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FGA6065ADF

FGA6065ADF
Mfr. #:
FGA6065ADF
Produttore:
ON Semiconductor / Fairchild
Descrizione:
IGBT Transistors 650V FS Gen3 Trench IGBT
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FGA6065ADF Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
FGA6065ADF maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
Transistor IGBT
RoHS:
Y
Tecnologia:
si
Pacchetto/custodia:
TO-3PN
Stile di montaggio:
Foro passante
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
650 V
Tensione di saturazione collettore-emettitore:
1.8 V
Tensione massima dell'emettitore di gate:
20 V
Corrente continua del collettore a 25 C:
120 A
Pd - Dissipazione di potenza:
306 W
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 175 C
Serie:
FGA6065ADF
Confezione:
Tubo
Corrente continua del collettore Ic Max:
60 A
Marca:
ON Semiconductor / Fairchild
Corrente di dispersione gate-emettitore:
+/- 400 nA
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
450
sottocategoria:
IGBT
Unità di peso:
0.225789 oz
Tags
FGA60, FGA6, FGA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 120A 306000mW 3-Pin(3+Tab) TO-3PN Rail
***ark
650V FS Gen3 Trench IGBT - 3LD, TO3PN, PLASTIC, EIAJ SC-65, ISOLATED
***rchild Semiconductor
This ADF IGBT series adopted Field Stop Trench 3rd generation IGBT which offer extreme low Rds(on) and much faster switching characteristics for outstanding efficiency. And this kind of technology is fully optimized to variety PFC (Power Factor Correction) topology ; Single boost, Multi channel interleaved etc with over 20KHz switching performance. TO3P package provide Super Low thermal resistance for much wider SOA for system stability.
***ical
Trans IGBT Chip N=-CH 650V 120A 306000mW 3-Pin(3+Tab) TO-3PN Rail
***emi
IGBT, 650 V, 60 A Field Stop Trench
***r Electronics
Insulated Gate Bipolar Transistor, 120A I(C), 650V V(BR)CES, N-Channel
*** Electronic Components
IGBT Transistors FS3TIGBT TO3PN 60A 650V
***nell
FAST & ULTRAFAST RECOVERY RECTIFIERS;
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s new series of field stop 3rd generation IGBTs offer the optimum performance for Welder applications where low conduction and switching losses are essential.
***icroelectronics
Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
***ical
Trans IGBT Chip N-CH 650V 120A 470000mW 3-Pin(3+Tab) TO-3P Tube
***nell
IGBT, SINGLE, 650V, 120A, TO-3P; DC Collector Current: 120A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 469W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-3P; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HB Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (07-Jul-2017)
***icroelectronics
Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
***ical
Trans IGBT Chip N-CH 650V 120A 470000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, SINGLE, 650V, 120A, TO-247; DC Collector Current: 120A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 469W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pin
***icroelectronics
Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
***ical
Trans IGBT Chip N-CH 650V 120A 470000mW 3-Pin(3+Tab) TO-247 Tube
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 120A I(C), 650V V(BR)CES, N-Channel, TO-247
***ronik
IGBT 650V 80A 1,8V TO247 long D
*** Electronic Components
IGBT Transistors IGBT & Power Bipolar
***DA Technology Co., Ltd.
Product Description Demo for Development.
*** Source Electronics
Trans IGBT Chip N-CH 650V 120A 600000mW 3-Pin(3+Tab) TO-3P Tube / IGBT 650V 120A 600W TO3P
***-Wing Technology
In a Tube of 30, ON Semiconductor FGA60N65SMD IGBT, 120 A 650 V, 3-Pin TO-3PN
***nell
IGBT, 650V, 120A, TO-3PN; DC Collector Current: 120A; Collector Emitter Saturation Voltage Vce(on): 1.9V; Power Dissipation Pd: 600W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-3PN; No. of Pins: 3Pins;
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
***ical
Trans IGBT Chip N-CH 650V 120A 395000mW 3-Pin(3+Tab) TO-247 Tube
***ineon SCT
Infineon’s new TRENCHSTOP™5 IGBT technology redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications, PG-TO247-3, RoHS
***ark
Igbt, Single, 650V, 120A, To-247; Dc Collector Current:120A; Collector Emitter Saturation Voltage Vce(On):1.65V; Power Dissipation Pd:395W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:To-247; No. Of Pins:3Pins; Rohs Compliant: Yes |Infineon IGW75N65H5XKSA1
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons Best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
Field Stop IGBTs
ON Semiconductor Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. These IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.
