2SCR514P5T100

2SCR514P5T100
Mfr. #:
2SCR514P5T100
Produttore:
Rohm Semiconductor
Descrizione:
Bipolar Transistors - BJT NPN 80V Vceo 700mA Ic MPT3
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
2SCR514P5T100 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
2SCR514P5T100 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Semiconduttore ROHM
Categoria di prodotto:
Transistor bipolari - BJT
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
SC-62-3
Polarità del transistor:
NPN
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
80 V
Collettore-tensione di base VCBO:
80 V
Emettitore-tensione di base VEBO:
6 V
Tensione di saturazione collettore-emettitore:
100 mV
Corrente massima del collettore CC:
700 mA
Guadagno larghezza di banda prodotto fT:
320 MHz
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Serie:
2SxR
Guadagno di corrente CC hFE Max:
390 at 100 mA, 3 V
Confezione:
Bobina
Marca:
Semiconduttore ROHM
Corrente continua del collettore:
700 mA
Guadagno base/collettore DC hfe min:
120
Pd - Dissipazione di potenza:
500 mW
Tipologia di prodotto:
BJT - Transistor bipolari
Quantità confezione di fabbrica:
1000
sottocategoria:
transistor
Parte # Alias:
2SCR514P5
Tags
2SCR514P, 2SCR514, 2SCR51, 2SCR5, 2SCR, 2SC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Japan
Transistor GP BJT NPN 80V 0.7A 3-Pin SOT-89 T/R
***ical
Trans GP BJT NPN 80V 0.7A 2000mW 4-Pin(3+Tab) MPT T/R
***nell
TRANS, NPN, 80V, 0.7A, 150DEG C, 2W; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 320MHz; Power Dissipation Pd: 2W; DC Collector Current: 700mA; DC Current Gain hFE: 120hFE; Transistor Case Style: SOT-89; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***et
Trans GP BJT PNP 80V 0.7A 3-Pin SOT-346T T/R
***i-Key
TRANS PNP 80V 0.7A TSMT3
***nell
TRANS, PNP, -80V, -0.7A, 150DEG C, 0.5W; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -80V; Transition Frequency ft: -; Power Dissipation Pd: 500mW; DC Collector Current: 700mA; DC Current Gain hFE: 120hFE; Transistor Case Style: SOT-346; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***et Europe
Trans GP BJT PNP 80V 0.7A 4-Pin(3+Tab) MPT T/R
***ronik
PNP TRANSISTOR 80V 0,7A MPT3 RoHSconf
***i-Key
TRANS PNP 80V 0.7A MPT3
***et
Trans GP BJT NPN 80V 0.7A 3-Pin SOT-346T T/R
***ark
Transistor, Npn, 80V, 0.7A, Sot-346T Rohs Compliant: Yes
***ment14 APAC
Transistor, NPN, 80V, 0.7A, SOT-346T; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:320MHz; Power
***nell
TRANSISTOR, NPN, 80V, 0.7A, SOT-346T; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 320MHz; Power Dissipation Pd: 500mW; DC Collector Current: 700mA; DC Current Gain hFE: 120hFE; Transistor Case Style: SOT-346T; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ure Electronics
MMBTA28 Series NPN 80 V 300 mW Darlington Transistor Surface Mount - SOT-23-3
*** Source Electronics
Trans Darlington NPN 80V 0.5A 300mW 3-Pin SOT-23 T/R / TRANS NPN DARL 80V 0.5A SOT23-3
***ment14 APAC
Transistor, DARLINGTON, NPN, SOT23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:125MHz; Power
***nell
TRANSISTOR, DARLINGTON, NPN, SOT23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 125MHz; Power Dissipation Pd: 300mW; DC Collector Current: 500mA; DC Current Gain hFE: 10000hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 1.5V; Current Ic Continuous a Max: 500mA; Gain Bandwidth ft Typ: 125MHz; Hfe Min: 10000; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Darlington
*** Source Electronics
Trans GP BJT PNP 80V 0.5A 1000mW 4-Pin(3+Tab) SOT-223 T/R / TRANS PNP 80V 0.5A SOT223
*** Electronic Components
Bipolar Transistors - BJT PNP Transistor General Purpose
***r Electronics
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon
***enic
1W 500mA 100@100mA1V 50MHz 250mV@100mA10mA PNP -55¡Í~+150¡Í@(Tj) SOT-223 Bipolar Transistors - BJT ROHS
***ark
Pnp 80V Bjt Sot223 Sngl Rohs Compliant: Yes
***ment14 APAC
Transistor, BIPOL, PNP, -80V, SOT-223-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-80V; Transition Frequency ft:50MHz; Power
***rchild Semiconductor
PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 73.
***eco
Transistor General Purpose BJT PNP 80 Volt 0.5 Amp 3-Pin SOT-23 Tape and Reel
***ure Electronics
MMBTA56 Series PNP 80 V 300 mW Small Signal Transistor Surface Mount- SOT-23-3
