BSC200P03LSG

BSC200P03LSG
Mfr. #:
BSC200P03LSG
Produttore:
Rochester Electronics, LLC
Descrizione:
Power Field-Effect Transistor, 9.9A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
BSC200P03LSG Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Tags
BSC200P03LSG, BSC200P, BSC200, BSC20, BSC2, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Parte # Mfg. Descrizione Azione Prezzo
BSC200P03LSGAUMA1
DISTI # BSC200P03LSGAUMA1TR-ND
Infineon Technologies AGMOSFET P-CH 30V 12.5A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
Limited Supply - Call
    BSC200P03LSGAUMA1
    DISTI # BSC200P03LSGAUMA1CT-ND
    Infineon Technologies AGMOSFET P-CH 30V 12.5A TDSON-8
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      BSC200P03LSGAUMA1
      DISTI # BSC200P03LSGAUMA1DKR-ND
      Infineon Technologies AGMOSFET P-CH 30V 12.5A TDSON-8
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        BSC200P03LS G
        DISTI # 726-BSC200P03LSG
        Infineon Technologies AGMOSFET P-Ch -30V -12.5A TDSON-8 OptiMOS P
        RoHS: Compliant
        0
          BSC200P03LSGInfineon Technologies AGPower Field-Effect Transistor, 9.9A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
          RoHS: Compliant
          15677
          • 1000:$0.4000
          • 500:$0.4200
          • 100:$0.4300
          • 25:$0.4500
          • 1:$0.4900
          Immagine Parte # Descrizione
          BSC200N15NS3G

          Mfr.#: BSC200N15NS3G

          OMO.#: OMO-BSC200N15NS3G-1190

          Nuovo e originale
          BSC200N15NSG

          Mfr.#: BSC200N15NSG

          OMO.#: OMO-BSC200N15NSG-1190

          Nuovo e originale
          BSC200P03LS

          Mfr.#: BSC200P03LS

          OMO.#: OMO-BSC200P03LS-1190

          Nuovo e originale
          BSC200P03LS G

          Mfr.#: BSC200P03LS G

          OMO.#: OMO-BSC200P03LS-G-1190

          MOSFET P-Ch -30V -12.5A TDSON-8 OptiMOS P
          BSC200P03LSG

          Mfr.#: BSC200P03LSG

          OMO.#: OMO-BSC200P03LSG-1190

          Power Field-Effect Transistor, 9.9A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
          BSC200P03LSGAUMA1

          Mfr.#: BSC200P03LSGAUMA1

          OMO.#: OMO-BSC200P03LSGAUMA1-INFINEON-TECHNOLOGIES

          MOSFET P-CH 30V 12.5A TDSON-8
          Disponibilità
          Azione:
          Available
          Su ordine:
          1500
          Inserisci la quantità:
          Il prezzo attuale di BSC200P03LSG è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
          Prezzo di riferimento (USD)
          Quantità
          Prezzo unitario
          est. Prezzo
          1
          0,60 USD
          0,60 USD
          10
          0,57 USD
          5,70 USD
          100
          0,54 USD
          54,00 USD
          500
          0,51 USD
          255,00 USD
          1000
          0,48 USD
          480,00 USD
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