BSF024N03LT3G

Mfr. #:: BSF024N03LT3G
Produttore:: Rochester Electronics, LLC
Descrizione:: Power Field-Effect Transistor, 15A I(D), 30V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: BSF024N03LT3G Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
Pagamento:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Attributo del prodotto
Valore attributo

Tags: BSF0, BSF

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSF024N03LT3G Descrizione

***et: Trans MOSFET N-CH 30V 15A 8-Pin CanPAK

***ronik: N-CH 30V 106A 2mOhm WDSON-2 RoHSconf

***el Electronic: Power Field-Effect Transistor, 15A I(D), 30V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-2, 3 PIN

***ineon SCT: 30V, N-Ch, 2.4 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T2, PG-TO263-3, RoHS

***ical: Trans MOSFET N-CH 30V 80A Automotive 3-Pin(2+Tab) D2PAK T/R

***ineon: Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green product (RoHS compliant); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 30V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: OptiMOS-T2 30V addresses all kind of EPS motor control, 3-phase and H-bridge motors, HVAC fan control, electric pumps, etc. especially in combination with PWM control.; Thus OptiMOS-T2 30V products based on Infineons advanced trench technology will be the benchmark for next generation of automotive applications in energy efficiency, CO2 reduction, e-drives.

*** Electronics: MOSFET N-CH 25V 80A TO-263

***i-Key: N-CHANNEL POWER MOSFET

***el Nordic: Contact for details

***emi: N-Channel PowerTrench® MOSFET, Logic Level, 30V, 60A, 9mΩ

***Yang: Trans MOSFET N-CH 30V 60A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel

***ure Electronics: N-Channel 30 V 9 mohm Surface Mount Logic Level PowerTrench Mosfet TO-263AB

*** Stop Electro: Power Field-Effect Transistor, 60A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***el Electronic: Chip Resistor - Surface Mount 680Ohm 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 680 OHM 1% 1/10W 0402

***nell: MOSFET, N-CH, 30V, 60A, TO-263AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 60A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0068ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.9V; Power Dissipation Pd: 60W; Transistor Case Style: TO-263AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

***rchild Semiconductor: This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

***i-Key: MOSFET N-CH 30V 71A D2PAK

***Yang: TRANS MOSFET N-CH 30V 71A 3PIN TO-263 - Bulk

***ser: MOSFETs 30V N-Ch PowerTrench MOSFET

***p One Stop Global: Trans MOSFET N-CH 30V 80A 3-Pin(2+Tab) D2PAK T/R

***el Electronic: Chip Resistor - Surface Mount 63.4kOhm 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 63.4K OHM 1% 1/10W 0402

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:80A; On Resistance, Rds(on):6.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-263AB ;RoHS Compliant: Yes

***rchild Semiconductor: This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

***ponent Stockers USA: 20 A 30 V 0.0217 ohm N-CHANNEL Si POWER MOSFET TO-263AB

***i-Key: MOSFET N-CH 30V 20A TO263-3

*** Electronics: OPTLMOS N-CHANNEL POWER MOSFET

***el Nordic: Contact for details

***et: N-KANAL POWER MOS

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
BSF024N03LT3GXUMA1 DISTI # BSF024N03LT3GXUMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 30V 106A 2WDSON RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	5000In Stock	1000:$0.8040 500:$1.0184 100:$1.3132 10:$1.6620 1:$1.8800
BSF024N03LT3GXUMA1 DISTI # BSF024N03LT3GXUMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 30V 106A 2WDSON RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	5000In Stock	1000:$0.8040 500:$1.0184 100:$1.3132 10:$1.6620 1:$1.8800
BSF024N03LT3GXUMA1 DISTI # BSF024N03LT3GXUMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 30V 106A 2WDSON RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	Limited Supply - Call
BSF024N03LT3 G DISTI # 726-BSF024N03LT3G	Infineon Technologies AG	MOSFET N-Ch 30V 106A CanPAK3 ST OptiMOS 3 RoHS: Compliant	0
BSF024N03LT3G	Infineon Technologies AG	Power Field-Effect Transistor, 15A I(D), 30V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	19963	1000:$0.5000 500:$0.5300 100:$0.5500 25:$0.5700 1:$0.6200

Prodotti correlati

Immagine

Parte #

Descrizione

Mfr.#: BSF024N03LT3G

OMO.#: OMO-BSF024N03LT3G-1190

Power Field-Effect Transistor, 15A I(D), 30V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Mfr.#: BSF024N03LT3GXUMA1

OMO.#: OMO-BSF024N03LT3GXUMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 30V 106A 2WDSON

Disponibilità

Azione:: Available
Su ordine:: 1000
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Il prezzo attuale di BSF024N03LT3G è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,75 USD~~; ~~0,75 USD~~

10: ~~0,71 USD~~; ~~7,12 USD~~

100: ~~0,68 USD~~; ~~67,50 USD~~

500: ~~0,64 USD~~; ~~318,75 USD~~

1000: ~~0,60 USD~~; ~~600,00 USD~~

A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.

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BSF024N03LT3G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes