GS8160E36DGT-333I

GS8160E36DGT-333I
Mfr. #:
GS8160E36DGT-333I
Produttore:
GSI Technology
Descrizione:
SRAM 2.5 or 3.3V 512K x 36 18M
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
GS8160E36DGT-333I Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
GS8160E36DGT-333I maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Tecnologia GSI
Categoria di prodotto:
SRAM
RoHS:
Y
Dimensione della memoria:
18 Mbit
Organizzazione:
512 k x 36
Orario di accesso:
4.5 ns
Frequenza massima di clock:
333 MHz
Tipo di interfaccia:
Parallelo
Tensione di alimentazione - Max:
3.6 V
Tensione di alimentazione - Min:
2.3 V
Corrente di alimentazione - Max:
280 mA, 335 mA
Temperatura di esercizio minima:
- 40 C
Temperatura massima di esercizio:
+ 85 C
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
TQFP-100
Confezione:
Vassoio
Tipo di memoria:
SDR
Serie:
GS8160E36DGT
Tipo:
Conduttura/Flusso passante
Marca:
Tecnologia GSI
Sensibile all'umidità:
Tipologia di prodotto:
SRAM
Quantità confezione di fabbrica:
36
sottocategoria:
Memoria e archiviazione dati
Nome depositato:
SyncBurst
Tags
GS8160E36DGT-33, GS8160E36DGT-3, GS8160E36D, GS8160E36, GS8160E3, GS8160E, GS8160, GS816, GS81, GS8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
SRAM Chip Sync Quad 2.5V/3.3V 18M-Bit 512K x 36 4.5ns/2.5ns 100-Pin TQFP
***p One Stop Global
SRAM Chip Sync Dual 3.3V 18M-bit 1M x 18 3.1ns 100-Pin TQFP
***-Wing Technology
e3 Surface Mount Tray 1MX18 ic memory 200MHz 3.1ns 1.6mm 475mA
*** Stop Electro
Cache SRAM, 1MX18, CMOS, PQFP100
***or
IC SRAM 18MBIT PARALLEL 100TQFP
***ark
18Mb,pipeline,sync,1Mb X 18,200Mhz,3.3V Or 2.5V I/O,100 Pin Tqfp, Rohs |Integrated Silicon Solution (Issi) IS61LPS102418A-200TQLI
***et
SRAM Chip Sync Dual 3.3V 18M-Bit 1M x 18 7.5ns 100-Pin TQFP
***-Wing Technology
e3 Surface Mount Tray 1MX18 ic memory 117MHz 7.5ns 1.6mm 250mA
***DA Technology Co., Ltd.
Product Description Demo for Development.
***or
IC SRAM 18MBIT PARALLEL 100TQFP
***ark
18Mb,flow-Through,sync,1Mb X 18,7.5Ns,3.3V Or 2.5V I/O,100 Pin Tqfp, Rohs |Integrated Silicon Solution (Issi) IS61LF102418A-7.5TQLI
***ical
SRAM Chip Sync Single 2.5V 18M-Bit 1M x 18 3.5ns 100-Pin TQFP Tray
***ure Electronics
Synchronous SRAM ZBT 18 Mb( 1M x 18), 166 Mhz TQFP-100
***egrated Device Technology
2.5V 1M X 18 ZBT Synchronous 2.5V I/O PipeLine SRAM
***i-Key Marketplace
IC SRAM 18MBIT PARALLEL 100TQFP
***pmh
STANDARD SRAM, 1MX36, 6.5NS PDSO
***et
SRAM Chip Sync Dual 3.3V 18M-Bit 1M x 18 3.1ns 100-Pin TQFP
***or
IC SRAM 18MBIT PARALLEL 100TQFP
***ark
18Mb,"no-Wait"/Pipeline,sync,1Mb X 18,200Mhz,3.3V/2.5V - I/O,100 Pin Tqfp, Rohs |Integrated Silicon Solution (Issi) IS61NLP102418-200TQLI
***ure Electronics
AS8C161831 Series 18 Mb (1 M x 18) 2.5 V 3.2 ns Synchronous RAM - TQFP100
***et
SRAM Chip Sync Dual 2.5V 18M-Bit 1M x 18 3.5ns 100-Pin TQFP
***se
18Mb SYNC SRAM 1M x 18 ZBT(Pipelined) 2.5V 166MHz 100TQFP
***i-Key
IC SRAM 18MBIT PARALLEL 100TQFP
***ical
SRAM Chip Sync Single 2.5V 18M-Bit 1M x 18 4.2ns 100-Pin TQFP Tray
***egrated Device Technology
2.5V 1M X 18 ZBT Synchronous 2.5V I/O PipeLine SRAM
***(Formerly Allied Electronics)
18M (1MX18) 2.5V CORE ZBT SRAM
SyncBurst SRAMs
GSI Technology SyncBurst SRAMs are a broad portfolio of Synchronous Burst (SyncBurst™) SRAMs with fast clock rates and low power. SyncBurst SRAMs provide a "burst" of (typically) 2 to 4 words in response to a single clock signal. The devices' simplified interface is designed to use a data bus's maximum bandwidth. SyncBurst SRAMs are used in military, networking, industrial, automotive and medical imaging applications where a mid-range performance point is required.Learn More
Immagine Parte # Descrizione
GS8160E36DGT-375I

Mfr.#: GS8160E36DGT-375I

OMO.#: OMO-GS8160E36DGT-375I

SRAM 2.5 or 3.3V 512K x 36 18M
GS8160E36DGT-200IV

Mfr.#: GS8160E36DGT-200IV

OMO.#: OMO-GS8160E36DGT-200IV

SRAM 1.8/2.5V 512K x 36 18M
GS8160E36DGT-333

Mfr.#: GS8160E36DGT-333

OMO.#: OMO-GS8160E36DGT-333

SRAM 2.5 or 3.3V 512K x 36 18M
GS8160E32DGT-150IV

Mfr.#: GS8160E32DGT-150IV

OMO.#: OMO-GS8160E32DGT-150IV

SRAM 1.8/2.5V 512K x 32 16M
GS8160E32DGT-200IV

Mfr.#: GS8160E32DGT-200IV

OMO.#: OMO-GS8160E32DGT-200IV

SRAM 1.8/2.5V 512K x 32 16M
GS8160E32DGT-333V

Mfr.#: GS8160E32DGT-333V

OMO.#: OMO-GS8160E32DGT-333V

SRAM 1.8/2.5V 512K x 32 16M
GS8160E36DGT-333IV

Mfr.#: GS8160E36DGT-333IV

OMO.#: OMO-GS8160E36DGT-333IV

SRAM 1.8/2.5V 512K x 36 18M
GS8160E32DGT-400I

Mfr.#: GS8160E32DGT-400I

OMO.#: OMO-GS8160E32DGT-400I

SRAM 2.5 or 3.3V 512K x 32 16M
GS8160E32DGT-250I

Mfr.#: GS8160E32DGT-250I

OMO.#: OMO-GS8160E32DGT-250I

SRAM 2.5 or 3.3V 512K x 32 16M
GS8160E36DGT-150

Mfr.#: GS8160E36DGT-150

OMO.#: OMO-GS8160E36DGT-150-241

SRAM Chip Sync Quad 2.5V/3.3V 18M-Bit 512K x 36 7.5ns/3.8ns 100-Pin TQFP - Bulk (Alt: GS8160E36DGT-150)
Disponibilità
Azione:
Available
Su ordine:
3000
Inserisci la quantità:
Il prezzo attuale di GS8160E36DGT-333I è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
36
21,36 USD
768,96 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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