DS1230WP-100IND

DS1230WP-100IND
Mfr. #:
DS1230WP-100IND
Produttore:
Rochester Electronics, LLC
Descrizione:
NVRAM 3.3V 256k Nonvolatile SRAM
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
DS1230WP-100IND Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Tags
DS1230WP-10, DS1230WP, DS1230W, DS1230, DS123, DS12, DS1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    V***y
    V***y
    RU

    GOOD diodes

    2019-04-10
    E**p
    E**p
    LK

    good

    2019-09-03
    M***u
    M***u
    IL

    ok

    2019-08-04
    M***R
    M***R
    FR

    Looks good. 4 weeks to France. Some flux left after welding.

    2019-09-22
Parte # Mfg. Descrizione Azione Prezzo
DS1230WP-100IND
DISTI # DS1230WP-100IND
Maxim Integrated Products- Bulk (Alt: DS1230WP-100IND)
RoHS: Not Compliant
Min Qty: 22
Container: Bulk
Americas - 0
    DS1230WP-100INDMaxim Integrated ProductsNon-Volatile SRAM Module, 256KX8, 100ns, CMOS
    RoHS: Not Compliant
    15
    • 1000:$15.0700
    • 500:$15.8700
    • 100:$16.5200
    • 25:$17.2300
    • 1:$18.5500
    Immagine Parte # Descrizione
    DS1230WP-150+

    Mfr.#: DS1230WP-150+

    OMO.#: OMO-DS1230WP-150-

    NVRAM 3.3V 256k Nonvolatile SRAM
    DS1230W-100IND+

    Mfr.#: DS1230W-100IND+

    OMO.#: OMO-DS1230W-100IND-

    NVRAM 3.3V 256k Nonvolatile SRAM
    DS1230WP-100+

    Mfr.#: DS1230WP-100+

    OMO.#: OMO-DS1230WP-100-

    NVRAM 3.3V 256k Nonvolatile SRAM
    DS1230W-100IND

    Mfr.#: DS1230W-100IND

    OMO.#: OMO-DS1230W-100IND

    NVRAM 3.3V 256k Nonvolatile SRAM
    DS1230W-100IND

    Mfr.#: DS1230W-100IND

    OMO.#: OMO-DS1230W-100IND-241

    IC NVSRAM 256K PARALLEL 28EDIP
    DS1230W-150

    Mfr.#: DS1230W-150

    OMO.#: OMO-DS1230W-150-241

    IC NVSRAM 256K PARALLEL 28EDIP
    DS1230W-150IND

    Mfr.#: DS1230W-150IND

    OMO.#: OMO-DS1230W-150IND-1190

    Nuovo e originale
    DS1230WP-150

    Mfr.#: DS1230WP-150

    OMO.#: OMO-DS1230WP-150-241

    IC NVSRAM 256K PARALLEL 34PWRCAP
    DS1230W-100+

    Mfr.#: DS1230W-100+

    OMO.#: OMO-DS1230W-100--MAXIM-INTEGRATED

    NVRAM 3.3V 256k Nonvolatile SRAM
    DS1230W-100IND+

    Mfr.#: DS1230W-100IND+

    OMO.#: OMO-DS1230W-100IND--MAXIM-INTEGRATED

    IC NVSRAM 256K PARALLEL 28EDIP
    Disponibilità
    Azione:
    Available
    Su ordine:
    2000
    Inserisci la quantità:
    Il prezzo attuale di DS1230WP-100IND è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    22,60 USD
    22,60 USD
    10
    21,47 USD
    214,75 USD
    100
    20,34 USD
    2 034,45 USD
    500
    19,21 USD
    9 607,15 USD
    1000
    18,08 USD
    18 084,00 USD
    Iniziare con
    Prodotti più recenti
    • IO-Link™ Devices
      Maxim Integrated’s complete portfolio of IO-link devices integrate value-adding features to provide design flexibility and offload the local processor.
    • Large Diameter Clear Hole Spacers
      RAF's large diameter clear hole spacers for industrial applications are available in standard stock sizes, various materials and finishes, and custom options.
    • WE-ExB Series Common Mode Power Line Choke
      Wurth's WE-ExB series is the double core made of MnZn and NiZn. Its insertion loss has a range of effect over a broader frequency range than does a single NiZn or MnZn core.
    • CPI2-B1-REU Production Device Programmer
      Phyton's CPI2-B1-REU in-system programmer supports Renesas microcontrollers, memory devices, and MCUs from other manufacturers.
    • CFSH05-20L Schottky Diode
      Central Semiconductor's space saving, low profile Schottky diode for applications including DC-DC conversion and circuit protection.
    Top