HGTG18N120BN

Mfr. #:: HGTG18N120BN
Produttore:: ON Semiconductor / Fairchild
Descrizione:: IGBT Transistors 54A 1200V N-Ch
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: HGTG18N120BN Scheda dati
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HTML Datasheet:: HGTG18N120BN Datasheet HGTG18N120BN Datasheet (P4-P6)HGTG18N120BN Datasheet (P7-P8)
ECAD Model:

Attributo del prodotto
Valore attributo

Produttore:: ON Semiconductor

Categoria di prodotto:: Transistor IGBT

RoHS:: E

Tecnologia:: si

Pacchetto/custodia:: TO-247-3

Stile di montaggio:: Foro passante

Configurazione:: Separare

Tensione collettore-emettitore VCEO Max:: 1200 V

Tensione di saturazione collettore-emettitore:: 2.45 V

Tensione massima dell'emettitore di gate:: 20 V

Corrente continua del collettore a 25 C:: 54 A

Pd - Dissipazione di potenza:: 390 W

Temperatura di esercizio minima:: - 55 C

Temperatura massima di esercizio:: + 150 C

Serie:: HGTG18N120BN

Confezione:: Tubo

Corrente continua del collettore Ic Max:: 54 A

Altezza:: 20.82 mm

Lunghezza:: 15.87 mm

Larghezza:: 4.82 mm

Marca:: ON Semiconductor / Fairchild

Corrente continua del collettore:: 54 A

Corrente di dispersione gate-emettitore:: +/- 250 nA

Tipologia di prodotto:: Transistor IGBT

Quantità confezione di fabbrica:: 450

sottocategoria:: IGBT

Parte # Alias:: HGTG18N120BN_NL

Unità di peso:: 0.225401 oz

Tags: HGTG18N120B, HGTG18, HGTG1, HGTG, HGT

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
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HGTG18N120BN Descrizione

***ical: TransIGBTChipNCH1200V54A390000mW3Pin3TabTO247Rail

***ark: IGBT;TransistorTypeIGBT;TransistorPolarityNChannel;ContinuousCollectorCurrentIc54A;CollectorEmitterSaturationVoltageVcesat27V;PowerDissipationPd390W;PackageCaseTO247;RoHSCompliantYes

***rchildSemiconductor: HGTG18N120BNisbasedonNonPunchThroughNPTIGBTdesignsTheIGBTisidealformanyhighvoltageswitchingapplicationsoperatingatmoderatefrequencieswherelowconductionlossesareessentialsuchasUPSsolarinvertermotorcontrolandpowersupplies

