MTB3N60E

MTB3N60E
Mfr. #:
MTB3N60E
Produttore:
Rochester Electronics, LLC
Descrizione:
Power Field-Effect Transistor, 3A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
MTB3N60E Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Tags
MTB3N6, MTB3N, MTB3, MTB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Parte # Mfg. Descrizione Azione Prezzo
MTB3N60EON SemiconductorPower Field-Effect Transistor, 3A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Not Compliant
550
  • 1000:$0.4700
  • 500:$0.5000
  • 100:$0.5200
  • 25:$0.5400
  • 1:$0.5800
MTB3N60ET4ON SemiconductorPower Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
RoHS: Not Compliant
700
  • 1000:$0.8600
  • 500:$0.9000
  • 100:$0.9400
  • 25:$0.9800
  • 1:$1.0500
Immagine Parte # Descrizione
MTB301MS

Mfr.#: MTB301MS

OMO.#: OMO-MTB301MS-1190

Nuovo e originale
MTB30N06V

Mfr.#: MTB30N06V

OMO.#: OMO-MTB30N06V-1190

Nuovo e originale
MTB30N06VLT4

Mfr.#: MTB30N06VLT4

OMO.#: OMO-MTB30N06VLT4-1190

POWER FIELD-EFFECT TRANSISTOR, 30A I(D), 60V, 0.05OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
MTB30P06V

Mfr.#: MTB30P06V

OMO.#: OMO-MTB30P06V-1190

Power Field-Effect Transistor, 30A I(D), 60V, 0.08ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
MTB33N10ET4

Mfr.#: MTB33N10ET4

OMO.#: OMO-MTB33N10ET4-1190

33 A, 100 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET
MTB33N10ET4G

Mfr.#: MTB33N10ET4G

OMO.#: OMO-MTB33N10ET4G-1190

Nuovo e originale
MTB36N06

Mfr.#: MTB36N06

OMO.#: OMO-MTB36N06-1190

Nuovo e originale
MTB3D0N03BE3

Mfr.#: MTB3D0N03BE3

OMO.#: OMO-MTB3D0N03BE3-1190

Nuovo e originale
MTB3N100E T3N100E

Mfr.#: MTB3N100E T3N100E

OMO.#: OMO-MTB3N100E-T3N100E-1190

Nuovo e originale
MTB3N60ET4

Mfr.#: MTB3N60ET4

OMO.#: OMO-MTB3N60ET4-1190

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Disponibilità
Azione:
Available
Su ordine:
1000
Inserisci la quantità:
Il prezzo attuale di MTB3N60E è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
0,70 USD
0,70 USD
10
0,67 USD
6,70 USD
100
0,63 USD
63,45 USD
500
0,60 USD
299,65 USD
1000
0,56 USD
564,00 USD
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