LMG1210RVRT

LMG1210RVRT
Mfr. #:
LMG1210RVRT
Descrizione:
Gate Drivers EGAN FET 200V HALF-BRIDGE DRIVER
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
LMG1210RVRT Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
LMG1210RVRT maggiori informazioni LMG1210RVRT Product Details
Attributo del prodotto
Valore attributo
Produttore:
Texas Instruments
Categoria di prodotto:
Autisti del cancello
RoHS:
Y
Prodotto:
Driver del cancello MOSFET
Tipo:
Lato alto, lato basso
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
WQFN-19
Numero di conducenti:
2 Driver
Numero di uscite:
2 Output
Corrente di uscita:
3 A
Ora di alzarsi:
0.5 ns
Tempo di caduta:
0.5 ns
Tensione di alimentazione - Min:
4.75 V
Tensione di alimentazione - Max:
18 V
Ritardo di propagazione - Max:
20 ns
Corrente di alimentazione operativa:
380 uA
Temperatura di esercizio minima:
- 40 C
Temperatura massima di esercizio:
+ 125 C
Serie:
LMG1210
Confezione:
Bobina
Intervallo operativo di temperatura:
- 40 C to + 125 C
Tensione di uscita:
5 V
Tecnologia:
GaN
Marca:
Texas Instruments
Tipo di logica:
TTL
Tempo di spegnimento - Massimo:
18 ns
Tempo massimo di ritardo allo spegnimento:
18 ns
Tempo massimo di ritardo all'accensione:
18 ns
Sensibile all'umidità:
Tipologia di prodotto:
Autisti del cancello
Rds On - Resistenza Drain-Source:
400 mOhms
Quantità confezione di fabbrica:
250
sottocategoria:
PMIC - CI di gestione dell'alimentazione
Tags
LMG12, LMG1, LMG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    C***d
    C***d
    UK

    There's a good video on YouTube demonstrating how to program the timer, search for '35238MP'.

    2019-06-28
    N***a
    N***a
    RU

    Class

    2019-05-13
***AS INSRUMENT
The LMG1210 is a 200-V, half-bridge MOSFET and Gallium Nitride Field Effect Transistor (GaN FET) driver designed for ultra-high frequency, high-efficiency applications that features adjustable deadtime capability, very small propagation delay, and 3.4-ns high-side low-side matching to optimize system efficiency. This part also features an internal LDO which ensures a gate-drive voltage of 5-V regardless of supply voltage.
***AS INSRUMENTS
To enable best performance in a variety of applications, the LMG1210 allows the designer to choose the optimal bootstrap diode to charge the high-side bootstrap capacitor. An internal switch turns the bootstrap diode off when the low side is off, effectively preventing the high-side bootstrap from overcharging and minimizing the reverse recovery charge. Additional parasitic capacitance across the GaN FET is minimized to less than 1 pF to reduce additional switching losses.
***INS
The LMG1210 features two control input modes: Independent Input Mode (IIM) and PWM mode. In IIM each of the outputs is independently controlled by a dedicated input. In PWM mode the two complementary output signals are generated from a single input and the user can adjust the dead time from 0 to 20 ns for each edge. The LMG1210 operates over a wide temperature range from –40°C to 125°C and is offered in a low-inductance WQFN package.
LMG1210 200V Half-Bridge MOSFET & GaN FET Drivers
OMO Electronic LMG1210 200V Half-Bridge MOSFET and Gallium Nitride Field Effect Transistor (GaN FET) Drivers are designed for ultra-high frequency and high-efficiency applications. The device is ideal for applications that feature adjustable deadtime capability, very small propagation delay, and 3.4ns high-side low-side matching to optimize system efficiency. The LMG1210 MOSFET and GaN FET Drivers offer an internal LDO which ensures a gate-drive voltage of 5V regardless of supply voltage.
Parte # Descrizione Azione Prezzo
LMG1210RVRT
DISTI # 32147604
1.5-A, 3-A Half-Bridge GaN Driver With Adjustable Dead Time1750
  • 1250:$3.0728
  • 500:$3.6434
  • 250:$4.0604
LMG1210RVRT
DISTI # 296-53417-1-ND
200V, 1.5A/3A HALF BRIDGE MOSFET
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
341In Stock
  • 100:$4.4528
  • 10:$5.4350
  • 1:$6.0500
LMG1210RVRT
DISTI # 296-53417-6-ND
200V, 1.5A/3A HALF BRIDGE MOSFET
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
341In Stock
  • 100:$4.4528
  • 10:$5.4350
  • 1:$6.0500
LMG1210RVRT
DISTI # 296-53417-2-ND
200V, 1.5A/3A HALF BRIDGE MOSFET
RoHS: Compliant
Min Qty: 250
Container: Tape & Reel (TR)
250In Stock
  • 1250:$3.1038
  • 500:$3.6802
  • 250:$4.1014
LMG1210RVRT
DISTI # V39:1801_23157708
1.5-A, 3-A Half-Bridge GaN Driver With Adjustable Dead Time0
    LMG1210RVRT
    DISTI # V36:1790_23157708
    1.5-A, 3-A Half-Bridge GaN Driver With Adjustable Dead Time0
      LMG1210RVRT
      DISTI # V72:2272_23157708
      1.5-A, 3-A Half-Bridge GaN Driver With Adjustable Dead Time0
        LMG1210RVRT
        DISTI # LMG1210RVRT
        GaN Driver with Adjustable Dead Time Half-Bridge Dual-Channel 200V 1.5A 19-Pin WQFN T/R - Tape and Reel (Alt: LMG1210RVRT)
        RoHS: Compliant
        Min Qty: 250
        Container: Reel
        Americas - 0
        • 2500:$2.6900
        • 1500:$2.7900
        • 1000:$2.8900
        • 500:$2.9900
        • 250:$3.1900
        XLMG1210RVRT
        DISTI # XLMG1210RVRT
        GaN Driver with Adjustable Dead Time Half-Bridge Dual-Channel 200V 1.5A 19-Pin WQFN T/R - Tape and Reel (Alt: XLMG1210RVRT)
        RoHS: Not Compliant
        Min Qty: 250
        Container: Reel
        Americas - 0
          LMG1210RVRT200V, 1.5A/3A Half bridge MOSFET and GaN FET driver with adjustable dead-time1230
          • 1000:$2.5200
          • 750:$2.5700
          • 500:$2.9700
          • 250:$3.4100
          • 100:$3.6600
          • 25:$4.0800
          • 10:$4.3700
          • 1:$4.8600
          LMG1210RVRT
          DISTI # 595-LMG1210RVRT
          Gate Drivers EGAN FET 200V HALF-BRIDGE DRIVER
          RoHS: Compliant
          1320
          • 1:$5.8700
          • 10:$5.2800
          • 100:$4.3200
          • 250:$4.0500
          • 500:$3.6800
          • 1000:$3.1000
          • 2500:$2.9400
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          Mfr.#: 22201C106MAT2A

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          GRM188R6YA106MA73D

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          OMO.#: OMO-XAL1510-153MED-1190

          Fixed Inductors 15uH 20% 18A 12.4mOhms AEC-Q200
          Disponibilità
          Azione:
          Available
          Su ordine:
          1984
          Inserisci la quantità:
          Il prezzo attuale di LMG1210RVRT è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
          Prezzo di riferimento (USD)
          Quantità
          Prezzo unitario
          est. Prezzo
          1
          5,87 USD
          5,87 USD
          10
          5,28 USD
          52,80 USD
          100
          4,32 USD
          432,00 USD
          A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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