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
HGTG18N120BN DISTI # 16558844	ON Semiconductor	54A&#44,1200V&#44,NPT SERIES	300	300:$1.6945
HGTG18N120BND DISTI # HGTG18N120BND-ND	ON Semiconductor	IGBT 1200V 54A 390W TO247 RoHS: Compliant Min Qty: 1 Container: Tube	884In Stock	2700:$2.3913 900:$2.9772 450:$3.3180 25:$4.0352 10:$4.2690 1:$4.7500
HGTG18N120BN DISTI # HGTG18N120BN-ND	ON Semiconductor	IGBT 1200V 54A 390W TO247 RoHS: Compliant Min Qty: 450 Container: Tube	Limited Supply - Call	450:$2.9221
HGTG18N120BND DISTI # V36:1790_06358981	ON Semiconductor	NPTPIGBT TO247 54A 1200V	0	450000:$1.9270 225000:$1.9320 45000:$2.7410 4500:$4.4480 450:$4.7500
HGTG18N120BND DISTI # HGTG18N120BND	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 54A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG18N120BND) RoHS: Compliant Min Qty: 30 Container: Tube	Americas - 1266	150:$2.4900 300:$2.4900 30:$2.5900 60:$2.5900 90:$2.5900
HGTG18N120BN DISTI # HGTG18N120BN	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 54A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG18N120BN) RoHS: Compliant Min Qty: 450 Container: Tube	Americas - 0	4500:$1.9900 450:$2.0900 900:$2.0900 1800:$2.0900 2700:$2.0900
HGTG18N120BN DISTI # HGTG18N120BN	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 54A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG18N120BN) RoHS: Compliant Min Qty: 1	Europe - 0	100:€1.5900 500:€1.5900 1000:€1.5900 25:€1.6900 50:€1.6900 10:€1.7900 1:€1.8900
HGTG18N120BN DISTI # HGTG18N120BN	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 54A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: HGTG18N120BN) RoHS: Compliant Min Qty: 50 Container: Bulk	Americas - 0	500:$6.0900 250:$6.2900 150:$6.3900 50:$6.4900 100:$6.4900
HGTG18N120BND DISTI # HGTG18N120BND	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 54A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG18N120BND) RoHS: Compliant Min Qty: 1	Europe - 0	1000:€1.6900 500:€1.7900 50:€1.8900 100:€1.8900 25:€1.9900 10:€2.0900 1:€2.2900
HGTG18N120BND DISTI # 58K8901	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 54A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: 58K8901) RoHS: Compliant Min Qty: 1 Container: Bulk	Americas - 0
HGTG18N120BN DISTI # 83F5467	ON Semiconductor	SINGLE IGBT, 1.2KV, 54A,DC Collector Current:54A,Collector Emitter Saturation Voltage Vce(on):2.7V,Power Dissipation Pd:390W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes	0	500:$4.5000 250:$4.6400 100:$5.5400 50:$5.9600 25:$6.3700 10:$6.9900 1:$7.7900
HGTG18N120BND DISTI # 97K1398	ON Semiconductor	IGBT Single Transistor, General Purpose, 54 A, 2.7 V, 390 W, 1.2 kV, TO-247, 3 RoHS Compliant: Yes	382	500:$4.2400 250:$4.6100 100:$4.7900 50:$5.1100 25:$5.4300 10:$5.6700 1:$6.2100
HGTG18N120BN DISTI # 512-HGTG18N120BN	ON Semiconductor	IGBT Transistors 54A 1200V N-Ch RoHS: Compliant	0
HGTG18N120BND DISTI # 512-HGTG18N120BND	ON Semiconductor	IGBT Transistors 54A 1200V N-Ch w/Ant Parallel Hyprfst Dde RoHS: Compliant	665	1:$6.2100 10:$5.2800 100:$4.5700 250:$4.3400 500:$3.8900
HGTG18N120BN	Fairchild Semiconductor Corporation	Insulated Gate Bipolar Transistor, 54A I(C), 1200V V(BR)CES, N-Channel, TO-247 RoHS: Compliant	737	1000:$2.4300 500:$2.5600 100:$2.6700 25:$2.7800 1:$3.0000
HGTG18N120BND DISTI # 9034285	ON Semiconductor	IGBT N-CH 1200V 54A NPT TO-247, EA	93	300:£3.6400 100:£3.8000 30:£4.3900 15:£4.6000 1:£5.0900
HGTG18N120BND DISTI # 9034285P	ON Semiconductor	IGBT N-CH 1200V 54A NPT TO-247, TU	732	300:£3.6400 100:£3.8000 30:£4.3900 15:£4.6000
HGTG18N120BND	Harris Semiconductor		38
HGTG18N120BN DISTI # HGTG18N120BN	ON Semiconductor	Transistor: IGBT,1.2kV,26A,390W,TO247-3	11	20:$5.2254 10:$5.9461 5:$6.9000 1:$7.6669
HGTG18N120BND DISTI # HGTG18N120BND	ON Semiconductor	Transistor: IGBT,1.2kV,26A,390W,TO247-3	46	30:$3.8900 10:$4.3200 3:$5.3900 1:$6.2500
HGTG18N120BND DISTI # 1095111	ON Semiconductor	IGBT, N, TO-247 RoHS: Compliant	391	500:$5.9800 250:$6.6800 100:$7.0300 10:$8.1200 1:$9.5500
HGTG18N120BND DISTI # XSKDRABS0025239	ON SEMICONDUCTOR	RoHS: Compliant	360 in Stock0 on Order	360:$2.8300 165:$3.0300
HGTG18N120BND DISTI # 1095111	ON Semiconductor	IGBT, N, TO-247	2009	500:£3.0000 250:£3.3400 100:£3.5200 10:£4.0700 1:£5.2800

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: HGTG18N120BND OMO.#: OMO-HGTG18N120BND	IGBT Transistors 54A 1200V N-Ch w/Ant Parallel Hyprfst Dde
	Mfr.#: HGTG18N120BN OMO.#: OMO-HGTG18N120BN	IGBT Transistors 54A 1200V N-Ch
	Mfr.#: HGTG18N120BND OMO.#: OMO-HGTG18N120BND-ON-SEMICONDUCTOR	IGBT Transistors 54A 1200V N-Ch w/Ant Parallel Hyprfst Dde
	Mfr.#: HGTG18N120 OMO.#: OMO-HGTG18N120-1190	Nuovo e originale
	Mfr.#: HGTG18N120BN OMO.#: OMO-HGTG18N120BN-ON-SEMICONDUCTOR	IGBT 1200V 54A 390W TO247
	Mfr.#: HGTG18N120BND,18N120BND OMO.#: OMO-HGTG18N120BND-18N120BND-1190	Nuovo e originale
	Mfr.#: HGTG18N120BND,18N120BND, OMO.#: OMO-HGTG18N120BND-18N120BND--1190	Nuovo e originale
	Mfr.#: HGTG18N120BND,18N120BND,18N120, OMO.#: OMO-HGTG18N120BND-18N120BND-18N120--1190	Nuovo e originale
	Mfr.#: HGTG18N120BND-NL OMO.#: OMO-HGTG18N120BND-NL-1190	Nuovo e originale
	Mfr.#: HGTG18N120BN G18N120BN OMO.#: OMO-HGTG18N120BN-G18N120BN-1190	Nuovo e originale

Disponibilità

Azione:: Available
Su ordine:: 5500
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HGTG18N120B 7
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HGTG18N120BN

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes