IRGB10B60KDPBF

IRGB10B60KDPBF
Mfr. #:
IRGB10B60KDPBF
Produttore:
Infineon Technologies
Descrizione:
IGBT Transistors 600V UltraFast 10-30kHz
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IRGB10B60KDPBF Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRGB10B60KDPBF DatasheetIRGB10B60KDPBF Datasheet (P4-P6)IRGB10B60KDPBF Datasheet (P7-P9)IRGB10B60KDPBF Datasheet (P10-P12)IRGB10B60KDPBF Datasheet (P13-P15)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
Transistor IGBT
RoHS:
Y
Tecnologia:
si
Pacchetto/custodia:
TO-220-3
Stile di montaggio:
Foro passante
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
600 V
Tensione di saturazione collettore-emettitore:
1.8 V
Tensione massima dell'emettitore di gate:
20 V
Corrente continua del collettore a 25 C:
35 A
Pd - Dissipazione di potenza:
156 W
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Confezione:
Tubo
Corrente continua del collettore Ic Max:
35 A
Altezza:
8.77 mm
Lunghezza:
10.54 mm
Larghezza:
4.69 mm
Marca:
Tecnologie Infineon
Corrente di dispersione gate-emettitore:
100 nA
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
1000
sottocategoria:
IGBT
Parte # Alias:
SP001542270
Unità di peso:
0.211644 oz
Tags
IRGB10, IRGB1, IRGB, IRG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon
Target Applications: Air Conditioner; Dryer; Fan; Pump; Solar; UPS; Washing Machine; Welding
***ernational Rectifier
600V UltraFast 10-30 kHz Copack IGBT in a TO-220AB package
***ure Electronics
IRGB10B60 Series 600 V 22 A 156 W Insulated Gate Bipolar Transistor - TO-220AB
***ied Electronics & Automation
600V ULTRAFAST 10-30 KHZ COPACK IGBT IN A TO-220AB PACKAGE
***ical
Trans IGBT Chip N-CH 600V 22A 3-Pin(3+Tab) TO-220AB
***i-Key
IGBT W/DIODE 600V 22A TO-220AB
***ark
IGBT, 600V, 22A, TO-220; Transistor Type:IGBT; Transistor Polarity:N Channel; Voltage, Vces:600V; Current, Ic Continuous a Max:22A; Voltage, Vce Sat Max:2.2V; Power Dissipation:104W; Case Style:TO-220AB; Termination Type:Through ;RoHS Compliant: Yes
***nell
IGBT, 600V, 22A, TO-220; Transistor Type:IGBT; Transistor Polarity:N Channel; Voltage, Vces:600V; Current Ic Continuous a Max:22A; Voltage, Vce Sat Max:2.2V; Power Dissipation:104W; Case Style:TO-220AB; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:44A; Power, Pd:104W; Time, Fall:32ns; Time, Fall Max:32ns; Time, Rise:20ns
***ment14 APAC
IGBT, 600V, 22A, TO-220; Transistor Type:IGBT; DC Collector Current:22A; Collector Emitter Voltage Vces:2.2V; Power Dissipation Pd:104W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:22A; Fall Time Max:32ns; Fall Time tf:32ns; Package / Case:TO-220AB; Power Dissipation Max:156W; Power Dissipation Pd:104W; Power Dissipation Pd:104W; Pulsed Current Icm:44A; Rise Time:20ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
Parte # Mfg. Descrizione Azione Prezzo
IRGB10B60KDPBF
DISTI # IRGB10B60KDPBF-ND
Infineon Technologies AGIGBT 600V 22A 156W TO220AB
RoHS: Compliant
Min Qty: 1000
Container: Tube
Limited Supply - Call
  • 1000:$1.8318
IRGB10B60KDPBF
DISTI # IRGB10B60KDPBF
Infineon Technologies AGTrans IGBT Chip N-CH 600V 22A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRGB10B60KDPBF)
