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FGA6560WDF

FGA6560WDF
Mfr. #:
FGA6560WDF
Produttore:
ON Semiconductor / Fairchild
Descrizione:
IGBT Transistors FS3TIGBT TO3PN 60A 650V
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FGA6560WDF Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
FGA6560WDF maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
Transistor IGBT
RoHS:
Y
Tecnologia:
si
Pacchetto/custodia:
TO-3PN
Stile di montaggio:
Foro passante
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
650 V
Tensione di saturazione collettore-emettitore:
1.8 V
Tensione massima dell'emettitore di gate:
30 V
Corrente continua del collettore a 25 C:
120 A
Pd - Dissipazione di potenza:
306 W
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 175 C
Serie:
FGA6560WDF
Confezione:
Tubo
Corrente continua del collettore Ic Max:
120 A
Marca:
ON Semiconductor / Fairchild
Corrente di dispersione gate-emettitore:
400 nA
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
450
sottocategoria:
IGBT
Unità di peso:
0.225789 oz
Tags
FGA656, FGA65, FGA6, FGA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N=-CH 650V 120A 306000mW 3-Pin(3+Tab) TO-3PN Rail
***emi
IGBT, 650 V, 60 A Field Stop Trench
***r Electronics
Insulated Gate Bipolar Transistor, 120A I(C), 650V V(BR)CES, N-Channel
*** Electronic Components
IGBT Transistors FS3TIGBT TO3PN 60A 650V
***nell
FAST & ULTRAFAST RECOVERY RECTIFIERS;
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s new series of field stop 3rd generation IGBTs offer the optimum performance for Welder applications where low conduction and switching losses are essential.
***icroelectronics
Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
***ical
Trans IGBT Chip N-CH 650V 120A 470000mW 3-Pin(3+Tab) TO-247 Tube
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 120A I(C), 650V V(BR)CES, N-Channel, TO-247
***ronik
IGBT 650V 80A 1,8V TO247 long D
*** Electronic Components
IGBT Transistors IGBT & Power Bipolar
***DA Technology Co., Ltd.
Product Description Demo for Development.
*** Source Electronics
Trans IGBT Chip N-CH 650V 120A 600000mW 3-Pin(3+Tab) TO-3P Tube / IGBT 650V 120A 600W TO3P
***-Wing Technology
In a Tube of 30, ON Semiconductor FGA60N65SMD IGBT, 120 A 650 V, 3-Pin TO-3PN
***nell
IGBT, 650V, 120A, TO-3PN; DC Collector Current: 120A; Collector Emitter Saturation Voltage Vce(on): 1.9V; Power Dissipation Pd: 600W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-3PN; No. of Pins: 3Pins;
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
***ical
Trans IGBT Chip N-CH 650V 85A 227000mW 3-Pin(3+Tab) TO-247 Tube
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 3.8pF 50volts C0G +/-0.1pF
***ark
Igbt, Single, 650V, 85A, To-247; Dc Collector Current:85A; Collector Emitter Saturation Voltage Vce(On):1.05V; Power Dissipation Pd:227W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:To-247; No. Of Pins:3Pins; Rohs Compliant: Yes |Infineon IKW30N65EL5XKSA1
***ineon SCT
Infineon’s new L5 low saturation voltage (V CE(sat)) TRENCHSTOP™ IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz, PG-TO247-3, RoHS
***ineon
Infineons new L5 low saturation voltage (V CE(sat)) TRENCHSTOP IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. Optimization of the carrier profile of the innovative 55m TRENCHSTOP 5 thin wafer technology allows to reduce conduction losses to the intrinsically low level 1.05V for 30A IGBT and 1.10V for 75A IGBT. | Summary of Features: Lowest saturation voltage V CE(sat) of only 1.05V; Low switching losses of 1.6mJ @ 25C for 30A IGBT; High thermal stability of electrical parameters - only 2% drift with T j increase from 25C to 175C; Enhanced efficiency for 20% lower switching losses in TO-247 4pin Kelvin-Emitter package | Benefits: Higher efficiency for 50Hz; Longer lifetime and higher reliability of IGBT; High design reliability due to stable thermal performance | Target Applications: UPS; Solar; Welding
***ical
Trans IGBT Chip N-CH 650V 100A 595000mW 3-Pin(3+Tab) TO-247 Tube
***ment14 APAC
TRANSISTOR, IGBT, 1.75KV, 100A, TO-247
***i-Key
IGBT TRENCH/FS 650V 100A TO247
***r Electronics
Insulated Gate Bipolar Transistor
***nell
TRANSISTOR, IGBT, 1.75KV, 100A, TO-247; DC Collector Current: 100A; Collector Emitter Saturation Voltage Vce(on): 1.75V; Power Dissipation Pd: 595W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No.
***ical
Trans IGBT Chip N-CH 650V 100A 417000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
650 V 100 A Through Hole Insulated Gate Bipolar Transistor (IGBT) - TO-247-3
***r Electronics
Insulated Gate Bipolar Transistor, 100A I(C), 650V V(BR)CES, N-Channel
***i-Key
IGBT TRENCH/FS 650V 100A TO247-3
***DA Technology Co., Ltd.
Product Description Demo for Development.