***roFlash
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon
2Sx Bipolar Junction Transistors
ROHM 2Sx Bipolar Junction Transistors (BJTs) are designed for use in industrial and consumer applications. These BJTs are available in both PNP and NPN polarities. The 2Sx BJT devices are housed in a variety of packages and are designed for medium power surface mount applications. The 2Sx BJTs feature a wide storage temperature (Tstg) range of -55ºC to 150ºC, and a junction temperature (TJ) of 150ºC. Typical applications include general purpose small signal amplifiers, power supplies, high-speed switching, and low-frequency amplifiers. 
Parte # Mfg. Descrizione Azione Prezzo
2SCR514P5T100
DISTI # V72:2272_18338752
ROHM Semiconductor2SCR514P5T100500
  • 75000:$0.1076
  • 30000:$0.1091
  • 15000:$0.1105
  • 6000:$0.1120
  • 3000:$0.1135
  • 1000:$0.1150
  • 500:$0.1454
  • 250:$0.1562
  • 100:$0.1644
  • 50:$0.2380
  • 25:$0.2908
  • 10:$0.3323
  • 1:$0.4180
2SCR514P5T100
DISTI # 2SCR514P5T100CT-ND
ROHM SemiconductorNPN 80V 700MA MEDIUM POWER TRANS
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
909In Stock
  • 500:$0.1775
  • 250:$0.2144
  • 100:$0.2366
  • 25:$0.3180
  • 10:$0.3480
  • 1:$0.4300
2SCR514P5T100
DISTI # 2SCR514P5T100DKR-ND
ROHM SemiconductorNPN 80V 700MA MEDIUM POWER TRANS
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
909In Stock
  • 500:$0.1775
  • 250:$0.2144
  • 100:$0.2366
  • 25:$0.3180
  • 10:$0.3480
  • 1:$0.4300
2SCR514P5T100
DISTI # 2SCR514P5T100TR-ND
ROHM SemiconductorNPN 80V 700MA MEDIUM POWER TRANS
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 25000:$0.1005
  • 10000:$0.1041
  • 5000:$0.1113
  • 2000:$0.1185
  • 1000:$0.1292
2SCR514P5T100
DISTI # 30614080
ROHM Semiconductor2SCR514P5T100905
  • 500:$0.2218
  • 200:$0.2767
  • 100:$0.3022
  • 59:$0.3251
2SCR514P5T100
DISTI # 26095623
ROHM Semiconductor2SCR514P5T100500
  • 75000:$0.1076
  • 30000:$0.1091
  • 15000:$0.1105
  • 6000:$0.1120
  • 3000:$0.1135
  • 1000:$0.1150
  • 500:$0.1454
  • 250:$0.1562
  • 100:$0.1644
  • 62:$0.2380
2SCR514P5T100
DISTI # 2SCR514P5T100
ROHM SemiconductorNPN 80V 700mA Medium Power Transistor, MPT3, SOT-89 - Tape and Reel (Alt: 2SCR514P5T100)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
    2SCR514P5T100
    DISTI # 78AC6846
    ROHM SemiconductorTRANS, NPN, 80V, 0.7A, 150DEG C, 2W,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:80V,Transition Frequency ft:320MHz,Power Dissipation Pd:2W,DC Collector Current:700mA,DC Current Gain hFE:120hFE,Transistor Case RoHS Compliant: Yes995
    • 100:$0.1750
    • 50:$0.2240
    • 25:$0.2720
    • 10:$0.3210
    • 1:$0.4240
    2SCR514P5T100
    DISTI # 755-2SCR514P5T100
    ROHM SemiconductorBipolar Transistors - BJT NPN 80V Vceo 700mA Ic MPT3
    RoHS: Compliant
    665
    • 1:$0.4200
    • 10:$0.3180
    • 100:$0.1730
    • 1000:$0.1300
    • 2000:$0.1120
    • 10000:$0.1050
    • 25000:$0.0960
    • 50000:$0.0920
    2SCR514P5T100ROHM Semiconductor 82
    • 43:$0.3600
    • 9:$0.4800
    • 1:$0.6000
    2SCR514P5T100
    DISTI # 1288832
    ROHM SemiconductorPOWER TRANSISTOR NPN 80V 700MA MPT3, PK400
    • 5000:£0.1080
    • 2500:£0.1110
    • 500:£0.1190
    • 250:£0.1440
    • 50:£0.1600
    2SCR514P5T100
    DISTI # 2914032
    ROHM SemiconductorTRANS, NPN, 80V, 0.7A, 150DEG C, 2W
    RoHS: Compliant
    995
    • 1000:$0.1660
    • 500:$0.1750
    • 250:$0.2020
    • 100:$0.2400
    • 25:$0.2940
    • 5:$0.3370
    2SCR514P5T100
    DISTI # 2914032
    ROHM SemiconductorTRANS, NPN, 80V, 0.7A, 150DEG C, 2W995
    • 500:£0.1040
    • 250:£0.1260
    • 100:£0.1280
    • 25:£0.2550
    • 5:£0.2660
    2SCR514P5T100
    DISTI # C1S625901677151
    ROHM SemiconductorGP BJT3905
    • 2000:$0.1520
    • 1000:$0.1640
    • 500:$0.1740
    • 200:$0.1980
    • 100:$0.2160
    • 50:$0.2330
    • 25:$0.3110
    2SCR514P5T100ROHM Semiconductor 100
    • 1:¥2.3794
    • 100:¥1.3491
    • 500:¥0.8553
    • 1000:¥0.6372
    2SCR514P5T100ROHM SemiconductorBipolar Transistors - BJT NPN 80V Vceo 700mA Ic MPT3
    RoHS: Compliant
    Americas -
      2SCR514P5T100ROHM SemiconductorRoHS(ship within 1day)103
      • 1:$0.5900
      • 10:$0.4400
      • 50:$0.2800
      • 100:$0.2100
      • 500:$0.1300
      • 1000:$0.1200
      Immagine Parte # Descrizione
      T2535-800G-TR

