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FP35R12U1T4

FP35R12U1T4
Mfr. #:
FP35R12U1T4
Produttore:
Infineon Technologies
Descrizione:
IGBT Modules IGBT Module 35A 1200V
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FP35R12U1T4 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
FP35R12U1T4 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
Moduli IGBT
RoHS:
Y
Prodotto:
Moduli di silicio IGBT
Configurazione:
PIM 3-Phase Input Rectifier
Tensione collettore-emettitore VCEO Max:
1200 V
Tensione di saturazione collettore-emettitore:
1.85 V
Corrente continua del collettore a 25 C:
54 A
Corrente di dispersione gate-emettitore:
400 nA
Pd - Dissipazione di potenza:
250 W
Pacchetto/custodia:
SmartPIM1
Temperatura di esercizio minima:
- 40 C
Temperatura massima di esercizio:
+ 150 C
Confezione:
Vassoio
Marca:
Tecnologie Infineon
Stile di montaggio:
Montaggio su telaio
Tensione massima dell'emettitore di gate:
20 V
Tipologia di prodotto:
Moduli IGBT
Quantità confezione di fabbrica:
30
sottocategoria:
IGBT
Parte # Alias:
FP35R12U1T4BPSA1 SP000663678
Tags
FP35R, FP35, FP3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
SmartPIM 1 IGBT Module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and PressFIT/NTC
***ment14 APAC
IGBT, LOW POWER NTC, 1200V, 35A, PIM; Transistor Polarity:N Channel; DC Collector Current:35A; Collector Emitter Voltage Vces:1.85V; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:Module; No. of Pins:23; Power Dissipation Max:250W
***ineon
1200V SmartPIM 1 IGBT module with fast Trench/Fieldstop IGBT4, Emitter Controlled 4 diode, NTC and PressFIT Contact Technology | Summary of Features: Low Switching Losses; Trench IGBT 4; T(vj io) = 150C; Low V(cesat); AI(2)O(3) Substrate for Low Thermal Resistance; Rugged Duplex frame construction; Self-acting PressFIT Assembly | Benefits: Safe and simple mounting process; Reduced assembly time; Reliable connection of module Pins and PCB; Flexible mounting possibilities | Target Applications: drives; aircon
Infineon SmartPIM & SmartPACK IGBTs
Infineon's SmartPIM & SmartPACK IGBTs are designed to fulfill the challenges for the inverter assembly and the reliability of the whole system. These devices come with a sophisticated mounting concept and combines the existing PressFIT contact with a very basic mounting and assembly technology of an inverter. The brand-new housing allows connecting the module with the heat sink and the PCB in a single step mounting process. In the Smart1 this easy mounting concept is realized by using one screw only. During this mounting process, the PressFIT pin is pressed into the PCB, the PCB is stabilized and the module is mounted in the same step on the surface of the heat sink. The whole mounting concept needs no additional tools; only an electrical screw driver is used. All well known electrical circuits are feasible. The possible current range in the housing reaches up to 75A.Learn More
Parte # Mfg. Descrizione Azione Prezzo
FP35R12U1T4BPSA1
DISTI # FP35R12U1T4BPSA1-ND		Infineon Technologies AGIGBT MODULE VCES 1200V 35A
RoHS: Not compliant
Min Qty: 30
Container: Bulk		Limited Supply - Call
  • 30:$76.9440
FP35R12U1T4
DISTI # SP000663678		Infineon Technologies AGSmartPIM 1 IGBT Module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and PressFIT/NTC (Alt: SP000663678)
RoHS: Compliant
Min Qty: 1		Europe - 14
  • 1:€95.4900
  • 10:€77.1900
  • 25:€70.1900
  • 50:€67.7900
  • 100:€65.5900
  • 500:€63.6900
  • 1000:€62.1900
FP35R12U1T4
DISTI # SP000663678		Infineon Technologies AGSmartPIM 1 IGBT Module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and PressFIT/NTC (Alt: SP000663678)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€81.4900
  • 10:€74.6900
  • 25:€71.6900
  • 50:€68.8900
  • 100:€66.3900
  • 500:€63.9900
  • 1000:€59.6900
FP35R12U1T4BPSA1
DISTI # FP35R12U1T4BPSA1		Infineon Technologies AGLOW POWER SMART - Trays (Alt: FP35R12U1T4BPSA1)
RoHS: Compliant
Min Qty: 30
Container: Tray		Americas - 0
  • 30:$75.9900
  • 32:$73.1900
  • 62:$70.5900
  • 150:$68.1900
  • 300:$66.9900
FP35R12U1T4
DISTI # 641-FP35R12U1T4		Infineon Technologies AGIGBT Modules IGBT Module 35A 1200V
RoHS: Compliant		0
  • 1:$84.4000
  • 5:$82.8500
  • 10:$79.1200
  • 25:$76.4800
  • 100:$71.2200
FP35R12U1T4
DISTI # XSKDRABV0032947		Infineon Technologies AG 
RoHS: Compliant		24 in Stock0 on Order
  • 24:$95.0000
  • 5:$101.7900
Immagine Parte # Descrizione
EYG-S0407ZLAL

Mfr.#: EYG-S0407ZLAL

OMO.#: OMO-EYG-S0407ZLAL

 Thermal Interface Products Soft PGS - IGBT Mod Infineon
Disponibilità
Azione:
Available
Su ordine:
2500
Inserisci la quantità:
Il prezzo attuale di FP35R12U1T4 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
84,40 USD
84,40 USD
5
82,85 USD
414,25 USD
10
79,12 USD
791,20 USD
25
76,48 USD
1 912,00 USD
100
71,22 USD
7 122,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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