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SIHD6N62E-GE3

SIHD6N62E-GE3
Mfr. #:
SIHD6N62E-GE3
Produttore:
Vishay
Descrizione:
RF Bipolar Transistors MOSFET 620V 900mOhm@10V 6A N-Ch E-SRS
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SIHD6N62E-GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
SIHD6N62E-GE3 maggiori informazioni
Attributo del prodotto
Valore attributo
Tags
SIHD6N62, SIHD6N6, SIHD6, SIHD, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
E Series N Channel 620 V 900 mO 34 nC Surface Mount Power Mosfet - DPAK
***ical
Trans MOSFET N-CH 620V 6A 3-Pin(2+Tab) DPAK
***et Europe
Trans MOSFET N-CH 620V 6A 3-Pin DPAK
***i-Key
MOSFET N-CH 620V 6A TO-252
***ark
N-CHANNEL 620V
***ment14 APAC
Prices include import duty and tax. MOSFET, N CH, 620V, 6A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:620V; On Resistance Rds(on):0.78ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:-; Power Dissipation Pd:78W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; Operating Temperature Min:-55°C
***nell
MOSFET, CANALE N, 620V, 6A, TO-252-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:6A; Tensione Drain Source Vds:620V; Resistenza di Attivazione Rds(on):0.78ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:-; Dissipazione di Potenza Pd:78W; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Temperatura di Esercizio Min:-55°C
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Parte # Mfg. Descrizione Azione Prezzo
SIHD6N62E-GE3
DISTI # 31638809		Vishay IntertechnologiesTrans MOSFET N-CH 620V 6A 3-Pin(2+Tab) DPAK
RoHS: Compliant		2970
  • 3000:$0.6149
  • 1000:$0.6312
  • 500:$0.8908
  • 100:$1.0447
  • 10:$1.3002
SIHD6N62E-GE3
DISTI # V99:2348_09218403		Vishay IntertechnologiesTrans MOSFET N-CH 620V 6A 3-Pin(2+Tab) DPAK
RoHS: Compliant		2970
  • 3000:$0.6149
  • 1000:$0.6312
  • 500:$0.8908
  • 100:$1.0447
  • 10:$1.3002
  • 1:$1.5349
SIHD6N62E-GE3
DISTI # V36:1790_09218403		Vishay IntertechnologiesTrans MOSFET N-CH 620V 6A 3-Pin(2+Tab) DPAK
RoHS: Compliant		0
  • 3000000:$0.6417
  • 1500000:$0.6446
  • 300000:$0.9259
  • 30000:$1.4340
  • 3000:$1.5200
SIHD6N62E-GE3
DISTI # SIHD6N62E-GE3-ND		Vishay SiliconixMOSFET N-CH 620V 6A TO-252
Min Qty: 1
Container: Tube		3090In Stock
  • 5000:$0.6259
  • 2500:$0.6588
  • 500:$0.8941
  • 100:$1.0824
  • 25:$1.3176
  • 10:$1.3880
  • 1:$1.5500
SIHD6N62E-GE3
DISTI # SIHD6N62E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 620V 6A 3-Pin DPAK (Alt: SIHD6N62E-GE3)
Min Qty: 3000		Europe - 0
  • 30000:€0.5529
  • 18000:€0.5779
  • 12000:€0.6539
  • 6000:€0.8069
  • 3000:€1.1249
SIHD6N62E-GE3
DISTI # SIHD6N62E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 620V 6A 3-Pin DPAK - Tape and Reel (Alt: SIHD6N62E-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.6029
  • 18000:$0.6199
  • 12000:$0.6369
  • 6000:$0.6639
  • 3000:$0.6849
SIHD6N62E-GE3
DISTI # 78-SIHD6N62E-GE3		Vishay IntertechnologiesMOSFET 620V Vds 30V Vgs DPAK (TO-252)
RoHS: Compliant		4048
  • 1:$1.5500
  • 10:$1.3100
  • 100:$1.0500
  • 500:$0.8940
  • 1000:$0.6580
  • 3000:$0.6250
  • 9000:$0.6020
SIHD6N62E-GE3Vishay IntertechnologiesMOSFET 620V Vds 30V Vgs DPAK (TO-252)
RoHS: Compliant		Americas -
    SIHD6N62E-GE3
    DISTI # 2400378    		Vishay IntertechnologiesMOSFET, N CH, 620V, 6A, TO-252-3
    RoHS: Compliant    		0
    • 5025:$0.9840
    • 2550:$1.0400
    • 525:$1.4100
    • 150:$1.7100
    • 75:$2.0700
    • 10:$2.1900
    • 1:$2.4400
    SIHD6N62E-GE3
    DISTI # 2400378    		Vishay IntertechnologiesMOSFET, N CH, 620V, 6A, TO-252-3
    RoHS: Compliant    		10
    • 5000:£0.5420
    • 1000:£0.5710
    • 500:£0.6830
    • 250:£0.7380
    • 100:£0.7930
    • 10:£1.0800
    • 1:£1.4200
    Immagine Parte # Descrizione
    SIHD6N65ET1-GE3

