IPP086N10N3 G

IPP086N10N3 G
Mfr. #:
IPP086N10N3 G
Produttore:
Infineon Technologies
Descrizione:
Darlington Transistors MOSFET N-Ch 100V 80A TO220-3 OptiMOS 3
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IPP086N10N3 G Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore
INFINEON
categoria di prodotto
FET - Single
Serie
OptiMOS 3
Confezione
Tubo
Alias ​​parziali
IPP086N10N3GXK IPP086N10N3GXKSA1 SP000680840
Unità di peso
0.211644 oz
Stile di montaggio
Foro passante
Nome depositato
OptiMOS
Pacchetto-Custodia
TO-220-3
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Separare
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
125 W
Massima temperatura di esercizio
+ 175 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
8 ns
Ora di alzarsi
42 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
80 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Rds-On-Drain-Source-Resistenza
8.2 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
31 ns
Tempo di ritardo all'accensione tipico
18 ns
Modalità canale
Aumento
Tags
IPP086N10N3G, IPP086N10N, IPP086, IPP08, IPP0, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Parte # Mfg. Descrizione Azione Prezzo
IPP086N10N3GXKSA1
DISTI # IPP086N10N3GXKSA1-ND
Infineon Technologies AGMOSFET N-CH 100V 80A TO220-3
RoHS: Compliant
Min Qty: 1
Container: Tube
940In Stock
  • 1000:$0.9148
  • 500:$1.0839
  • 100:$1.3658
  • 10:$1.6760
  • 1:$1.8500
IPP086N10N3GHKSA1
DISTI # IPP086N10N3GHKSA1-ND
Infineon Technologies AGMOSFET N-CH 100V 80A TO220-3
RoHS: Compliant
Min Qty: 500
Container: Tube
Limited Supply - Call
    IPP086N10N3GXK
    DISTI # SP000680840
    Infineon Technologies AGTrans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-220 Tube (Alt: SP000680840)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    Europe - 3500
    • 1:€0.9089
    • 10:€0.8079
    • 25:€0.7269
    • 50:€0.6609
    • 100:€0.6059
    • 500:€0.5589
    • 1000:€0.5189
    IPP086N10N3 G
    DISTI # IPP086N10N3 G
    Infineon Technologies AGTrans MOSFET N-CH 100V 80A 3-Pin TO-220 Tube (Alt: IPP086N10N3 G)
    RoHS: Compliant
    Min Qty: 500
    Container: Tube
    Asia - 0
      IPP086N10N3 G
      DISTI # SP000680840
      Infineon Technologies AGTrans MOSFET N-CH 100V 80A 3-Pin TO-220 Tube (Alt: SP000680840)
      RoHS: Compliant
      Min Qty: 1
      Container: Tube
      Europe - 0
      • 1:€0.9629
      • 10:€0.8079
      • 25:€0.6749
      • 50:€0.5879
      • 100:€0.5759
      • 500:€0.5609
      • 1000:€0.5509
      IPP086N10N3GXK
      DISTI # IPP086N10N3GXKSA1
      Infineon Technologies AGTrans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: IPP086N10N3GXKSA1)
      RoHS: Compliant
      Min Qty: 1000
      Container: Tube
      Americas - 0
      • 1000:$0.5899
      • 2000:$0.5689
      • 3000:$0.5479
      • 5000:$0.5299
      • 10000:$0.5199
      IPP086N10N3GXKSA1
      DISTI # 12AC9726
      Infineon Technologies AGMOSFET, N-CH, 100V, 80A, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:80A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0074ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.7V,Power RoHS Compliant: Yes393
      • 1:$2.0100
      • 10:$1.8200
      • 100:$1.5000
      • 500:$1.1900
      • 1000:$1.0100
      IPP086N10N3 G
      DISTI # 726-IPP086N10N3G
      Infineon Technologies AGMOSFET N-Ch 100V 80A TO220-3 OptiMOS 3
      RoHS: Compliant
      2481
      • 1:$1.5100
      • 10:$1.2900
      • 100:$1.0300
      • 500:$0.8970
      IPP086N10N3GHKSA1
      DISTI # 726-IPP086N10N3GHKSA
      Infineon Technologies AGMOSFET N-Ch 100V 80A TO220-3
      RoHS: Compliant
      0
        IPP086N10N3GInfineon Technologies AGPower Field-Effect Transistor, 80A I(D), 100V, 0.0086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
        RoHS: Compliant
        150
        • 1000:$0.6700
        • 500:$0.7100
        • 100:$0.7400
        • 25:$0.7700
        • 1:$0.8300
        IPP086N10N3GXKSA1
        DISTI # 8922157P
        Infineon Technologies AGMOSFET N-CHANNEL 100V 80A OPTIMOS TO220, TU110
        • 50:£1.0300
        • 100:£0.7960
        IPP086N10N3GXKSA1
        DISTI # IPP086N10N3GXKSA1
        Infineon Technologies AGTransistor: N-MOSFET,unipolar,100V,80A,125W,PG-TO220-3523
        • 1:$1.2422
        • 5:$1.0692
        • 25:$0.8593
        • 250:$0.7455
        • 1000:$0.6943
        IPP086N10N3GXKSA1
        DISTI # 2709893
        Infineon Technologies AGMOSFET, N-CH, 100V, 80A, TO-220
        RoHS: Compliant
        393
        • 1:$2.6300
        • 10:$2.2900
        • 100:$1.8700
        IPP086N10N3GInfineon Technologies AG100V,80A,N Channel Power MOSFET30
        • 1:$1.1800
        • 100:$0.9900
        • 500:$0.8700
        • 1000:$0.8500
        IPP086N10N3GXKSA1
        DISTI # XSKDRABS0006532
        Infineon Technologies AG 
        RoHS: Compliant
        2520
        • 500:$0.9839
        • 2520:$0.9183
        IPP086N10N3GXKSA1
        DISTI # 2709893
        Infineon Technologies AGMOSFET, N-CH, 100V, 80A, TO-220
        RoHS: Compliant
        913
        • 5:£1.3000
        • 25:£1.0100
        • 100:£0.8040
        • 250:£0.7790
        • 500:£0.7540
        Immagine Parte # Descrizione
        IPP086N10N3GHKSA1

