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CSD17577Q3AT

CSD17577Q3AT
Mfr. #:
CSD17577Q3AT
Descrizione:
MOSFET 30V NCH NexFET MOSFET
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
CSD17577Q3AT Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
CSD17577Q3AT maggiori informazioni CSD17577Q3AT Product Details
Attributo del prodotto
Valore attributo
Produttore:
Texas Instruments
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
VSONP-8
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
30 V
Id - Corrente di scarico continua:
35 A
Rds On - Resistenza Drain-Source:
5.3 mOhms
Vgs th - Tensione di soglia gate-source:
1.4 V
Vgs - Tensione Gate-Source:
20 V
Qg - Carica cancello:
27 nC
Temperatura di esercizio minima:
- 40 C
Temperatura massima di esercizio:
+ 85 C
Pd - Dissipazione di potenza:
53 W
Configurazione:
Separare
Nome depositato:
NexFET
Confezione:
Bobina
Altezza:
0.9 mm
Lunghezza:
3.15 mm
Serie:
CSD17577Q3
Tipo di transistor:
1 N-Channel
Larghezza:
3 mm
Marca:
Texas Instruments
Tempo di caduta:
4 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
31 ns
Quantità confezione di fabbrica:
250
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
20 ns
Tempo di ritardo di accensione tipico:
4 ns
Unità di peso:
0.000977 oz
Tags
CSD17577, CSD1757, CSD175, CSD17, CSD1, CSD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    A***n
    A***n
    RU

    Returned the money.

    2019-05-08
    P***i
    P***i
    IT

    item never received. refunded

    2019-05-08
    A***o
    A***o
    RU

    Despite the chinese new year order was sent and very quickly delivered. Beautiful packaging, everything is fine. Took on n7ddc 5x5 and 7x7

