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SIR166DP-T1-GE3

SIR166DP-T1-GE3
Mfr. #:
SIR166DP-T1-GE3
Produttore:
Vishay
Descrizione:
Darlington Transistors MOSFET 30V 40A N-CH MOSFET
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SIR166DP-T1-GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore
VISHAY
categoria di prodotto
FET - Single
Serie
SIRxxxDP
Confezione
Bobina
Alias ​​parziali
SIR166DP-GE3
Unità di peso
0.017870 oz
Stile di montaggio
SMD/SMT
Pacchetto-Custodia
SO-8
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Separare
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
48 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Vgs-Gate-Source-Voltage
+/- 20 V
Id-Continuo-Scarico-Corrente
40 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Vgs-th-Gate-Sorgente-Soglia-Tensione
1.2 V to 2.2 V
Rds-On-Drain-Source-Resistenza
2.6 mOhms
Polarità del transistor
Canale N
Qg-Gate-Carica
51 nC
Transconduttanza diretta-Min
75 S
Tags
SIR166DP, SIR166, SIR16, SIR1, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
SiR166DP Series N-Channel 30 V 0.0040 Ohm 48 W SMT Mosfet - PowerPAK® SO-8
***ical
Trans MOSFET N-CH 30V 29.5A 8-Pin PowerPAK SO EP T/R
***ment14 APAC
MOSFET,N CH,DIODE,30V,40A,PPAKSO8; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2600µohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:29.5A; Power Dissipation Pd:5W; Voltage Vgs Max:20V
Parte # Mfg. Descrizione Azione Prezzo
SIR166DP-T1-GE3
DISTI # SIR166DP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 30V 40A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		164In Stock
  • 1000:$0.7342
  • 500:$0.9300
  • 100:$1.1992
  • 10:$1.5170
  • 1:$1.7100
SIR166DP-T1-GE3
DISTI # SIR166DP-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 30V 40A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		164In Stock
  • 1000:$0.7342
  • 500:$0.9300
  • 100:$1.1992
  • 10:$1.5170
  • 1:$1.7100
SIR166DP-T1-GE3
DISTI # SIR166DP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 30V 40A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 3000:$0.6653
SIR166DP-T1-GE3
DISTI # SIR166DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 29.5A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR166DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.6279
  • 6000:$0.6099
  • 12000:$0.5849
  • 18000:$0.5689
  • 30000:$0.5529
SIR166DP-T1-GE3
DISTI # SIR166DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 29.5A 8-Pin PowerPAK SO T/R (Alt: SIR166DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 3000:€1.2499
  • 6000:€0.8959
  • 12000:€0.7269
  • 18000:€0.6429
  • 30000:€0.6149
SIR166DP-T1-GE3
DISTI # 86R3802		Vishay IntertechnologiesN-CHANNEL 30-V (D-S) MOSFET0
  • 1:$0.6400
  • 3000:$0.6350
  • 6000:$0.6050
  • 12000:$0.5360
SIR166DP-T1-GE3
DISTI # 781-SIR166DP-T1-GE3		Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAK SO-8
RoHS: Compliant		2438
  • 1:$1.5200
  • 10:$1.2500
  • 100:$0.9550
  • 500:$0.8210
  • 1000:$0.7780
SIR166DP-T1-GE3Vishay IntertechnologiesINSTOCK2585
    SIR166DP-T1-GE3Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAK SO-8
    RoHS: Compliant    		Americas -
    • 3000:$0.6050
    • 6000:$0.5720
    • 12000:$0.5540
    • 24000:$0.5460
    SIR166DP-T1-GE3
    DISTI # 1858992    		Vishay IntertechnologiesMOSFET,N CH,DIODE,30V,40A,PPAKSO8
    RoHS: Compliant    		0
    • 1:$2.4100
    • 10:$1.9800
    • 100:$1.5200
    • 500:$1.3100
    • 1000:$1.1500
    • 3000:$1.1500
    Immagine Parte # Descrizione
    SIR166DP-T1-GE3

    Mfr.#: SIR166DP-T1-GE3

    OMO.#: OMO-SIR166DP-T1-GE3

    		 MOSFET 30V Vds 20V Vgs PowerPAK SO-8
    SIR166DP-T1-GE3

    Mfr.#: SIR166DP-T1-GE3

    OMO.#: OMO-SIR166DP-T1-GE3-VISHAY

    		 Darlington Transistors MOSFET 30V 40A N-CH MOSFET
    SIR166DP

    Mfr.#: SIR166DP

    OMO.#: OMO-SIR166DP-1190

    		 Nuovo e originale
    SIR166DP-T1-E3

    Mfr.#: SIR166DP-T1-E3

    OMO.#: OMO-SIR166DP-T1-E3-1190

    		 Nuovo e originale
    SIR166DY

    Mfr.#: SIR166DY

    OMO.#: OMO-SIR166DY-1190

    		 Nuovo e originale
    Disponibilità
    Azione:
    Available
    Su ordine:
    5500
    Inserisci la quantità:
    Il prezzo attuale di SIR166DP-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    0,81 USD
    0,81 USD
    10
    0,77 USD
    7,69 USD
    100
    0,73 USD
    72,90 USD
    500
    0,69 USD
    344,25 USD
    1000
    0,65 USD
    648,00 USD
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