RoHS: Compliant
Min Qty: 1000
Container: Tube
Americas - 0
  • 10000:$1.4900
  • 4000:$1.5900
  • 6000:$1.5900
  • 1000:$1.6900
  • 2000:$1.6900
IRGB10B60KDPBF
DISTI # IRGB10B60KDPBF
Infineon Technologies AGTrans IGBT Chip N-CH 600V 22A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: IRGB10B60KDPBF)
Min Qty: 234
Container: Bulk
Americas - 0
  • 1170:$1.2900
  • 2340:$1.2900
  • 468:$1.3900
  • 702:$1.3900
  • 234:$1.4900
IRGB10B60KDPBF
DISTI # 63J7437
Infineon Technologies AGTrans IGBT Chip N-CH 600V 22A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: 63J7437)
RoHS: Compliant
Min Qty: 1
Container: Bulk
Americas - 0
    IRGB10B60KDPBF
    DISTI # SP001542270
    Infineon Technologies AGTrans IGBT Chip N-CH 600V 22A 3-Pin(3+Tab) TO-220AB (Alt: SP001542270)
    RoHS: Compliant
    Min Qty: 1
    Europe - 0
    • 1000:€1.2900
    • 100:€1.3900
    • 500:€1.3900
    • 25:€1.4900
    • 50:€1.4900
    • 10:€1.6900
    • 1:€1.8900
    IRGB10B60KDPBF
    DISTI # 63J7437
    Infineon Technologies AGSINGLE IGBT, 600V, 22A,DC Collector Current:22A,Collector Emitter Saturation Voltage Vce(on):2.2V,Power Dissipation Pd:156W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes5
    • 500:$1.7700
    • 250:$1.8200
    • 100:$2.1700
    • 50:$2.5100
    • 25:$2.6700
    • 10:$3.0500
    • 1:$3.5300
    IRGB10B60KDPBF
    DISTI # 70017214
    Infineon Technologies AG600V Ultrafast 10-30 kHz COPACK IGBT IN A TO-220AB Package
    RoHS: Compliant
    405
    • 1:$3.6500
    • 2:$3.5770
    • 5:$3.4680
    • 10:$3.3220
    • 25:$3.1030
    IRGB10B60KDPBF
    DISTI # 942-IRGB10B60KDPBF
    Infineon Technologies AGIGBT Transistors 600V UltraFast 10-30kHz
    RoHS: Compliant
    116
    • 1:$2.8500
    • 10:$2.4200
    • 100:$2.1000
    • 250:$1.9900
    • 500:$1.7900
    • 1000:$1.5100
    IRGB10B60KDPBFInfineon Technologies AGInsulated Gate Bipolar Transistor, 22A I(C), 600V V(BR)CES, N-Channel, TO-220AB
    RoHS: Compliant
    2
    • 1000:$1.4100
    • 500:$1.4800
    • 100:$1.5400
    • 25:$1.6100
    • 1:$1.7300
    IRGB10B60KDPBFInternational RectifierInsulated Gate Bipolar Transistor, 22A I(C), 600V V(BR)CES, N-Channel, TO-220AB
    RoHS: Compliant
    3620
    • 1000:$1.4100
    • 500:$1.4800
    • 100:$1.5400
    • 25:$1.6100
    • 1:$1.7300
    IRGB10B60KDPBF
    DISTI # 8659567
    Infineon Technologies AGIGBT, 600V, 22A, TO-220
    RoHS: Compliant
    0
    • 500:$2.7600
    • 250:$3.0600
    • 100:$3.2300
    • 10:$3.7300
    • 1:$4.3800
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    IGBT Transistors 600V UltraFast 10-30kHz
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    OMO.#: OMO-LM358LVIDR-TEXAS-INSTRUMENTS

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    Mfr.#: L6385E

    OMO.#: OMO-L6385E-STMICROELECTRONICS

    Gate Drivers HV H-Bridge drive
    0031.8273

    Mfr.#: 0031.8273

    OMO.#: OMO-0031-8273-SCHURTER

    Fuse Holder OGN-SMD FUSEHOLDER 5X20
    Disponibilità
    Azione:
    Available
    Su ordine:
    1500
    Inserisci la quantità:
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