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PD20015-E

PD20015-E
Mfr. #:
PD20015-E
Produttore:
STMicroelectronics
Descrizione:
RF MOSFET Transistors N-Ch, 13.6V 15W LDMOST family
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
PD20015-E Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
PD20015-E DatasheetPD20015-E Datasheet (P4-P6)PD20015-E Datasheet (P7-P9)PD20015-E Datasheet (P10-P12)PD20015-E Datasheet (P13-P15)PD20015-E Datasheet (P16)
ECAD Model:
Maggiori informazioni:
PD20015-E maggiori informazioni PD20015-E Product Details
Attributo del prodotto
Valore attributo
Produttore:
STMicroelectronics
Categoria di prodotto:
Transistor MOSFET RF
RoHS:
Y
Polarità del transistor:
Canale N
Tecnologia:
si
Id - Corrente di scarico continua:
7 A
Vds - Tensione di rottura Drain-Source:
40 V
Guadagno:
11 dB
Potenza di uscita:
15 W
Temperatura di esercizio minima:
- 65 C
Temperatura massima di esercizio:
+ 150 C
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
PowerSO-10RF-Formed-4
Confezione:
Tubo
Configurazione:
Separare
Altezza:
3.5 mm
Lunghezza:
7.5 mm
Frequenza operativa:
2 GHz
Serie:
PD20015-E
Tipo:
MOSFET di potenza RF
Larghezza:
9.4 mm
Marca:
STMicroelectronics
Modalità canale:
Aumento
Sensibile all'umidità:
sì
Pd - Dissipazione di potenza:
79 W
Tipologia di prodotto:
Transistor MOSFET RF
Quantità confezione di fabbrica:
400
sottocategoria:
MOSFET
Vgs - Tensione Gate-Source:
15 V
Unità di peso:
0.105822 oz
Tags
PD20015, PD2001, PD200, PD20, PD2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel RF Power Transistor LdmoST Operates at 13.6V at Frequencies up to 1GHz
***p One Stop
Trans RF MOSFET N-CH 40V 7A 3-Pin(2+Tab) PowerSO-10RF (Formed lead) Tube
***icroelectronics SCT
RF power transistor, LdmoST family N-channel enhancement-mode lateral MOSFETs
***icroelectronics
15W 13.6V 2GHz LDMOS in PowerSO-10RF plastic package
***r Electronics
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
***ark
RF TRANSISTOR, 40V, 2GHZ, POWERSO-10RF; Drain Source Voltage Vds:40V; Continuous Drain Current Id:7A; Power Dissipation:79W; Operating Frequency Min:-; Operating Frequency Max:2GHz; No. of Pins:3Pins; Operating Temperature Max:165°C RoHS Compliant: Yes
***ical
Trans RF MOSFET N-CH 40V 8A 3-Pin(2+Tab) PowerSO-10RF (Formed lead) Tube
*** Source Electronics
RF power transistor, LDMOST plastic family N-channel enhancement-mode lateral MOSFETs
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***ical
Trans RF MOSFET N-CH 40V 8A 3-Pin PowerSO-10RF (Straight lead) Tube
***icroelectronics
35W 13.6V 870MHz LDMOS in PowerSO-10RF plastic package
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Power Field-Effect Transistor, 8A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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8 A 40 V N-CHANNEL Si POWER MOSFET
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ON SEMICONDUCTOR - FDD4685 - MOSFET Transistor, P Channel, 8.4 mA, -40 V, 0.023 ohm, 10 V, 1.6 V
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P-Channel PowerTrench® MOSFET, -40V, -23A, 27mΩ
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Single P-Channel 40 V 69 W 27 nC Silicon Surface Mount Mosfet - TO-252-3
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Power Field-Effect Transistor, 8.4A I(D), 40V, 0.042ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***rchild Semiconductor
This P-Channel MOSFET has been produced using Fairchild Semiconductor's proprietary PowerTrench® technology to deliver low rDS(on) and good switching characteristic offering superior performance in application.
***et
Transistor MOSFET Array Dual N-CH 40V 8A 8-Pin SOIC T/R
***ure Electronics
DUAL N-CH MOSFET SO-8 40V 16MOHM @ 10V- LEAD(PB) AND HALOGEN FREE
***ark
COMPLEMENTARY MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:8A; On Resistance, Rds(on):0.019ohm; Rds(on) Test Voltage, Vgs:4.5V ;RoHS Compliant: Yes
***ment14 APAC
MOSFET,NN CH,DIODE,40V,8A,8-SOIC; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:8A; Drain Source Voltage Vds:40V; Module Configuration:Dual; On Resistance Rds(on):0.013ohm; Power Dissipation Pd:2W
***et
Transistor MOSFET Array Dual N-CH 40V 8A 8-Pin SOIC T/R
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Dual N-Channel 40 V 0.016 O 85 nC Surface Mount Mosfet - SOIC-8
***essParts.Net
VISHAY SI4904DY-T1-E3 / MOSFET N-CH DUAL 40V 8A 8-SOICVISHA
***ark
Dual N Channel Mosfet, 40V, Soic, Full Reel; Transistor Polarity:n Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:8A; On Resistance Rds(On):0.019Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:16Vrohs Compliant: No
Parte # Mfg. Descrizione Azione Prezzo
PD20015-E
DISTI # 497-8802-5-ND		STMicroelectronicsTRANS RF PWR N-CH POWERSO-10RF
RoHS: Compliant
Min Qty: 1
Container: Tube		387In Stock
  • 500:$16.7532
  • 100:$18.4528
  • 50:$20.6380
  • 1:$23.4300
PD20015-E
DISTI # PD20015-E		STMicroelectronicsTrans MOSFET N-CH 40V 7A 3-Pin PowerSO-10RF (Formed lead) Tube (Alt: PD20015-E)
RoHS: Compliant
Min Qty: 400
Container: Tube		Asia - 0
  • 400:$18.9300
  • 800:$18.0286
  • 1200:$17.2091
  • 2000:$16.4609
  • 4000:$15.7750
  • 10000:$15.3486
  • 20000:$14.9447
PD20015-E
DISTI # PD20015-E		STMicroelectronicsTrans MOSFET N-CH 40V 7A 3-Pin PowerSO-10RF (Formed lead) Tube - Bag (Alt: PD20015-E)
RoHS: Compliant
Min Qty: 400
Container: Bag		Americas - 0
  • 400:$18.1900
  • 800:$17.2900
  • 1600:$16.4900
  • 2400:$15.7900
  • 4000:$15.4900
PD20015-E
DISTI # 45AC7467		STMicroelectronicsTrans MOSFET N-CH 40V 7A 3-Pin PowerSO-10RF (Formed lead) Tube - Bulk (Alt: 45AC7467)
RoHS: Compliant
Min Qty: 1
Container: Bulk		Americas - 0
  • 1:$23.4300
  • 5:$23.1900
  • 10:$21.6100
  • 25:$20.6400
  • 50:$19.5500
  • 100:$18.4600
  • 250:$17.6100
PD20015-E
DISTI # 45AC7467		STMicroelectronicsRF TRANSISTOR, 40V, 2GHZ, POWERSO-10RF,Drain Source Voltage Vds:40V,Continuous Drain Current Id:7A,Power Dissipation Pd:79W,Operating Frequency Min:-,Operating Frequency Max:2GHz,RF Transistor Case:PowerSO-10RF,Product Range:-RoHS Compliant: Yes100
  • 1:$23.4300
  • 5:$23.1900
  • 10:$21.6100
  • 25:$20.6400
  • 50:$19.5500
  • 100:$18.4600
  • 250:$17.6100
PD20015-E
DISTI # 511-PD20015-E		STMicroelectronicsRF MOSFET Transistors N-Ch, 13.6V 15W LDMOST family
RoHS: Compliant		351
  • 1:$23.4300
  • 5:$23.1900
  • 10:$21.6100
  • 25:$20.6400
  • 100:$18.4600
  • 250:$17.6100
PD20015-E
DISTI # PD20015-E		STMicroelectronicsRF POWER TRANSISTOR
RoHS: Compliant		0
  • 400:$17.6100
  • 500:$16.6800
  • 1000:$15.8300
PD20015-E
DISTI # 2807338		STMicroelectronicsRF TRANSISTOR, 40V, 2GHZ, POWERSO-10RF
RoHS: Compliant		169
  • 1:$37.3500
  • 50:$32.9000
  • 100:$29.4200
  • 500:$26.7100
PD20015-E
DISTI # 2807338		STMicroelectronicsRF TRANSISTOR, 40V, 2GHZ, POWERSO-10RF
RoHS: Compliant		169
  • 1:£18.0600
  • 5:£17.8700
  • 10:£15.9000
  • 50:£15.0600
  • 100:£14.2200
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 Power Management IC Development Tools LMG1020EVM-006
PD85015-E

Mfr.#: PD85015-E

OMO.#: OMO-PD85015-E-STMICROELECTRONICS

 RF MOSFET Transistors POWER R.F. N-Ch Trans
CRCW08050000Z0EAC

Mfr.#: CRCW08050000Z0EAC

OMO.#: OMO-CRCW08050000Z0EAC-VISHAY-DALE

 D12/CRCW0805-C 0R0 ET1 E3
CC0603GPNPO9BN101

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OMO.#: OMO-CC0603GPNPO9BN101-1105

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 100pF 50V NPO 2%
LMG1020EVM-006

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Disponibilità
Azione:
252
Su ordine:
2235
Inserisci la quantità:
Il prezzo attuale di PD20015-E è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
23,43 USD
23,43 USD
5
23,19 USD
115,95 USD
10
21,61 USD
216,10 USD
25
20,64 USD
516,00 USD
100
18,46 USD
1 846,00 USD
250
17,61 USD
4 402,50 USD
500
16,76 USD
8 380,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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