IPT012N08N5ATMA1

Mfr. #:: IPT012N08N5ATMA1
Produttore:: Infineon Technologies
Descrizione:: MOSFET N-Ch 80V 300A HSOF-8
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: IPT012N08N5ATMA1 Scheda dati
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Attributo del prodotto
Valore attributo

Produttore: Tecnologie Infineon

categoria di prodotto: Transistor - FET, MOSFET - Singoli

Confezione: Bobina

Alias parziali: IPT012N08N5 SP001227054

Stile di montaggio: SMD/SMT

Pacchetto-Custodia: HSOF-8

Tecnologia: si

Numero di canali: 1 Channel

Configurazione: Separare

Tipo a transistor: 1 N-Channel

Pd-Power-Dissipazione: 375 W

Massima temperatura di esercizio: + 175 C

Temperatura di esercizio minima: - 55 C

Tempo di caduta: 30 ns

Ora di alzarsi: 31 ns

Vgs-Gate-Source-Voltage: +/- 20 V

Id-Continuo-Scarico-Corrente: 300 A

Vds-Drain-Source-Breakdown-Voltage: 80 V

Vgs-th-Gate-Sorgente-Soglia-Tensione: 2.2 V

Rds-On-Drain-Source-Resistenza: 1.7 mOhms

Polarità del transistor: Canale N

Tempo di ritardo allo spegnimento tipico: 82 ns

Tempo di ritardo all'accensione tipico: 35 ns

Qg-Gate-Carica: 178 nC

Transconduttanza diretta-Min: 120 S

Modalità canale: Aumento

Tags: IPT012N08, IPT012, IPT01, IPT0, IPT

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPT012N08N5ATMA1 Descrizione

*** Source Electronics: Trans MOSFET N-CH 80V 300A Automotive 9-Pin(8+Tab) HSOF T/R / N-channel, normal level

***ure Electronics: Single N-Channel 80 V 1.2 mOhm 178 nC OptiMOS Power Mosfet - HSOF-8-1

***ark: Mosfet, N-Ch, 80V, 300A, Pg-Hsof-8; Transistor Polarity:n Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:300A; On Resistance Rds(On):0.001Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes

***ineon: OptiMOS 5 80V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 80V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 44% | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter

IPT012N08N5ATMA1 Maggiori informazioni

OptiMOS™ 5 Power MOSFETs: Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.

Light Electric Vehicles (LEV): Infineon Light Electric Vehicles have world-changing potential utilizing the emission-free solution for rising megacities. LEV's apply new technology enabling greater power efficiency, smaller size, lighter weight, and lower cost solutions. LEVs cost less when compared to gasoline or battery powered EVs, making them affordable and hence attractive to emerging markets, where a transition to electrified mobility is in progress.