        Mfr.#: IPP086N10N3GHKSA1

        OMO.#: OMO-IPP086N10N3GHKSA1

        MOSFET N-Ch 100V 80A TO220-3
        IPP086N10N3GXK

        Mfr.#: IPP086N10N3GXK

        OMO.#: OMO-IPP086N10N3GXK-1190

        Trans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: IPP086N10N3GXKSA1)
        IPP086N10

        Mfr.#: IPP086N10

        OMO.#: OMO-IPP086N10-1190

        Nuovo e originale
        IPP086N10N3

        Mfr.#: IPP086N10N3

        OMO.#: OMO-IPP086N10N3-1190

        - Bulk (Alt: IPP086N10N3)
        IPP086N10N3,086N10N

        Mfr.#: IPP086N10N3,086N10N

        OMO.#: OMO-IPP086N10N3-086N10N-1190

        Nuovo e originale
        IPP086N10N3G

        Mfr.#: IPP086N10N3G

        OMO.#: OMO-IPP086N10N3G-1190

        Power Field-Effect Transistor, 80A I(D), 100V, 0.0086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
        IPP086N10N3G , 2SD780-DW

        Mfr.#: IPP086N10N3G , 2SD780-DW

        OMO.#: OMO-IPP086N10N3G-2SD780-DW-1190

        Nuovo e originale
        IPP086N10N3G/086N10N

        Mfr.#: IPP086N10N3G/086N10N

        OMO.#: OMO-IPP086N10N3G-086N10N-1190

        Nuovo e originale
        IPP086N10N3GHF

        Mfr.#: IPP086N10N3GHF

        OMO.#: OMO-IPP086N10N3GHF-1190

        Nuovo e originale
        IPP086N10N3 G

        Mfr.#: IPP086N10N3 G

        OMO.#: OMO-IPP086N10N3-G-124

        Darlington Transistors MOSFET N-Ch 100V 80A TO220-3 OptiMOS 3
        Disponibilità
        Azione:
        Available
        Su ordine:
        5000
        Inserisci la quantità:
        Il prezzo attuale di IPP086N10N3 G è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
        Prezzo di riferimento (USD)
        Quantità
        Prezzo unitario
        est. Prezzo
        1
        0,83 USD
        0,83 USD
        10
        0,78 USD
        7,85 USD
        100
        0,74 USD
        74,35 USD
        500
        0,70 USD
        351,10 USD
        1000
        0,66 USD
        660,90 USD
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