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BFR 183 E6327

BFR 183 E6327
Mfr. #:
BFR 183 E6327
Produttore:
Infineon Technologies
Descrizione:
RF Bipolar Transistors NPN RF Transistor 12V 65mA 450mW
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
BFR 183 E6327 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
BFR 183 E6327 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
Transistor bipolari RF
RoHS:
Y
Serie:
BFR183
Tipo di transistor:
Bipolare
Tecnologia:
si
Polarità del transistor:
NPN
Tensione collettore-emettitore VCEO Max:
12 V
Emettitore-tensione di base VEBO:
2 V
Temperatura di esercizio minima:
- 65 C
Temperatura massima di esercizio:
+ 150 C
Configurazione:
Separare
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
SOT-23
Confezione:
Bobina
Collettore-tensione di base VCBO:
20 V
Guadagno di corrente CC hFE Max:
70 at 15 mA at 8 V
Altezza:
1 mm
Lunghezza:
2.9 mm
Frequenza operativa:
8000 MHz
Tipo:
Segnale bipolare RF di piccole dimensioni
Larghezza:
1.3 mm
Marca:
Tecnologie Infineon
Corrente massima del collettore CC:
0.065 A
Pd - Dissipazione di potenza:
450 mW
Tipologia di prodotto:
Transistor bipolari RF
Quantità confezione di fabbrica:
3000
sottocategoria:
transistor
Parte # Alias:
BFR183E6327HTSA1 BFR183E6327XT SP000011054
Unità di peso:
0.000282 oz
Tags
BFR183E, BFR183, BFR18, BFR1, BFR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
RF Transistors
Infineon RF Transistors include Low Noise Amplifiers and High Linearity Transistors. Devices in the Low Noise category are based on silicon bipolar technology. Moderate transition frequency of fT <20 GHz provides ease of use and stability. Breakdown voltage can safely support supply voltage of 5V. These transistors are suitable for use with AM over VHF/UHF up to 14 GHz. High Linearity Transistors provide OIP3 (Output 3rd Order Intercept Point) above 29 dBm. They are based on Infineon's high volume silicon bipolar and SiGe:C technologies for best in class noise figures. These devices are ideal for drivers, pre-amplifiers, and buffer amplifiers.
Parte # Mfg. Descrizione Azione Prezzo
BFR183E6327HTSA1
DISTI # BFR183E6327HTSA1CT-ND		Infineon Technologies AGRF TRANS NPN 12V 8GHZ SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		11781In Stock
  • 1000:$0.1094
  • 500:$0.1394
  • 100:$0.1993
  • 10:$0.3140
  • 1:$0.4100
BFR183E6327HTSA1
DISTI # BFR183E6327HTSA1DKR-ND		Infineon Technologies AGRF TRANS NPN 12V 8GHZ SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		11781In Stock
  • 1000:$0.1094
  • 500:$0.1394
  • 100:$0.1993
  • 10:$0.3140
  • 1:$0.4100
BFR183E6327HTSA1
DISTI # BFR183E6327HTSA1TR-ND		Infineon Technologies AGRF TRANS NPN 12V 8GHZ SOT23-3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		9000In Stock
  • 150000:$0.0698
  • 75000:$0.0723
  • 30000:$0.0795
  • 15000:$0.0844
  • 6000:$0.0917
  • 3000:$0.0965
BFR 183 E6327
DISTI # BFR 183 E6327		Infineon Technologies AGTrans GP BJT NPN 12V 0.065A 3-Pin SOT-23 T/R (Alt: BFR 183 E6327)
RoHS: Compliant
Min Qty: 9000
Container: Tape and Reel		Asia - 0
  • 9000:$0.0693
  • 18000:$0.0674
  • 27000:$0.0655
  • 45000:$0.0638
  • 90000:$0.0630
  • 225000:$0.0622
  • 450000:$0.0614
BFR 183 E6327
DISTI # SP000011054		Infineon Technologies AGTrans GP BJT NPN 12V 0.065A 3-Pin SOT-23 T/R (Alt: SP000011054)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 3000:€0.1219
  • 6000:€0.0949
  • 12000:€0.0779
