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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| SIA414DJ-T1-GE3 DISTI # V72:2272_09216826 | Vishay Intertechnologies | Trans MOSFET N-CH 8V 12A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant | 3026 |
|
| SIA414DJ-T1-GE3 DISTI # V36:1790_09216826 | Vishay Intertechnologies | Trans MOSFET N-CH 8V 12A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant | 0 |
|
| SIA414DJ-T1-GE3 DISTI # SIA414DJ-T1-GE3CT-ND | Vishay Siliconix | MOSFET N-CH 8V 12A SC70-6 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 7980In Stock |
|
| SIA414DJ-T1-GE3 DISTI # SIA414DJ-T1-GE3DKR-ND | Vishay Siliconix | MOSFET N-CH 8V 12A SC70-6 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 7980In Stock |
|
| SIA414DJ-T1-GE3 DISTI # SIA414DJ-T1-GE3TR-ND | Vishay Siliconix | MOSFET N-CH 8V 12A SC70-6 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR) | 6000In Stock |
|
| SIA414DJ-T1-GE3 DISTI # 25790297 | Vishay Intertechnologies | Trans MOSFET N-CH 8V 12A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant | 3026 |
|
| SIA414DJ-T1-GE3 DISTI # SIA414DJ-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 8V 12A 6-Pin PowerPAK SC-70 T/R (Alt: SIA414DJ-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel | Asia - 0 | |
| SIA414DJ-T1-GE3 DISTI # SIA414DJ-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 8V 12A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA414DJ-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel | Americas - 0 |
|
| SIA414DJ-T1-GE3. DISTI # 81AC9904 | Vishay Intertechnologies | N-CHANNEL 8-V (D-S) MOSFET ROHS COMPLIANT: NO | 0 |
|
| SIA414DJ-T1-GE3 DISTI # 85W0169 | Vishay Intertechnologies | N CHANNEL MOSFET, 8V, 12A, SC-70, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:8V,On Resistance Rds(on):0.009ohm,Rds(on) Test Voltage Vgs:5V,Threshold Voltage Vgs:800mV RoHS Compliant: Yes | 0 |
|
| SIA414DJ-T1-GE3 DISTI # 16P3612 | Vishay Intertechnologies | N CHANNEL MOSFET, 8V, 12A, SC-70,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:8V,On Resistance Rds(on):0.009ohm,Rds(on) Test Voltage Vgs:5V,Threshold Voltage Vgs:800mV,Product Range:- RoHS Compliant: Yes | 0 |
|
| SIA414DJ-T1-GE3 DISTI # 781-SIA414DJ-T1-GE3 | Vishay Intertechnologies | MOSFET 8.0V 12A 19W 11mohm @ 4.5V RoHS: Compliant | 3376 |
|
| SIA414DJ-T1-E3 DISTI # 781-SIA414DJ-E3 | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 781-SIA414DJ-T1-GE3 RoHS: Compliant | 0 | |
| SIA414DJ-T1-GE3 | Vishay Semiconductors | 12A, 8V, 0.011OHM, N-CHANNEL, SI, POWER, MOSFET | 6495 |
|
| SIA414DJ-T1-GE3 | Vishay Siliconix | 12A, 8V, 0.011OHM, N-CHANNEL, SI, POWER, MOSFET | 3234 |
|
| SIA414DJ-T1-GE3 | Vishay Dale | 12A, 8V, 0.011OHM, N-CHANNEL, SI, POWER, MOSFET | 2930 |
|
| SIA414DJ-T1-GE3 | Vishay Intertechnologies | MOSFET 8.0V 12A 19W 11mohm @ 4.5V RoHS: Compliant | Americas - | |
| SIA414DJ-T1-GE3 DISTI # 1838996 | Vishay Intertechnologies | MOSFET,N CH,8V,12A,SC70-6 RoHS: Compliant | 0 |
|
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: SIA421DJ-T1-GE3 OMO.#: OMO-SIA421DJ-T1-GE3 |
MOSFET -30V Vds 20V Vgs PowerPAK SC-70 |
|
|
Mfr.#: SIA445EDJT-T1-GE3 OMO.#: OMO-SIA445EDJT-T1-GE3 |
MOSFET -20V Vds 12V Vgs Thin PowerPAK SC-70 |
|
Mfr.#: SIA921EDJ-T4-GE3 OMO.#: OMO-SIA921EDJ-T4-GE3 |
MOSFET -20V Vds 12V Vgs PowerPAK SC-70 |
|
Mfr.#: SIA436DJ-T4-GE3 OMO.#: OMO-SIA436DJ-T4-GE3 |
MOSFET 8V Vds 5V Vgs PowerPAK SC-70 |
|
Mfr.#: SIA0903X01-007 OMO.#: OMO-SIA0903X01-007-1190 |
Nuovo e originale |
|
|
Mfr.#: SIA2224 OMO.#: OMO-SIA2224-1190 |
Nuovo e originale |
|
Mfr.#: SIA439EDJ-T1-GE3 OMO.#: OMO-SIA439EDJ-T1-GE3-VISHAY |
MOSFET P-CH 20V 28A SC-70-6L |
|
Mfr.#: SIA811ADJ-T1-GE3 OMO.#: OMO-SIA811ADJ-T1-GE3-VISHAY |
MOSFET P-CH 20V 4.5A PPAK SC70-6 |
|
|
Mfr.#: SIA911EDJ-T1-GE3 OMO.#: OMO-SIA911EDJ-T1-GE3-VISHAY |
MOSFET 2P-CH 20V 4.5A SC70-6 |
|
|
Mfr.#: SIA915DJ-T4-GE3 OMO.#: OMO-SIA915DJ-T4-GE3-VISHAY |
MOSFET 2P-CH 30V SC70-6 |