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
IPT012N08N5ATMA1 DISTI # V72:2272_06377583	Infineon Technologies AG	Trans MOSFET N-CH 80V 300A Automotive 9-Pin(8+Tab) HSOF T/R RoHS: Compliant	1584	1000:$3.4870 500:$3.8740 250:$4.2300 100:$4.4420 25:$5.0450 10:$5.3000 1:$5.8120
IPT012N08N5ATMA1 DISTI # IPT012N08N5ATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 80V 300A 8HSOF RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	7367In Stock	1000:$4.1789 500:$4.7980 100:$5.7266 10:$6.9650 1:$7.7400
IPT012N08N5ATMA1 DISTI # IPT012N08N5ATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 80V 300A 8HSOF RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	7367In Stock	1000:$4.1789 500:$4.7980 100:$5.7266 10:$6.9650 1:$7.7400
IPT012N08N5ATMA1 DISTI # IPT012N08N5ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 80V 300A 8HSOF RoHS: Compliant Min Qty: 2000 Container: Tape & Reel (TR)	6000In Stock	2000:$3.9069
IPT012N08N5ATMA1 DISTI # 30285985	Infineon Technologies AG	Trans MOSFET N-CH 80V 300A Automotive 9-Pin(8+Tab) HSOF T/R RoHS: Compliant	1584	1000:$3.4560 500:$3.8690 250:$4.2240 100:$4.4349 25:$5.0370 10:$5.2910 2:$5.8019
IPT012N08N5ATMA1 DISTI # IPT012N08N5ATMA1	Infineon Technologies AG	Trans MOSFET N-CH 80V 300A 8-Pin HSOF T/R - Tape and Reel (Alt: IPT012N08N5ATMA1) RoHS: Compliant Min Qty: 2000 Container: Reel	Americas - 4000	2000:$3.7900 4000:$3.7900 8000:$3.7900 12000:$3.6900 20000:$3.6900
IPT012N08N5ATMA1 DISTI # 97Y1841	Infineon Technologies AG	MOSFET, N-CH, 80V, 300A, PG-HSOF-8,Transistor Polarity:N Channel,Continuous Drain Current Id:300A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.001ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes	0	1:$7.1500 10:$6.4700 25:$6.1700 50:$5.7600 100:$5.3600 250:$5.1200 500:$4.6600 1000:$4.0600
IPT012N08N5ATMA1 DISTI # 726-IPT012N08N5ATMA1	Infineon Technologies AG	MOSFET N-Ch 80V 300A HSOF-8 RoHS: Compliant	13149	1:$6.5000 10:$5.8800 25:$5.6100 100:$4.8700 250:$4.6500 500:$4.2400 1000:$3.6900
IPT012N08N5ATMA1 DISTI # 1702318	Infineon Technologies AG	MOSFET N-CH 80V 300A OPTIMOS5 HSOF8, RL of 2000	1	1:£5,814.3600
IPT012N08N5ATMA1 DISTI # 2617417	Infineon Technologies AG	MOSFET, N-CH, 80V, 300A, PG-HSOF-8 RoHS: Compliant	1249	1:£4.7400 10:£4.3400 100:£3.7500 250:£3.5900 500:£3.2600
IPT012N08N5ATMA1 DISTI # C1S322000644274	Infineon Technologies AG	MOSFETs	1584	250:$4.2240 100:$4.4349 25:$5.0370 10:$5.2910 1:$5.8019
IPT012N08N5ATMA1 DISTI # 2617417	Infineon Technologies AG	MOSFET, N-CH, 80V, 300A, PG-HSOF-8 RoHS: Compliant	476	1:$12.3400 10:$11.1100 100:$9.1300 500:$7.6500 1000:$6.6700

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: IPT012N08N5ATMA1 OMO.#: OMO-IPT012N08N5ATMA1	MOSFET N-Ch 80V 300A HSOF-8
	Mfr.#: IPT012N08N5 012N08N5 OMO.#: OMO-IPT012N08N5-012N08N5-1190	Nuovo e originale
	Mfr.#: IPT012N06NATMA1 OMO.#: OMO-IPT012N06NATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 60V 240A HSOF-8
	Mfr.#: IPT012N08N5 OMO.#: OMO-IPT012N08N5-1190	Trans MOSFET N-CH 80V 300A 9-Pin(8+Tab) HSOF
	Mfr.#: IPT012N08N5ATMA1 OMO.#: OMO-IPT012N08N5ATMA1-INFINEON-TECHNOLOGIES	MOSFET N-Ch 80V 300A HSOF-8

Disponibilità

Azione:: Available
Su ordine:: 2000
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Il prezzo attuale di IPT012N08N5ATMA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~4,75 USD~~; ~~4,75 USD~~

10: ~~4,51 USD~~; ~~45,14 USD~~

100: ~~4,28 USD~~; ~~427,68 USD~~

500: ~~4,04 USD~~; ~~2 019,60 USD~~

1000: ~~3,80 USD~~; ~~3 801,60 USD~~

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IPT012N08 3
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IPT012N08N5ATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes