BSB028N06NN3 G

Mfr. #:: BSB028N06NN3 G
Produttore:: Infineon Technologies
Descrizione:: MOSFET N-Ch 60V 90A CanPAK3 MN OptiMOS 3
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: BSB028N06NN3 G Scheda dati
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Attributo del prodotto
Valore attributo

Produttore: Tecnologie Infineon

categoria di prodotto: Transistor - FET, MOSFET - Singoli

Serie: OptiMOS 3

Confezione: Bobina

Alias parziali: BSB028N06NN3GXT BSB028N06NN3GXUMA1 SP000605956

Stile di montaggio: SMD/SMT

Nome depositato: OptiMOS

Pacchetto-Custodia: WDSON-2

Tecnologia: si

Numero di canali: 1 Channel

Configurazione: Single Quad Drain Dual Source

Tipo a transistor: 1 N-Channel

Pd-Power-Dissipazione: 78 W

Massima temperatura di esercizio: + 150 C

Temperatura di esercizio minima: - 40 C

Tempo di caduta: 6 ns

Ora di alzarsi: 9 ns

Vgs-Gate-Source-Voltage: 20 V

Id-Continuo-Scarico-Corrente: 90 A

Vds-Drain-Source-Breakdown-Voltage: 60 V

Rds-On-Drain-Source-Resistenza: 2.8 mOhms

Polarità del transistor: Canale N

Tempo di ritardo allo spegnimento tipico: 38 ns

Tempo di ritardo all'accensione tipico: 21 ns

Qg-Gate-Carica: 108 nC

Tags: BSB028N06NN3G, BSB028, BSB02, BSB0, BSB

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSB028N06NN3 G Maggiori informazioni

BSB OptiMOS Power MOSFETs: Infineon Technologies BSB OptiMOS™ Power MOSFETs offer highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages make OptiMOS™ 30 V or 60V the best choice for the demanding requirements of switched mode power supplies in servers, datacom and telecom applications.-BSB OptiMOS Power MOSFETs 30V feature super fast switching control FETs together with low EMI sync FETs to provide solutions that are easy to design in. BSB OptiMOS™ Power MOSFETs are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space- efficiency and cost. BSB OptiMOS™ Power MOSFETs products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.-With almost no parasitic package inductances, BSB OptiMOS Power MOSFETs 60V allow best controllability of the gate in highly dynamic switching environments. In addition, BSB OptiMOS Power MOSFETs 60V feature best cooling capability through top-side cooling of the metal can. This packaging technology combined with the OptiMOS silicon enables highest efficiency levels while having minimal space requirements at the same time.Learn More

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
BSB028N06NN3GXUMA1 DISTI # V72:2272_06382902	Infineon Technologies AG	Trans MOSFET N-CH Si 60V 22A 7-Pin WDSON T/R RoHS: Compliant	5000	75000:$0.8675 30000:$0.8680 15000:$0.8688 6000:$0.8802 3000:$0.8890 1000:$0.8951 500:$0.9284 250:$1.0326 100:$1.1238 50:$1.1956 25:$1.3613 10:$1.3976 1:$1.5758
BSB028N06NN3GXUMA1 DISTI # BSB028N06NN3GXUMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 60V 22A WDSON-2 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	5000In Stock	5000:$1.0725
BSB028N06NN3GXUMA1 DISTI # BSB028N06NN3GXUMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 60V 22A WDSON-2 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	5000In Stock	1000:$1.2321 500:$1.4871 100:$1.9119 10:$2.3790 1:$2.6300
BSB028N06NN3GXUMA1 DISTI # BSB028N06NN3GXUMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 60V 22A WDSON-2 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	5000In Stock	1000:$1.2321 500:$1.4871 100:$1.9119 10:$2.3790 1:$2.6300
BSB028N06NN3GXUMA1 DISTI # 31314389	Infineon Technologies AG	Trans MOSFET N-CH Si 60V 22A 7-Pin WDSON T/R RoHS: Compliant	5000	3000:$0.9037 1000:$0.9052 500:$0.9343 250:$1.0383 100:$1.1308 50:$1.2022 25:$1.3677 10:$1.4045 9:$1.5826
BSB028N06NN3G DISTI # BSB028N06NN3GXUMA1	Infineon Technologies AG	Trans MOSFET N-CH 60V 22A 7-Pin WDSON T/R - Tape and Reel (Alt: BSB028N06NN3GXUMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	5000:$0.8639 10000:$0.8329 20000:$0.8029 30000:$0.7759 50000:$0.7619
BSB028N06NN3 G DISTI # 726-BSB028N06NN3G	Infineon Technologies AG	MOSFET N-Ch 60V 90A CanPAK3 MN OptiMOS 3 RoHS: Compliant	5080	1:$2.2100 10:$1.8800 100:$1.5000 500:$1.3200 1000:$1.0900 2500:$1.0200 5000:$0.9760
BSB028N06NN3GXUMA1 DISTI # 9064306P	Infineon Technologies AG	MOSFET N-CHANNEL 60V 22A OPTIMOS WDSON7, RL	5000	50:£1.2740 100:£1.0200
BSB028N06NN3GXUMA1 DISTI # 2443367	Infineon Technologies AG	MOSFET, N CH, 60V, 90A, WDSON-3 RoHS: Compliant	4981	5:£1.5300 25:£1.2700 100:£1.0200 250:£1.0100 500:£0.9960
BSB028N06NN3GXUMA1 DISTI # 2443367	Infineon Technologies AG	MOSFET, N CH, 60V, 90A, WDSON-3 RoHS: Compliant	4981	1:$3.5000 10:$2.9800 100:$2.3800 500:$2.0900 1000:$1.7300 2500:$1.6200 5000:$1.5500
BSB028N06NN3GXUMA1 DISTI # 2443367RL	Infineon Technologies AG	MOSFET, N CH, 60V, 90A, WDSON-3 RoHS: Compliant	0	1:$3.5000 10:$2.9800 100:$2.3800 500:$2.0900 1000:$1.7300 2500:$1.6200 5000:$1.5500

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: BSB028N06NN3 G OMO.#: OMO-BSB028N06NN3-G	MOSFET N-Ch 60V 90A CanPAK3 MN OptiMOS 3
	Mfr.#: BSB028N06NN3 OMO.#: OMO-BSB028N06NN3-1190	Nuovo e originale
	Mfr.#: BSB028N06NN3 G OMO.#: OMO-BSB028N06NN3-G-1190	MOSFET N-Ch 60V 90A CanPAK3 MN OptiMOS 3
	Mfr.#: BSB028N06NN3G OMO.#: OMO-BSB028N06NN3G-1190	Trans MOSFET N-CH 60V 22A 7-Pin WDSON T/R - Tape and Reel (Alt: BSB028N06NN3GXUMA1)
	Mfr.#: BSB028N06NN3GXUMA1 OMO.#: OMO-BSB028N06NN3GXUMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 60V 22A WDSON-2

Disponibilità

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Quantità
Prezzo unitario
est. Prezzo

1: ~~1,35 USD~~; ~~1,35 USD~~

10: ~~1,28 USD~~; ~~12,84 USD~~

100: ~~1,22 USD~~; ~~121,64 USD~~

500: ~~1,15 USD~~; ~~574,40 USD~~

1000: ~~1,08 USD~~; ~~1 081,20 USD~~

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BSB028N06NN3 G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes