STGWT20H65FB

STGWT20H65FB
Mfr. #:
STGWT20H65FB
Produttore:
STMicroelectronics
Descrizione:
IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 20 A high speed
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
STGWT20H65FB Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
STGWT20H65FB maggiori informazioni STGWT20H65FB Product Details
Attributo del prodotto
Valore attributo
Produttore:
STMicroelectronics
Categoria di prodotto:
Transistor IGBT
RoHS:
Y
Tecnologia:
si
Pacchetto/custodia:
TO-3P
Stile di montaggio:
Foro passante
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
650 V
Tensione di saturazione collettore-emettitore:
1.55 V
Tensione massima dell'emettitore di gate:
20 V
Corrente continua del collettore a 25 C:
40 A
Pd - Dissipazione di potenza:
168 W
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 175 C
Serie:
STGWT20H65FB
Confezione:
Tubo
Corrente continua del collettore Ic Max:
20 A
Marca:
STMicroelectronics
Corrente di dispersione gate-emettitore:
250 nA
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
300
sottocategoria:
IGBT
Unità di peso:
0.238311 oz
Tags
STGWT20H, STGWT20, STGWT2, STGWT, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans IGBT Chip N-CH 650V 40A 3-Pin TO-3P Tube
***i-Key
IGBT 650V 40A 168W TO3P
***ark
Igbt, Single, 650V, 40A, To-3P; Dc Collector Current:40A; Collector Emitter Saturation Voltage Vce(On):1.55V; Power Dissipation Pd:168W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-3P; No. Of Pins:3Pins; Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. IGBT, SINGLE, 650V, 40A, TO-3P; DC Collector Current:40A; Collector Emitter Saturation Voltage Vce(on):1.55V; Power Dissipation Pd:168W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-3P; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:HB Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jan-2018)
***nell
IGBT, SINGOLO, 650V, 40A, TO-3P; Corrente di Collettore CC:40A; Tensione Saturaz Collettore-Emettitore Vce(on):1.55V; Dissipazione di Potenza Pd:168W; Tensione Collettore-Emettitore V(br)ceo:650V; Modello Case Transistor:TO-3P; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:HB Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2018)
IGBT HB/HB2 Series
STMicroelectronics IGBT HB/HB2 Series IGBTs combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary trench gate field-stop (TGFS) structure.
Parte # Mfg. Descrizione Azione Prezzo
STGWT20H65FB
DISTI # 497-15139-5-ND
STMicroelectronicsIGBT 650V 40A 168W TO3P
RoHS: Compliant
Min Qty: 1
Container: Tube
289In Stock
  • 1020:$2.1021
  • 510:$2.4925
  • 120:$2.9279
  • 30:$3.3783
  • 1:$3.9800
STGWT20H65FB
DISTI # STGWT20H65FB
STMicroelectronicsTrans IGBT Chip N-CH 650V 40A 3-Pin TO-3P Tube (Alt: STGWT20H65FB)
RoHS: Compliant
Min Qty: 30
Container: Tube
Europe - 300
  • 30:€1.6900
  • 60:€1.3900
  • 120:€1.2900
  • 180:€1.1900
  • 300:€1.0900
STGWT20H65FB
DISTI # STGWT20H65FB
STMicroelectronicsTrans IGBT Chip N-CH 650V 40A 3-Pin TO-3P Tube - Rail/Tube (Alt: STGWT20H65FB)
RoHS: Compliant
Min Qty: 600
Container: Tube
Americas - 0
  • 600:$2.0900
  • 1200:$1.9900
  • 1800:$1.8900
  • 3000:$1.7900
  • 6000:$1.7900
STGWT20H65FB
DISTI # 61AC2100
STMicroelectronicsIGBT, SINGLE, 650V, 40A, TO-3P,DC Collector Current:40A,Collector Emitter Saturation Voltage Vce(on):1.55V,Power Dissipation Pd:168W,Collector Emitter Voltage V(br)ceo:650V,Transistor Case Style:TO-3P,No. of Pins:3Pins,RoHS Compliant: Yes300
  • 5000:$1.2700
  • 2500:$1.3100
  • 1000:$1.6100
  • 500:$1.8000
  • 100:$1.9500
  • 10:$2.4300
  • 1:$2.8600
STGWT20H65FB
DISTI # 511-STGWT20H65FB
STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 20 A high speed
RoHS: Compliant
0
  • 600:$2.6500
STGWT20H65FBSTMicroelectronics 300
    STGWT20H65FB
    DISTI # 2889927
    STMicroelectronicsIGBT, SINGLE, 650V, 40A, TO-3P
    RoHS: Compliant
    300
    • 1020:$3.3600
    • 510:$3.9800
    • 120:$4.6700
    • 30:$5.3900
    • 1:$6.3500
    STGWT20H65FB
    DISTI # 2889927
    STMicroelectronicsIGBT, SINGLE, 650V, 40A, TO-3P
    RoHS: Compliant
    300
    • 500:£1.9500
    • 250:£2.1200
    • 100:£2.2900
    • 10:£2.6400
    • 1:£3.4800
    Immagine Parte # Descrizione
    STGWT20HP65FB

    Mfr.#: STGWT20HP65FB

    OMO.#: OMO-STGWT20HP65FB

    IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 20 A high speed
    STGWT20IH125DF

    Mfr.#: STGWT20IH125DF

    OMO.#: OMO-STGWT20IH125DF

    IGBT Transistors 1250V 20A trench gte field-stop IGBT
    STGWT20V60DF

    Mfr.#: STGWT20V60DF

    OMO.#: OMO-STGWT20V60DF

    IGBT Transistors 600V 20A High Speed Trench Gate IGBT
    STGWT20H65FB

    Mfr.#: STGWT20H65FB

    OMO.#: OMO-STGWT20H65FB

    IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 20 A high speed
    STGWT20V60F

    Mfr.#: STGWT20V60F

    OMO.#: OMO-STGWT20V60F

    IGBT Transistors 600V 20A Hi Spd TrenchGate FieldStop
    STGWT20IH125DF

    Mfr.#: STGWT20IH125DF

    OMO.#: OMO-STGWT20IH125DF-STMICROELECTRONICS

    IGBT Transistors 1250V 20A trench gte field-stop IGBT
    STGWT20V60DF

    Mfr.#: STGWT20V60DF

    OMO.#: OMO-STGWT20V60DF-STMICROELECTRONICS

    IGBT Transistors 600V 20A High Speed Trench Gate IGBT
    STGWT28IH125DF

    Mfr.#: STGWT28IH125DF

    OMO.#: OMO-STGWT28IH125DF-STMICROELECTRONICS

    IGBT Transistors 1250V 25A trench gte field-stop IGBT
    STGWT20V60F

    Mfr.#: STGWT20V60F

    OMO.#: OMO-STGWT20V60F-STMICROELECTRONICS

    IGBT Transistors 600V 20A Hi Spd TrenchGate FieldStop
    STGWT28IH120DF

    Mfr.#: STGWT28IH120DF

    OMO.#: OMO-STGWT28IH120DF-1190

    Nuovo e originale
    Disponibilità
    Azione:
    600
    Su ordine:
    2583
    Inserisci la quantità:
    Il prezzo attuale di STGWT20H65FB è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    3,78 USD
    3,78 USD
    10
    3,21 USD
    32,10 USD
    100
    2,78 USD
    278,00 USD
    250
    2,64 USD
    660,00 USD
    500
    2,37 USD
    1 185,00 USD
    1000
    2,00 USD
    2 000,00 USD
    2500
    1,90 USD
    4 750,00 USD
    5000
    1,83 USD
    9 150,00 USD
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