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PSMN1R5-30BLEJ

PSMN1R5-30BLEJ
Mfr. #:
PSMN1R5-30BLEJ
Produttore:
Nexperia
Descrizione:
MOSFET N-channel 30 V 1.5 mo FET
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
PSMN1R5-30BLEJ Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
PSMN1R5-30BLEJ maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Nexperia
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
TO-263-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
30 V
Id - Corrente di scarico continua:
120 A
Rds On - Resistenza Drain-Source:
1.3 mOhms
Vgs th - Tensione di soglia gate-source:
1.7 V
Vgs - Tensione Gate-Source:
20 V
Qg - Carica cancello:
228 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 175 C
Pd - Dissipazione di potenza:
401 W
Configurazione:
Separare
Modalità canale:
Aumento
Confezione:
Bobina
Tipo di transistor:
1 N-Channel
Marca:
Nexperia
Tempo di caduta:
99.2 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
156.1 ns
Quantità confezione di fabbrica:
800
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
191.8 ns
Tempo di ritardo di accensione tipico:
100.6 ns
Unità di peso:
0.139332 oz
Tags
PSMN1R5-30B, PSMN1R5-3, PSMN1R5, PSMN1R, PSMN1, PSMN, PSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***peria
PSMN1R5-30BLE - N-channel 30 V 1.5 mΩ logic level MOSFET in D2PAK
***ure Electronics
Low Voltage MOSFET - 30V 120A D2PAK - SOT404 package
***p One Stop Japan
Trans MOSFET N-CH 30V 120A 3-Pin(2+Tab) D2PAK T/R
***i-Key
MOSFET N-CH 30V D2PAK
***ark
Transistor Polarity:n Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:30V; On Resistance Rds(On):1.5Mohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Dissipation Pd:401W; No. Of Pins:3Pins
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 30V, 120A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0013ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Dissipation Pd:401W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C
***nell
MOSFET, CANALE N, 30V, 120A, D2PAK; Polarità Transistor:Canale N; Corrente Continua di Drain Id:120A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):0.0013ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:1.7V; Dissipazione di Potenza Pd:401W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Intervallo Temperatura di Esercizio:Da -55°C a +175°C; Temperatura di Esercizio Min:-55°C
PSMN N-Channel MOSFETs
Nexperia PSMN N-Channel MOSFETs include standard and logic level, regular and enhancement mode, N-Channel MOSFETs in LFPAK, I2PAK, TO-220, and DFN3333-8 packages qualified to 150°C or 175°C. These Nexperia PSMN N-Channel MOSFETs are designed and qualified for use in a wide range of industrial, communications, and domestic equipment. The Nexperia logic level enhancement mode N-Channel MOSFETs in LFPAK packages feature ultra low QG, QGD, and QOSS for high system efficiencies at low and high loads, and ultra low RDS(on) and low parasitic inductance. They are also optimized for 4.5V gate drive utilizing NextPower Superjunction technology. The Nexperia standard and logic level N-Channel MOSFETs in I2PAK and TO-220 packages feature high efficiency due to low switching and conduction losses and are suitable for standard or logic level gate drive sources.
Parte # Mfg. Descrizione Azione Prezzo
PSMN1R5-30BLEJ
DISTI # V36:1790_06540853		NexperiaTrans MOSFET N-CH 30V 120A 3-Pin(2+Tab) D2PAK T/R0
    PSMN1R5-30BLEJ
    DISTI # V72:2272_06540853    		NexperiaTrans MOSFET N-CH 30V 120A 3-Pin(2+Tab) D2PAK T/R0
      PSMN1R5-30BLEJ
      DISTI # 1727-1101-1-ND      		NexperiaMOSFET N-CH 30V 120A D2PAK
      RoHS: Compliant
      Min Qty: 1
      Container: Cut Tape (CT)      		332In Stock
      • 100:$2.0996
      • 10:$2.6120
      • 1:$2.9100
      PSMN1R5-30BLEJ
      DISTI # 1727-1101-6-ND      		NexperiaMOSFET N-CH 30V 120A D2PAK
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		332In Stock
      • 100:$2.0996
      • 10:$2.6120
      • 1:$2.9100
      PSMN1R5-30BLEJ
      DISTI # 1727-1101-2-ND      		NexperiaMOSFET N-CH 30V 120A D2PAK
      RoHS: Compliant
      Min Qty: 800
      Container: Tape & Reel (TR)      		On Order
      • 1600:$1.4430
      • 800:$1.7110
      PSMN1R5-30BLEJ
      DISTI # PSMN1R5-30BLEJ      		NexperiaTrans MOSFET N-CH 30V 120A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: PSMN1R5-30BLEJ)
      RoHS: Compliant
      Min Qty: 4800
      Container: Reel      		Americas - 0
      • 48000:$1.2418
      • 24000:$1.2725
      • 14400:$1.3047
      • 9600:$1.3386
      • 4800:$1.3562
      PSMN1R5-30BLEJ
      DISTI # PSMN1R5-30BLEJ      		NexperiaTrans MOSFET N-CH 30V 120A 3-Pin(2+Tab) D2PAK T/R - Cut TR (SOS) (Alt: PSMN1R5-30BLEJ)
      RoHS: Compliant
      Min Qty: 1
      Container: Cut Tape      		Americas - 0
        PSMN1R5-30BLEJ.
        DISTI # 23AC9025        		NexperiaTransistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:30V,On Resistance Rds(on):1.5mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V,Power Dissipation Pd:401W,No. of Pins:3Pins0
        • 48000:$1.2500
        • 24000:$1.2800
        • 14400:$1.3100
        • 9600:$1.3400
        • 1:$1.3600
        PSMN1R5-30BLEJ
        DISTI # 771-PSMN1R5-30BLEJ        		NexperiaMOSFET N-channel 30 V 1.5 mo FET
        RoHS: Compliant        		3854
        • 1:$2.7200
        • 10:$2.3100
        • 100:$2.0100
        • 250:$1.9000
        • 500:$1.7100
        • 800:$1.4400
        • 2400:$1.3700
        • 4800:$1.3200
        PSMN1R5-30BLEJ
        DISTI # 2281225        		NexperiaMOSFET, N-CH, 30V, 120A, D2PAK
        RoHS: Compliant        		0
        • 2500:$2.0900
        • 1000:$2.2000
        • 500:$2.3100
        • 250:$2.4300
        • 100:$2.5800
        • 25:$2.8000
        • 10:$3.1300
        • 1:$3.4600
        PSMN1R5-30BLEJ
        DISTI # 2281225        		NexperiaMOSFET, N-CH, 30V, 120A, D2PAK
        RoHS: Compliant        		0
        • 500:£1.1100
        • 250:£1.4600
        • 100:£1.5600
        • 10:£1.7800
        • 1:£2.3700
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        Disponibilità
        Azione:
        Available
        Su ordine:
        1986
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        Prezzo di riferimento (USD)
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        est. Prezzo
        1
        2,72 USD
        2,72 USD
        10
        2,31 USD
        23,10 USD
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        2,01 USD
        201,00 USD
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        1,90 USD
        475,00 USD
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        1,71 USD
        855,00 USD
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