    Mfr.#: SIHD6N65ET1-GE3

    OMO.#: OMO-SIHD6N65ET1-GE3

    		 MOSFET 650V Vds E Series DPAK TO-252
    SIHD6N65ET5-GE3

    Mfr.#: SIHD6N65ET5-GE3

    OMO.#: OMO-SIHD6N65ET5-GE3

    		 MOSFET 650V Vds E Series DPAK TO-252
    SIHD6N65E-GE3

    Mfr.#: SIHD6N65E-GE3

    OMO.#: OMO-SIHD6N65E-GE3-VISHAY

    		 RF Bipolar Transistors MOSFET 650V 600mOhm@10V 7A N-Ch E-SRS
    SIHD6N62E-GE3

    Mfr.#: SIHD6N62E-GE3

    OMO.#: OMO-SIHD6N62E-GE3-VISHAY

    		 RF Bipolar Transistors MOSFET 620V 900mOhm@10V 6A N-Ch E-SRS
    SIHD6N62E-GE3-CUT TAPE

    Mfr.#: SIHD6N62E-GE3-CUT TAPE

    OMO.#: OMO-SIHD6N62E-GE3-CUT-TAPE-1190

    		 Nuovo e originale
    SIHD6N65E

    Mfr.#: SIHD6N65E

    OMO.#: OMO-SIHD6N65E-1190

    		 Nuovo e originale
    SIHD6N65EGE3

    Mfr.#: SIHD6N65EGE3

    OMO.#: OMO-SIHD6N65EGE3-1190

    		 Power Field-Effect Transistor, 7A I(D), 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
    SIHD6N65ET4-GE3

    Mfr.#: SIHD6N65ET4-GE3

    OMO.#: OMO-SIHD6N65ET4-GE3-VISHAY

    		 MOSFET N-CH 650V 7A TO252AA
    SIHD6N65ET5-GE3

    Mfr.#: SIHD6N65ET5-GE3

    OMO.#: OMO-SIHD6N65ET5-GE3-VISHAY

    		 MOSFET N-CH 650V 7A TO252AA
    SIHD6N80E-GE3

    Mfr.#: SIHD6N80E-GE3

    OMO.#: OMO-SIHD6N80E-GE3-VISHAY

    		 MOSFET N-CHAN 800V TO-252
    Disponibilità
    Azione:
    Available
    Su ordine:
    1500
    Inserisci la quantità:
    Il prezzo attuale di SIHD6N62E-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    0,85 USD
    0,85 USD
    10
    0,80 USD
    8,04 USD
    100
    0,76 USD
    76,15 USD
    500
    0,72 USD
    359,60 USD
    1000
    0,68 USD
    676,90 USD
    A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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