***ical
Trans IGBT Chip N-CH 650V 85A 227000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
650V, 30A, TO-247-3 Low VCE(sat) IGBT in TRENCHSTOP 5 technology
***ark
Igbt, Single, 650V, 85A, To-247; Dc Collector Current:85A; Collector Emitter Saturation Voltage Vce(On):1.05V; Power Dissipation Pd:227W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:To-247; No. Of Pins:3Pins; Rohs Compliant: Yes |Infineon IGW30N65L5XKSA1
***ineon SCT
Infineon’s new L5 low saturation voltage (V CE(sat)) TRENCHSTOP™ IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz, PG-TO247-3, RoHS
***ineon
Infineons new L5 low saturation voltage (V CE(sat)) TRENCHSTOP IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. Optimization of the carrier profile of the innovative 55m TRENCHSTOP 5 thin wafer technology allows to reduce conduction losses to the intrinsically low level 1.05V for 30A IGBT and 1.10V for 75A IGBT. | Summary of Features: Lowest saturation voltage V CE(sat) of only 1.05V; Low switching losses of 1.6mJ @ 25C for 30A IGBT; High thermal stability of electrical parameters - only 2% drift with T j increase from 25C to 175C; Enhanced efficiency for 20% lower switching losses in TO-247 4pin Kelvin-Emitter package | Benefits: Higher efficiency for 50Hz; Longer lifetime and higher reliability of IGBT; High design reliability due to stable thermal performance | Target Applications: UPS; Solar; Welding
Field Stop IGBTs
ON Semiconductor Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. These IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.
FGA6560WDF 650V 60A Field Stop Trench IGBT
ON Semiconductor FGA6560 650V 60A Field Stop Trench IGBT uses novel field stop IGBT technology. This IGBT features high current capability, low saturation voltage, high input impedance, and fast switching. The FGA6560 IGBT offers the optimum performance for welder applications that require low conduction and switching losses.
FGAFx0N60 Field Stop IGBTs
ON Semiconductor FGAFx0N60 650V Field Stop IGBTs use a novel field stop IGBT technology. These IGBTs feature high current capability, low saturation voltage, high input impedance, and fast switching. The FGAFx0N60 IGBTs offer the optimum performance for solar inverters, UPS, welder, and PFC applications that require low conduction and switching losses.
Parte # Mfg. Descrizione Azione Prezzo
FGA6560WDF
DISTI # V99:2348_06359255		ON SemiconductorTrans IGBT Chip N-CH 650V 120A 306000mW 3-Pin(3+Tab) TO-3PN Rail406
  • 250:$3.5920
  • 100:$3.7590
  • 10:$4.2320
  • 1:$4.8190
FGA6560WDF
DISTI # FGA6560WDF-ND		ON SemiconductorIGBT 650V 120A 306W TO-3PN
RoHS: Compliant
Min Qty: 1
Container: Tube		383In Stock
  • 1350:$3.0650
  • 900:$3.6342
  • 450:$4.0501
  • 10:$5.2100
  • 1:$5.8000
FGA6560WDF
DISTI # 25845326		ON SemiconductorTrans IGBT Chip N-CH 650V 120A 306000mW 3-Pin(3+Tab) TO-3PN Rail406
  • 250:$3.5920
  • 100:$3.7590
  • 10:$4.2320
  • 3:$4.8190
FGA6560WDF
DISTI # FGA6560WDF		ON SemiconductorTrans IGBT Chip N-CH 650V 120A 3-Pin TO-3PN Tube - Rail/Tube (Alt: FGA6560WDF)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 450:$2.6900
  • 900:$2.6900
  • 1800:$2.5900
  • 2700:$2.5900
  • 4500:$2.4900
FGA6560WDF
DISTI # 512-FGA6560WDF		ON SemiconductorIGBT Transistors FS3TIGBT TO3PN 60A 650V
RoHS: Compliant		49
  • 1:$5.5200
  • 10:$4.7000
  • 100:$4.0700
  • 250:$3.8600
FGA6560WDFFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor
RoHS: Compliant		31380
  • 1000:$3.4100
  • 500:$3.5900
  • 100:$3.7400
  • 25:$3.9000
  • 1:$4.2000
FGA6560WDF
DISTI # C1S541901510156		ON SemiconductorTrans IGBT Chip N-CH 650V 120A 306000mW 3-Pin(3+Tab) TO-3PN Tube
RoHS: Compliant		406
  • 250:$3.5920
  • 100:$3.7590
  • 1:$4.8190
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Disponibilità
Azione:
Available
Su ordine:
1986
Inserisci la quantità:
Il prezzo attuale di FGA6560WDF è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
5,51 USD
5,51 USD
10
4,69 USD
46,90 USD
100
4,06 USD
406,00 USD
250
3,85 USD
962,50 USD
500
3,46 USD
1 730,00 USD
1000
2,91 USD
2 910,00 USD
2500
2,77 USD
6 925,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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