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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| SI8817DB-T2-E1 DISTI # V72:2272_09216539 | Vishay Intertechnologies | Trans MOSFET P-CH 20V 2.9A 4-Pin Micro Foot T/R RoHS: Compliant | 3005 |
|
| SI8817DB-T2-E1 DISTI # V36:1790_09216539 | Vishay Intertechnologies | Trans MOSFET P-CH 20V 2.9A 4-Pin Micro Foot T/R RoHS: Compliant | 0 |
|
| SI8817DB-T2-E1 DISTI # 25790132 | Vishay Intertechnologies | Trans MOSFET P-CH 20V 2.9A 4-Pin Micro Foot T/R RoHS: Compliant | 3005 |
|
| SI8817DB-T2-E1 DISTI # SI8817DB-T2-E1 | Vishay Intertechnologies | Trans MOSFET P-CH 20V 2.9A 4-Pin Micro Foot T/R - Tape and Reel (Alt: SI8817DB-T2-E1) RoHS: Not Compliant Min Qty: 3000 Container: Reel | Americas - 0 | |
| SI8817DB-T2-E1 DISTI # SI8817DB-T2-E1 | Vishay Intertechnologies | Trans MOSFET P-CH 20V 2.9A 4-Pin Micro Foot T/R (Alt: SI8817DB-T2-E1) RoHS: Compliant Min Qty: 1 Container: Tape and Reel | Europe - 0 |
|
| SI8817DB-T2-E1. DISTI # 28AC2186 | Vishay Intertechnologies | Transistor Polarity:P Channel,Continuous Drain Current Id:2.9A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.061ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-1V,Power Dissipation Pd:900mW,No. of Pins:4Pins RoHS Compliant: No | 0 | |
| SI8817DB-T2-E1 | Vishay Intertechnologies | 3000 | ||
| SI8817DB-T2-E1 | Vishay Siliconix | 195 |
| |
| SI8817DB-T2-E1 | Vishay Siliconix | 156 |
|
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: SI8817DB-T2-E1 OMO.#: OMO-SI8817DB-T2-E1-VISHAY |
MOSFET P-CH 20V MICROFOOT |
|
Mfr.#: SI8817DB-T2-E1. OMO.#: OMO-SI8817DB-T2-E1--1190 |
Transistor Polarity:P Channel, Continuous Drain Current Id:2.9A, Drain Source Voltage Vds:20V, On Resistance Rds(on):0.061ohm, Rds(on) Test Voltage Vgs:-4.5V, Threshold Voltage Vgs:-1V, Power Di |