      Mfr.#: T2535-800G-TR

      OMO.#: OMO-T2535-800G-TR

      Triacs 25A BTA UL1557 Cert 4/3 Quadrant Triac
      MDB8S

      Mfr.#: MDB8S

      OMO.#: OMO-MDB8S

      Bridge Rectifiers 1A Bridge Rectifier
      S-123T

      Mfr.#: S-123T

      OMO.#: OMO-S-123T

      Current Regulator Diodes 50V 12mA
      MURB1660CTT4G

      Mfr.#: MURB1660CTT4G

      OMO.#: OMO-MURB1660CTT4G

      Rectifiers 600V 16A Ultrafast
      TL431BIDBZR

      Mfr.#: TL431BIDBZR

      OMO.#: OMO-TL431BIDBZR

      Voltage References Adjustable Precision Shunt Regulator
      B32922H3104M

      Mfr.#: B32922H3104M

      OMO.#: OMO-B32922H3104M

      Safety Capacitors 0.1uF 305Vac X2 LS=15mm AEC-Q200
      ACM2520-102-2P-T002

      Mfr.#: ACM2520-102-2P-T002

      OMO.#: OMO-ACM2520-102-2P-T002

      Common Mode Chokes / Filters 1000ohms 0.9ohms 0.2A
      T2535-800G-TR

      Mfr.#: T2535-800G-TR

      OMO.#: OMO-T2535-800G-TR-STMICROELECTRONICS

      Triacs 25A BTA UL1557 Cert 4/3 Quadrant Triac
      CGA7K1X7R3D471K130KA

      Mfr.#: CGA7K1X7R3D471K130KA

      OMO.#: OMO-CGA7K1X7R3D471K130KA-TDK

      Multilayer Ceramic Capacitors MLCC - SMD/SMT 470pF 2000volts X7R 10%
      ACM2520-102-2P-T002

      Mfr.#: ACM2520-102-2P-T002

      OMO.#: OMO-ACM2520-102-2P-T002-TDK

      Common Mode Filters / Chokes 1000ohms 0.9ohms 0.2A
      Disponibilità
      Azione:
      Available
      Su ordine:
      1986
      Inserisci la quantità:
      Il prezzo attuale di 2SCR514P5T100 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
      Prezzo di riferimento (USD)
      Quantità
      Prezzo unitario
      est. Prezzo
      1
      0,42 USD
      0,42 USD
      10
      0,32 USD
      3,18 USD
      100
      0,17 USD
      17,30 USD
      A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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