    2019-02-14
***as Instruments
30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 6.4 mOhm 8-VSONP -55 to 150
***nell
MOSFET, N CH, 30V, 35A, VSON-8; Polarité transistor: Canal N; Courant de drain Id: 35A; Tension Vds max..: 30V; Résistance Rds(on): 0.004ohm; Tension, mesure Rds: 10V; Tension de seuil Vgs: 1.4V; Dissipation de puissance Pd: 53
***ark
Mosfet, N Ch, 30V, 35A, Vson-8; Transistor Polarity:n Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.004Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.4V; Power Dissipationrohs Compliant: Yes
***AS INSTR
This 30 V, 4.0 mΩ, SON 3.3 mm × 3.3 mm NexFET power MOSFET is designed to minimize resistance in power conversion applications.
NexFET N-Channel Power MOSFETs
OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.
TI N-Channel 8-23-12
NexFET™ Power MOSFETs
OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Parte # Descrizione Azione Prezzo
CSD17577Q3AT
DISTI # V72:2272_07248803		Trans MOSFET N-CH 30V 19A 8-Pin VSONP EP T/R
RoHS: Compliant		5
  • 1:$0.7577
CSD17577Q3AT
DISTI # 296-38336-1-ND		MOSFET N-CH 30V 35A 8VSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1283In Stock
  • 100:$0.5977
  • 10:$0.7720
  • 1:$0.8800
CSD17577Q3AT
DISTI # 296-38336-6-ND		MOSFET N-CH 30V 35A 8VSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1283In Stock
  • 100:$0.5977
  • 10:$0.7720
  • 1:$0.8800
CSD17577Q3AT
DISTI # 296-38336-2-ND		MOSFET N-CH 30V 35A 8VSON
RoHS: Compliant
Min Qty: 250
Container: Tape & Reel (TR)		1250In Stock
  • 1250:$0.3482
  • 750:$0.3798
  • 500:$0.4326
  • 250:$0.5064
CSD17577Q3AT
DISTI # CSD17577Q3AT		Trans MOSFET N-CH 30V 19A 8-Pin VSONP T/R - Tape and Reel (Alt: CSD17577Q3AT)
RoHS: Compliant
Min Qty: 1250
Container: Reel		Americas - 0
  • 1250:$0.3059
  • 1750:$0.2909
  • 3000:$0.2809
  • 6250:$0.2719
  • 12500:$0.2639
CSD17577Q3AT
DISTI # CSD17577Q3AT		Trans MOSFET N-CH 30V 19A 8-Pin VSONP T/R (Alt: CSD17577Q3AT)
RoHS: Compliant
Min Qty: 250
Container: Tape and Reel		Europe - 0
  • 250:€0.4269
  • 500:€0.3489
  • 1000:€0.3199
  • 1500:€0.2739
  • 2500:€0.2559
CSD17577Q3AT .
DISTI # 94X0489		MOSFET Transistor, N Channel, 35 A, 30 V, 0.004 ohm, 10 V, 1.4 V RoHS Compliant: Yes0
    CSD17577Q3ATCSD17577Q3A3750
    • 1000:$0.2400
    • 750:$0.2700
    • 500:$0.3400
    • 250:$0.4100
    • 100:$0.4500
    • 25:$0.5200
    • 10:$0.5600
    • 1:$0.6300
    CSD17577Q3A
    DISTI # 595-CSD17577Q3A    		MOSFET 30V, N-channel NexFET Pwr MOSFET
    RoHS: Compliant    		41171
    • 1:$0.6900
    • 10:$0.5700
    • 100:$0.3680
    • 1000:$0.2950
    • 2500:$0.2670
    • 5000:$0.2490
    • 10000:$0.2400
    • 25000:$0.2300
    CSD17577Q3AT
    DISTI # 595-CSD17577Q3AT    		MOSFET 30V NCH NexFET MOSFET
    RoHS: Compliant    		621
    • 1:$0.7900
    • 10:$0.6600
    • 100:$0.4220
    • 250:$0.4220
    • 1000:$0.3380
    • 2000:$0.3060
    • 5000:$0.2850
    • 10000:$0.2750
    • 25000:$0.2640
    CSD17577Q3AT
    DISTI # CSD17577Q3AT    		Transistor: N-MOSFET,unipolar,30V,35A,53W,VSONP8 3,3x3,3mm191
    • 1:$0.7800
    • 5:$0.5800
    CSD17577Q3AT .
    DISTI # 2447867    		MOSFET, N CH, 30V, 35A, VSON-8
    RoHS: Compliant    		1
    • 500:£0.2810
    • 250:£0.3020
    • 100:£0.3220
    • 25:£0.5150
    • 5:£0.5660
    CSD17577Q3AT .
    DISTI # 2447867    		MOSFET, N CH, 30V, 35A, VSON-8
    RoHS: Compliant    		0
    • 10000:$0.4140
    • 5000:$0.4290
    • 2000:$0.4610
    • 1000:$0.5090
    • 250:$0.5730
    • 100:$0.6360
    • 10:$0.9950
    • 1:$1.1900
    CSD17577Q3AT .
    DISTI # 2447867RL    		MOSFET, N CH, 30V, 35A, VSON-8
    RoHS: Compliant    		0
    • 10000:$0.4140
    • 5000:$0.4290
    • 2000:$0.4610
    • 1000:$0.5090
    • 250:$0.5730
    • 100:$0.6360
    • 10:$0.9950
    • 1:$1.1900
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    OMO.#: OMO-TPS7A1901DRBR

    		 LDO Voltage Regulators 40-V 450-mA low-IQ low-dropout (LDO) linear regulator with power good 8-SON -40 to 125
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    Mfr.#: KIT-14409

    OMO.#: OMO-KIT-14409

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    OMO.#: OMO-KIT-14409-SPARKFUN

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    Disponibilità
    Azione:
    609
    Su ordine:
    2592
    Inserisci la quantità:
    Il prezzo attuale di CSD17577Q3AT è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    0,79 USD
    0,79 USD
    10
    0,66 USD
    6,60 USD
    100
    0,42 USD
    42,20 USD
    A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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