  • 18000:€0.0659
  • 30000:€0.0609
BFR 183 E6327
DISTI # SP000011054		Infineon Technologies AGTrans GP BJT NPN 12V 0.065A 3-Pin SOT-23 T/R (Alt: SP000011054)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 3000:€0.1139
  • 6000:€0.0979
  • 12000:€0.0829
  • 18000:€0.0709
  • 30000:€0.0679
BFR183E6327HTSA1
DISTI # BFR183E6327HTSA1		Infineon Technologies AGTrans GP BJT NPN 12V 0.065A 3-Pin SOT-23 T/R - Tape and Reel (Alt: BFR183E6327HTSA1)
RoHS: Compliant
Min Qty: 9000
Container: Reel		Americas - 0
  • 9000:$0.0689
  • 15000:$0.0669
  • 24000:$0.0639
  • 45000:$0.0619
  • 90000:$0.0609
BFR183E6327HTSA1
DISTI # 97Y1218		Infineon Technologies AGTRANSISTOR, RF, AEC-Q101, NPN, SOT-23-3,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:12V,Transition Frequency ft:8GHz,Power Dissipation Pd:450mW,DC Collector Current:65mA,DC Current Gain hFE:100hFE,RF Transistor RoHS Compliant: Yes723
  • 1000:$0.0970
  • 500:$0.1070
  • 250:$0.1170
  • 100:$0.1270
  • 50:$0.1760
  • 25:$0.2260
  • 10:$0.2750
  • 1:$0.4000
BFR 183 E6327
DISTI # 726-BFR183E6327		Infineon Technologies AGRF Bipolar Transistors NPN RF Transistor 12V 65mA 450mW
RoHS: Compliant		8157
  • 1:$0.3900
  • 10:$0.2750
  • 100:$0.1270
  • 1000:$0.0970
  • 3000:$0.0830
  • 9000:$0.0760
  • 24000:$0.0710
BFR183E6327HTSA1
DISTI # 726-BFR183E6327HTSA1		Infineon Technologies AGRF Bipolar Transistors NPN RF Transistor 12V 65mA 450mW
RoHS: Compliant		8680
  • 1:$0.3900
  • 10:$0.2750
  • 100:$0.1270
  • 1000:$0.0970
  • 3000:$0.0830
  • 9000:$0.0760
  • 24000:$0.0710
BFR183E6327Infineon Technologies AGRF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
RoHS: Compliant		37800
  • 100:$0.0700
  • 500:$0.0700
  • 1000:$0.0700
  • 1:$0.0800
  • 25:$0.0800
BFR183E6327HTSA1Infineon Technologies AGRF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
RoHS: Compliant		9000
  • 500:$0.0800
  • 1000:$0.0800
  • 25:$0.0900
  • 100:$0.0900
  • 1:$0.1000
BFR183E6327HTSA1
DISTI # 8922245P		Infineon Technologies AGRF TRANSISTOR BJT NPN 12V 0.065A SOT23, RL300
  • 6250:£0.0620
  • 2500:£0.0690
  • 1250:£0.0750
  • 250:£0.0970
BFR183E6327Infineon Technologies AG 11896
    BFR183E6327Infineon Technologies AG 7455
      BFR183E6327Infineon Technologies AG12V,65mA,Bipolar RF NPN Transistor7200
      • 1:$0.1200
      • 100:$0.1000
      • 500:$0.0900
      • 1000:$0.0900
      BFR183E6327HTSA1
      DISTI # 2617468      		Infineon Technologies AGTRANSISTOR, RF, AEC-Q101, NPN, SOT-23-3
      RoHS: Compliant      		723
      • 3000:$0.1320
      • 1000:$0.1540
      • 100:$0.2010
      • 10:$0.4350
      • 1:$0.6340
      BFR183E6327HTSA1
      DISTI # 2617468      		Infineon Technologies AGTRANSISTOR, RF, AEC-Q101, NPN, SOT-23-3
      RoHS: Compliant      		748
      • 500:£0.0811
      • 250:£0.0979
      • 100:£0.1030
      • 25:£0.2330
      • 5:£0.2420
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      		 Nuovo e originale
      Disponibilità
      Azione:
      Available
      Su ordine:
      1991
      Inserisci la quantità:
      Il prezzo attuale di BFR 183 E6327 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
      Prezzo di riferimento (USD)
      Quantità
      Prezzo unitario
      est. Prezzo
      1
      0,39 USD
      0,39 USD
      10
      0,28 USD
      2,75 USD
      100
      0,13 USD
      12,70 USD
      1000
      0,10 USD
      97,00 USD
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