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IPA80R600P7XKSA1

IPA80R600P7XKSA1
Mfr. #:
IPA80R600P7XKSA1
Produttore:
Infineon Technologies
Descrizione:
MOSFET
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IPA80R600P7XKSA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
Foro passante
Pacchetto/custodia:
PG-TO-220FP-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
800 V
Id - Corrente di scarico continua:
8 A
Rds On - Resistenza Drain-Source:
510 mOhms
Vgs th - Tensione di soglia gate-source:
2.5 V
Vgs - Tensione Gate-Source:
20 V
Qg - Carica cancello:
20 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
28 W
Configurazione:
Separare
Modalità canale:
Aumento
Nome depositato:
CoolMOS
Confezione:
Tubo
Serie:
CoolMOS P7
Tipo di transistor:
1 N-Channel
Marca:
Tecnologie Infineon
Tempo di caduta:
10 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
8 ns
Quantità confezione di fabbrica:
500
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
40 ns
Tempo di ritardo di accensione tipico:
8 ns
Parte # Alias:
IPA80R600P7 SP001644604
Unità di peso:
0.078248 oz
Tags
IPA80R60, IPA80R6, IPA8, IPA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 800 V 600 mOhm 20 nC CoolMOS™ Power Mosfet - TO-220-3FP
***i-Key
MOSFET N-CHANNEL 800V 8A TO220
***ronik
N-CH 800V 8A 600mOhm TO-220FP
***et Europe
LOW POWER_NEW
***ark
Mosfet, N-Ch, 800V, 8A, To-220Fp; Transistor Polarity:n Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:800V; On Resistance Rds(On):0.51Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 800V, 8A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.51ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:28W; Transistor Case Style:TO-220FP; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P7 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CA-N, 800V, 8A, TO-220FP; Polarità Transistor:Canale N; Corrente Continua di Drain Id:8A; Tensione Drain Source Vds:800V; Resistenza di Attivazione Rds(on):0.51ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:28W; Modello Case Transistor:TO-220FP; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
800V CoolMOS TM P7 series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. | Summary of Features: Best-in-class FOM R DS(on) * E oss; reduced Q g, C iss and C oss; Best-in-class DPAK R DS(on) of 280m; Best-in-class V (GS)th of 3V and smallest V (GS)th variation of 0.5V; Integrated Zener diode ESD protection up to Class 2 (HBM); Best-in-class quality and reliability; Fully optimized portfolio | Benefits: 0.1% to 0.6% efficiency gain and 2C to 8C lower MOSFET temperature as compared to CoolMOS C3; Enabling higher power density designs, BOM savings and lower assembly cost; Easy to drive and to design-in; Better production yield by reducing ESD related failures; Less production issues and reduced field returns; Easy to select right parts for fine tuning of designs | Target Applications: Adapter; LED; Audio; Industrial SMPS; AUX power
Parte # Mfg. Descrizione Azione Prezzo
IPA80R600P7XKSA1
DISTI # V36:1790_18205976		Infineon Technologies AG800V CoolMOS P7 Power Transistor0
    IPA80R600P7XKSA1
    DISTI # IPA80R600P7XKSA1-ND    		Infineon Technologies AGMOSFET N-CHANNEL 800V 8A TO220
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		On Order
    • 5000:$0.7708
    • 2500:$0.7805
    • 500:$1.0117
    • 100:$1.2314
    • 25:$1.4452
    • 10:$1.5320
    • 1:$1.7100
    IPA80R600P7XKSA1
    DISTI # IPA80R600P7XKSA1    		Infineon Technologies AGLOW POWER_NEW - Rail/Tube (Alt: IPA80R600P7XKSA1)
    RoHS: Compliant
    Min Qty: 500
    Container: Tube    		Americas - 0
    • 5000:$0.6989
    • 3000:$0.7119
    • 2000:$0.7369
    • 1000:$0.7639
    • 500:$0.7929
    IPA80R600P7XKSA1
    DISTI # 726-IPA80R600P7XKSA1    		Infineon Technologies AGMOSFET
    RoHS: Compliant    		0
    • 1:$1.6200
    • 10:$1.3700
    • 100:$1.1000
    • 500:$0.9640
    • 1000:$0.7990
    IPA80R600P7XKSA1
    DISTI # 2771314    		Infineon Technologies AGMOSFET, N-CH, 800V, 8A, TO-220FP
    RoHS: Compliant    		38
    • 100:$2.0900
    • 10:$2.6000
    • 1:$2.8700
    IPA80R600P7XKSA1
    DISTI # 2771314    		Infineon Technologies AGMOSFET, N-CH, 800V, 8A, TO-220FP42
    • 100:£1.0500
    • 10:£1.3800
    • 1:£1.7500
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    Disponibilità
    Azione:
    950
    Su ordine:
    2933
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