IXFN520N075T2

IXFN520N075T2
Mfr. #:
IXFN520N075T2
Produttore:
Littelfuse
Descrizione:
MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IXFN520N075T2 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFN520N075T2 DatasheetIXFN520N075T2 Datasheet (P4-P6)
ECAD Model:
Maggiori informazioni:
IXFN520N075T2 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
IXYS
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
Montaggio su telaio
Pacchetto/custodia:
SOT-227-4
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
75 V
Id - Corrente di scarico continua:
480 A
Rds On - Resistenza Drain-Source:
1.9 mOhms
Vgs th - Tensione di soglia gate-source:
2.5 V
Vgs - Tensione Gate-Source:
10 V
Qg - Carica cancello:
545 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 175 C
Pd - Dissipazione di potenza:
940 W
Configurazione:
Separare
Modalità canale:
Aumento
Nome depositato:
HiPerFET
Confezione:
Tubo
Serie:
IXFN520N075
Tipo di transistor:
1 N-Channel
Tipo:
TrenchT2 GigaMOS HiperFet
Marca:
IXYS
Transconduttanza diretta - Min:
65 S
Tempo di caduta:
35 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
36 ns
Quantità confezione di fabbrica:
10
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
80 ns
Tempo di ritardo di accensione tipico:
48 ns
Unità di peso:
1.058219 oz
Tags
IXFN52, IXFN5, IXFN, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 75 V 940 W 545 nC TranchT2 HiperFET Power MosFet SMT - SOT-227
***p One Stop Global
Trans MOSFET N-CH 75V 480A 4-Pin SOT-227B
***i-Key
MOSFET N-CH 75V 480A SOT227
***ukat
N-Ch 75V 480A 940W 0,0019R SOT227B
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
GigaMOS™ TrenchT2™ Power MOSFETs
IXYS GigaMOS™ TrenchT2™ standard and HiPerFET™ Power MOSFETs are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600A (Tc=@25ºC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. These new IXYS GigaMOS Power MOSFETs incorporate IXYS TrenchT2 Technology, allowing for improved channel density while achieving lower on-state resistance and gate charge to facilitate energy-efficient switching at high speeds. These IXYS GigaMOS TrenchT2 Power MOSFETs eliminate multiple paralleled lower current rated MOSFET devices and provide the ability to control more power within a smaller footprint. These devices are designed for use in a wide range of applications, including synchronous rectification, DC-DC converter, battery charger, and switch-mode and resonant-mode power supplies.
Parte # Mfg. Descrizione Azione Prezzo
IXFN520N075T2
DISTI # V36:1790_15877726
IXYS CorporationTrans MOSFET N-CH 75V 480A 4-Pin SOT-227B
RoHS: Compliant
0
    IXFN520N075T2
    DISTI # IXFN520N075T2-ND
    IXYS CorporationMOSFET N-CH 75V 480A SOT227
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    254In Stock
    • 500:$16.6980
    • 100:$19.1180
    • 30:$20.5700
    • 10:$22.3850
    • 1:$24.2000
    IXFN520N075T2
    DISTI # 747-IXFN520N075T2
    IXYS CorporationMOSFET GigaMOS Trench T2 HiperFET PWR MOSFET
    RoHS: Compliant
    389
    • 1:$24.2000
    • 5:$22.9900
    • 10:$22.3800
    • 25:$20.5700
    • 50:$19.7000
    • 100:$19.1100
    • 200:$17.5400
    IXFN520N075T2
    DISTI # IXFN520N075T2
    IXYS CorporationN-Ch 75V 480A 940W 0,0019R SOT227B
    RoHS: Compliant
    0
    • 1:€19.6500
    • 5:€16.6500
    • 10:€15.6500
    • 25:€15.0500
    IXFN520N075T2
    DISTI # XSFP00000002804
    IXYS Corporation 
    RoHS: Compliant
    20 in Stock0 on Order
    • 20:$25.4400
    • 10:$27.2600
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    Disponibilità
    Azione:
    411
    Su ordine:
    2394
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    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    24,20 USD
    24,20 USD
    5
    22,99 USD
    114,95 USD
    10
    22,38 USD
    223,80 USD
    25
    20,57 USD
    514,25 USD
    50
    19,70 USD
    985,00 USD
    100
    19,11 USD
    1 911,00 USD
    200
    17,54 USD
    3 508,00 USD
    500
    16,69 USD
    8 345,00 USD
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