single Transistor, 160 A, 2.6 V, 250 W, 600 V, To-264, 3 Rohs Compliant: Yes
***ource
Discrete, High Performance IGBT with Diode; Package: TO-264; No of Pins: 3; Container: Rail
***ical
Trans IGBT Chip N=-CH 600V 160A 250000mW 3-Pin(3+Tab) TO-264 Rail
***ure Electronics
SGL160N60UFD Series 600 V 160 A Flange Mount Ultra-Fast IGBT -TO-264
***nell
IGBT, ULTRAFAST, 600V, 160A, TO-264; DC Collector Current: 160A; Collector Emitter Saturation Voltage Vce(on): 2.6V; Power Dissipation Pd: 250W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-264; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Transistor Type: IGBT
***rchild Semiconductor
Fairchild’s RUFD series of Insulated Gate Bipolar Transistors(IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, UPS and general inverters where short circuit ruggedness is a required feature.
***ical
Trans IGBT Chip N-CH 1200V 64A 500000mW 3-Pin(3+Tab) TO-264 Rail
***ure Electronics
FGL40N120AND Series 1200 V 64 A Flange Mount NPT IGBT - TO-264
***nell
IGBT,N CH,FAST,W/DIO,1200V,64A,TO264; Transistor Type: IGBT; DC Collector Current: 64A; Collector Emitter Voltage Vces: 1.2kV; Power Dissipation Pd: 500W; Collector Emitter Voltage V(br)ceo: 1.2kV; Operating Temperature Range
***rchild Semiconductor
Employing NPT technology, Fairchild's AN series of IGBT provides low conduction and switching losses. The AN series offers an solution for application such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS).
***ical
Trans IGBT Chip N=-CH 1200V 70A 368000mW 3-Pin(3+Tab) TO-264 Rail
***ure Electronics
FGL35N120FTD Series 1200 V 35 A Field Stop Trench IGBT - TO-264 3L
***rchild Semiconductor
Using advanced field stop trench IGBT technology, Fairchild’s 1200V trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder applications.
Parte # Mfg. Descrizione Azione Prezzo
FGL60N100BNTD
DISTI # V99:2348_06359681		ON SemiconductorTrans IGBT Chip N-CH 1000V 60A 180000mW 3-Pin(3+Tab) TO-264 Tube145
  • 750:$3.4731
  • 1125:$3.4731
  • 375:$3.5440
  • 10:$4.1060
  • 1:$4.5110
FGL60N100BNTD
DISTI # FGL60N100BNTDFS-ND		ON SemiconductorIGBT 1000V 60A 180W TO264
RoHS: Compliant
Min Qty: 1
Container: Tube		72In Stock
  • 1125:$3.6719
  • 750:$4.3187
  • 375:$4.7913
  • 10:$6.1100
  • 1:$6.7800
FGL60N100BNTDTU
DISTI # FGL60N100BNTDTU-ND		ON SemiconductorIGBT 1000V 60A 180W TO264
RoHS: Compliant
Min Qty: 375
Container: Tube		Limited Supply - Call
  • 375:$3.5235
FGL60N100BNTD
DISTI # 31599406		ON SemiconductorTrans IGBT Chip N-CH 1000V 60A 180000mW 3-Pin(3+Tab) TO-264 Tube155
  • 5:$4.6368
FGL60N100BNTD
DISTI # 31035706		ON SemiconductorTrans IGBT Chip N-CH 1000V 60A 180000mW 3-Pin(3+Tab) TO-264 Tube145
  • 10:$4.9910
  • 3:$5.4740
FGL60N100BNTD
DISTI # FGL60N100BNTD		ON SemiconductorTrans IGBT Chip N-CH 1KV 60A 3-Pin(3+Tab) TO-264 Rail (Alt: FGL60N100BNTD)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€3.1900
  • 10:€2.8900
  • 25:€2.7900
  • 50:€2.6900
  • 100:€2.5900
  • 500:€2.4900
  • 1000:€2.2900
FGL60N100BNTD
DISTI # FGL60N100BNTD		ON SemiconductorTrans IGBT Chip N-CH 1KV 60A 3-Pin(3+Tab) TO-264 Rail - Rail/Tube (Alt: FGL60N100BNTD)
RoHS: Compliant
Min Qty: 375
Container: Tube		Americas - 0
  • 375:$4.2900
  • 750:$4.2900
  • 1500:$4.2900
  • 2250:$4.2900
  • 3750:$4.2900
FGL60N100BNTD
DISTI # 09J6255		ON SemiconductorTrans IGBT Chip N-CH 1KV 60A 3-Pin(3+Tab) TO-264 Rail - Bulk (Alt: 09J6255)
RoHS: Compliant
Min Qty: 1
Container: Bulk		Americas - 0
  • 1:$4.8300
FGL60N100BNTDTU
DISTI # FGL60N100BNTDTU		ON SemiconductorTrans IGBT Chip N-CH 1KV 60A 3-Pin(3+Tab) TO-264 Rail (Alt: FGL60N100BNTDTU)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€2.2900
  • 10:€2.1900
  • 25:€2.0900
  • 50:€1.9900
  • 100:€1.9900
  • 500:€1.8900
  • 1000:€1.8900
FGL60N100BNTDTU
DISTI # FGL60N100BNTDTU		ON SemiconductorTrans IGBT Chip N-CH 1KV 60A 3-Pin(3+Tab) TO-264 Rail - Rail/Tube (Alt: FGL60N100BNTDTU)
RoHS: Compliant
Min Qty: 375
Container: Tube		Americas - 0
  • 375:$4.4900
  • 750:$4.4900
  • 1500:$4.3900
  • 2250:$4.3900
  • 3750:$4.2900
FGL60N100BNTD
DISTI # 09J6255		ON SemiconductorIGBT, SINGLE, N-CH, 1KV, 60A, TO-247,DC Collector Current:60A,Collector Emitter Saturation Voltage Vce(on):2.5V,Power Dissipation Pd:180W,Collector Emitter Voltage V(br)ceo:1kV,No. of Pins:3Pins,Operating Temperature Max:150°C RoHS Compliant: Yes212
  • 1:$5.0300
FGL60N100BNTDTU
DISTI # 60J0636		ON SemiconductorTRANSISTOR,IGBT,N-CHAN+DIODE,1kV V(BR)CES,42A I(C),TO-264 RoHS Compliant: Yes0
  • 500:$2.3600
  • 250:$2.4300
  • 100:$2.9100
  • 50:$3.3600
  • 25:$3.5800
  • 10:$4.0900
  • 1:$4.7200
FGL60N100BNTDTUFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 60A I(C), 1000V V(BR)CES, N-Channel, TO-264AA
RoHS: Compliant		25
  • 1000:$2.5100
  • 500:$2.6500
  • 100:$2.7500
  • 25:$2.8700
  • 1:$3.0900
FGL60N100BNTD
DISTI # 512-FGL60N100BNTD		ON SemiconductorIGBT Transistors HIGH POWER
RoHS: Compliant		0
    FGL60N100BNTDTU
    DISTI # 512-FGL60N100BNTDTU    		ON SemiconductorIGBT Transistors HIGH POWER
    RoHS: Compliant    		0
      FGL60N100BNTD
      DISTI # FGL60N100BNTD      		ON SemiconductorTransistor: IGBT,1kV,42A,72W,TO264121
      • 1:$5.6500
      • 3:$4.8600
      • 10:$3.9000
      • 25:$3.3900
      FGL60N100BNTD
      DISTI # 1095037      		ON SemiconductorIGBT, NPT, TO-264
      RoHS: Compliant      		0
      • 500:£2.5300
      • 250:£2.6100
      • 100:£3.6700
      • 10:£4.7200
      • 1:£5.7700
      FGL60N100BNTD
      DISTI # XSFP00000156156      		Fairchild Semiconductor Corporation 
      RoHS: Compliant      		1125
      • 1125:$6.2400
      • 375:$6.8600
      FGL60N100BNTDTU
      DISTI # XSFP00000166970      		Fairchild Semiconductor Corporation 
      RoHS: Compliant      		9750
      • 9750:$4.8400
      • 375:$5.3200
      FGL60N100BNTD
      DISTI # 1095037      		ON SemiconductorIGBT, NPT, TO-264
      RoHS: Compliant      		0
      • 1125:$5.5600
      • 750:$6.5900
      • 375:$7.3400
      • 10:$9.4400
      • 1:$10.5000
      Immagine Parte # Descrizione
      MGJ2D051509SC

      Mfr.#: MGJ2D051509SC

      OMO.#: OMO-MGJ2D051509SC-MURATA-POWER-SOLUTIONS

      		 Isolated DC/DC Converters 2W 5Vin 15/-8.7Vout 80/40mA SIP
      Disponibilità
      Azione:
      Available
      Su ordine:
      1000
      Inserisci la quantità:
      Il prezzo attuale di FGL60N100BNTD è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
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