FGA6065ADF Field Stop Trench IGBT
ON Semiconductor FGA6065ADF Field Stop Trench IGBT is an adopted third generation IGBT with extreme low Rds(on). It has faster-switching characteristics for outstanding efficiency. It's fully optimized to a variety of PFC (Power Factor Correction) topology like single boost, multichannel interleaved and more with over 20KHz switching performance. The TO3P package provides Super Low thermal resistance for a much wider SOA for system stability.Learn More
FGAFx0N60 Field Stop IGBTs
ON Semiconductor FGAFx0N60 650V Field Stop IGBTs use a novel field stop IGBT technology. These IGBTs feature high current capability, low saturation voltage, high input impedance, and fast switching. The FGAFx0N60 IGBTs offer the optimum performance for solar inverters, UPS, welder, and PFC applications that require low conduction and switching losses.
Parte # Mfg. Descrizione Azione Prezzo
FGA6065ADF
DISTI # V99:2348_14141231		ON Semiconductor650V FS GEN3 TRENCH IGBT450
  • 1000:$2.8720
  • 500:$3.3150
  • 250:$3.7240
  • 100:$3.9650
  • 10:$4.6210
  • 1:$6.0203
FGA6065ADF
DISTI # FGA6065ADF-ND		ON SemiconductorIGBT 650V 120A 306W TO3P
RoHS: Compliant
Min Qty: 450
Container: Tube		Temporarily Out of Stock
  • 450:$1.9922
FGA6065ADF
DISTI # 30196974		ON Semiconductor650V FS GEN3 TRENCH IGBT450
  • 3:$6.0203
FGA6065ADF
DISTI # FGA6065ADF		ON SemiconductorTrans IGBT Chip N-CH 650V 120A 3-Pin TO-3PN Tube (Alt: FGA6065ADF)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 60
  • 1000:€1.1900
  • 100:€1.2900
  • 500:€1.2900
  • 50:€1.3900
  • 25:€1.4900
  • 10:€1.5900
  • 1:€1.7900
FGA6065ADF
DISTI # FGA6065ADF		ON SemiconductorTrans IGBT Chip N-CH 650V 120A 3-Pin TO-3PN Tube - Bulk (Alt: FGA6065ADF)
Min Qty: 108
Container: Bulk		Americas - 0
  • 1080:$2.7900
  • 324:$2.8900
  • 540:$2.8900
  • 108:$2.9900
  • 216:$2.9900
FGA6065ADF
DISTI # FGA6065ADF		ON SemiconductorTrans IGBT Chip N-CH 650V 120A 3-Pin TO-3PN Tube - Rail/Tube (Alt: FGA6065ADF)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 2700:$1.1900
  • 4500:$1.1900
  • 450:$1.2900
  • 900:$1.2900
  • 1800:$1.2900
FGA6065ADF
DISTI # 01AC8666		ON SemiconductorFS3TIGBT TO3PN 60A 650V / TUBE0
  • 1000:$3.7200
  • 500:$3.9500
  • 250:$4.2400
  • 100:$4.6200
  • 1:$5.6200
FGA6065ADF
DISTI # 512-FGA6065ADF		ON SemiconductorIGBT Transistors 650V FS Gen3 Trench IGBT
RoHS: Compliant		1040
  • 1:$5.5100
  • 10:$4.6900
  • 100:$4.0600
  • 250:$3.8500
  • 500:$3.4600
  • 1000:$2.9100
  • 2500:$2.7700
FGA6065ADFFairchild Semiconductor Corporation 
RoHS: Not Compliant		403
  • 1000:$1.5000
  • 500:$1.5800
  • 100:$1.6400
  • 25:$1.7100
  • 1:$1.8500
FGA6065ADF
DISTI # XSKDRABV0037673		ON SEMICONDUCTOR 
RoHS: Compliant		360 in Stock0 on Order
  • 360:$1.9100
  • 244:$2.0500
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Disponibilità
Azione:
Available
Su ordine:
1984
Inserisci la quantità:
Il prezzo attuale di FGA6065ADF è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
5,51 USD
5,51 USD
10
4,69 USD
46,90 USD
100
4,06 USD
406,00 USD
250
3,85 USD
962,50 USD
500
3,46 USD
1 730,00 USD
1000
2,91 USD
2 910,00 USD
2500
2,77 USD
6 925,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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