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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| BSC205N10LS G DISTI # BSC205N10LSGTR-ND | Infineon Technologies AG | MOSFET N-CH 100V 45A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| BSC205N10LS G DISTI # BSC205N10LSGCT-ND | Infineon Technologies AG | MOSFET N-CH 100V 45A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| BSC205N10LS G DISTI # BSC205N10LSGDKR-ND | Infineon Technologies AG | MOSFET N-CH 100V 45A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| BSC205N10LS G DISTI # BSC205N10LSG | Infineon Technologies AG | Trans MOSFET N-CH 100V 7.4A 8-Pin TDSON - Bulk (Alt: BSC205N10LSG) RoHS: Compliant Min Qty: 736 Container: Bulk | Americas - 0 |
|
| BSC205N10LS G DISTI # BSC205N10LS G | Infineon Technologies AG | Trans MOSFET N-CH 100V 7.4A 8-Pin TDSON - Bulk (Alt: BSC205N10LS G) RoHS: Compliant Min Qty: 736 Container: Bulk | Americas - 0 |
|
| BSC205N10LSGATMA1 DISTI # BSC205N10LSGATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 100V 7.4A 8-Pin TDSON EP T/R - Bulk (Alt: BSC205N10LSGATMA1) RoHS: Compliant Min Qty: 642 Container: Bulk | Americas - 0 |
|
| BSC205N10LS G DISTI # 726-BSC205N10LSG | Infineon Technologies AG | MOSFET N-Ch 100V 7.4A TDSON-8 RoHS: Compliant | 0 | |
| BSC205N10LSGATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 7.4A I(D), 100V, 0.0205ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant | 10000 |
|
| BSC205N10LSG | Infineon Technologies AG | Power Field-Effect Transistor, 7.4A I(D), 100V, 0.0205ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 6751 |
|
| BSC205N10LS G | Infineon Technologies AG | Power Field-Effect Transistor, 7.4A I(D), 100V, 0.0205ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant | 10000 |
|
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: 205N10LS OMO.#: OMO-205N10LS-1190 |
Nuovo e originale |
|
|
Mfr.#: 205NL6327 OMO.#: OMO-205NL6327-1190 |
Nuovo e originale |