IPB65R125C7ATMA1

Mfr. #:: IPB65R125C7ATMA1
Produttore:: Infineon Technologies
Descrizione:: RF Bipolar Transistors MOSFET N-Ch 700V 75A D2PAK-2
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: IPB65R125C7ATMA1 Scheda dati
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Attributo del prodotto
Valore attributo

Produttore: Tecnologie Infineon

categoria di prodotto: Transistor - FET, MOSFET - Singoli

Confezione: Bobina

Alias parziali: IPB65R125C7 SP001080134

Unità di peso: 0.068654 oz

Nome depositato: CoolMOS

Pacchetto-Custodia: TO-263-3

Tecnologia: si

Numero di canali: 1 Channel

Tipo a transistor: 1 N-Channel

Id-Continuo-Scarico-Corrente: 75 A

Vds-Drain-Source-Breakdown-Voltage: 700 V

Rds-On-Drain-Source-Resistenza: 125 mOhms

Polarità del transistor: Canale N

Tags: IPB65R12, IPB65R1, IPB65, IPB6, IPB

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
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Step3:
Packaging Boxes

IPB65R125C7ATMA1 Descrizione

***ure Electronics: IPB65R125C7 Series 650 V 18 A CoolMOS C7 Power Transistor - TO-263-3, D²Pak)

***ical: Trans MOSFET N-CH 650V 18A 3-Pin(2+Tab) D2PAK T/R

*** Stop Electro: Power Field-Effect Transistor, 18A I(D), 650V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ineon SCT: Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range, PG-TO263-3, RoHS

***ineon: Infineons new CoolMOS C7 series is a revolutionary step forward in technology, providing the worldss lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. | Summary of Features: 650V voltage; Revolutionary best-in-class R DS(on)/package; Reduced energy stored in output capacitance (Eoss); Lower gate charge Qg; Space saving through use of smaller packages or reduction of parts; 12 years manufacturing experience in superjunction technology | Benefits: Improved safety margin and suitable for both SMPS and solar inverter applications; Lowest conduction losses/package; Low switching losses; Better light load efficiency; Increasing power density; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; PC power

***ical: Trans MOSFET N-CH 500V 19A 3-Pin(2+Tab) D2PAK

*** Electronics: VISHAY SIHB20N50E-GE3 MOSFET, N CHANNEL, 500V, 19A, TO-263-3

***ure Electronics: MOSFET 500V Vds 30V Vgs D2PAK (TO-263)

***S: French Electronic Distributor since 1988

***nell: MOSFET, N CHANNEL, 500V, 19A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 19A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.16ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 179W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: E Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited

***ure Electronics: E Series N Channel 600 V 0.158 O 95 nC Surface Mount Power Mosfet - D2PAK

***ical: Trans MOSFET N-CH 600V 23A 3-Pin(2+Tab) D2PAK

***nell: MOSFET, N CH, 600V, 23A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 23A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.132ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Pow

***icroelectronics: N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFETs in D2PAK package

***ure Electronics: N-Channel 600 V 22 A 0.15 Ohm Surface Mount MDmesh II Plus Mosfet - D2PAK

***ical: Trans MOSFET N-CH 600V 22A 3-Pin(2+Tab) D2PAK T/R

***r Electronics: Power Field-Effect Transistor, 22A I(D), 600V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ure Electronics: E Series N-Channel 600 V 0.18 O 86 nC Surface Mount Power Mosfet - D2PAK

***ical: Trans MOSFET N-CH 600V 21A 3-Pin(2+Tab) D2PAK

*** Electronics: MOSFET 600V 180mOhm@10V 21A N-Ch E-SRS

***icroelectronics: N-channel 650 V, 0.160 Ohm typ., 18 A MDmesh M5 Power MOSFET in D2PAK package

***sible Micro: (CP22-1029) Transistor 650V N-Channel Mosfet D2PAK STB20N65M5

***ure Electronics: N-Channel 710 V 190 mO 36 nC Surface Mount Power Mosfet - TO-263 (D2PAK)

***ical: Trans MOSFET N-CH 650V 18A 3-Pin(2+Tab) D2PAK T/R

***r Electronics: Power Field-Effect Transistor, 18A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ical: Trans MOSFET N-CH 650V 13.8A 3-Pin(2+Tab) D2PAK T/R

***ineon SCT: CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO263-3, RoHS

***ineon: CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
IPB65R125C7ATMA1 DISTI # V72:2272_06378470	Infineon Technologies AG	Trans MOSFET N-CH 650V 18A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	900	75000:$2.1269 30000:$2.1890 15000:$2.2500 6000:$2.3110 3000:$2.3720 1000:$2.4340 500:$2.4950 250:$2.8030 100:$2.9840 50:$3.4750 25:$3.5100 10:$3.5450 1:$4.6310
IPB65R125C7ATMA1 DISTI # IPB65R125C7ATMA1-ND	Infineon Technologies AG	MOSFET N-CH TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Limited Supply - Call
IPB65R125C7ATMA1 DISTI # 31653208	Infineon Technologies AG	Trans MOSFET N-CH 650V 18A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	900	6000:$2.2349 3000:$2.2360 1000:$2.2371 500:$2.6821 250:$3.0132 100:$3.2078 50:$3.7356 25:$3.7732 10:$3.8109 4:$4.5258
IPB65R125C7ATMA1 DISTI # SP001080134	Infineon Technologies AG	Trans MOSFET N-CH 700V 18A 3-Pin D2PAK T/R (Alt: SP001080134) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0	10000:€1.6900 6000:€1.8900 4000:€1.9900 2000:€2.0900 1000:€2.1900
IPB65R125C7 DISTI # 726-IPB65R125C7	Infineon Technologies AG	MOSFET N-Ch 700V 75A D2PAK-2 RoHS: Compliant	823	1:$4.2300 10:$3.5900 100:$3.1200 250:$2.9600 500:$2.6500 1000:$2.2400 2000:$2.1200
IPB65R125C7ATMA1 DISTI # 726-IPB65R125C7ATMA1	Infineon Technologies AG	MOSFET N-Ch 700V 75A D2PAK-2 RoHS: Compliant	1000	1:$4.2300 10:$3.5900 100:$3.1200 250:$2.9600 500:$2.6500 1000:$2.2400 2000:$2.1200

Prodotti correlati

Immagine

Parte #

Descrizione

Mfr.#: IPB65R125C7ATMA2

OMO.#: OMO-IPB65R125C7ATMA2-INFINEON-TECHNOLOGIES

MOSFET N-CH TO263-3

Mfr.#: IPB65R125C7

OMO.#: OMO-IPB65R125C7-1190

MOSFET N-Ch 700V 75A D2PAK-2

Mfr.#: IPB65R125C7ATMA1

OMO.#: OMO-IPB65R125C7ATMA1-INFINEON-TECHNOLOGIES

RF Bipolar Transistors MOSFET N-Ch 700V 75A D2PAK-2

Disponibilità

Azione:: Available
Su ordine:: 2000
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Il prezzo attuale di IPB65R125C7ATMA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~2,88 USD~~; ~~2,88 USD~~

10: ~~2,74 USD~~; ~~27,37 USD~~

100: ~~2,59 USD~~; ~~259,26 USD~~

500: ~~2,45 USD~~; ~~1 224,30 USD~~

1000: ~~2,30 USD~~; ~~2 304,50 USD~~

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IPB65R125C7ATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes