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FGP15N60UNDF

FGP15N60UNDF
Mfr. #:
FGP15N60UNDF
Produttore:
ON Semiconductor / Fairchild
Descrizione:
IGBT Transistors 600V 15A NPT IGBT
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FGP15N60UNDF Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
FGP15N60UNDF maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
Transistor IGBT
RoHS:
Y
Tecnologia:
si
Pacchetto/custodia:
TO-220-3
Stile di montaggio:
Foro passante
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
600 V
Tensione di saturazione collettore-emettitore:
2.7 V
Tensione massima dell'emettitore di gate:
20 V
Corrente continua del collettore a 25 C:
30 A
Pd - Dissipazione di potenza:
178 W
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Serie:
FGP15N60UNDF
Confezione:
Tubo
Marca:
ON Semiconductor / Fairchild
Corrente di dispersione gate-emettitore:
+/- 10 uA
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
800
sottocategoria:
IGBT
Unità di peso:
0.063493 oz
Tags
FGP15N6, FGP15, FGP1, FGP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Source Electronics
Trans IGBT Chip N-CH 600V 30A 178000mW 3-Pin(3+Tab) TO-220 Tube / IGBT 600V 30A 178W TO220-3
*** Stop Electro
Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***rchild Semiconductor
Using advanced NPT IGBT technology, Fairchild’s the NPT IGBTs offer the optimum performance for low-power inverter-driven applications where low-losses and short-circuit ruggedness features are essential, such as : sewing machine, CNC, motor control and home appliances.
***p One Stop Global
Trans IGBT Chip N-CH 600V 30A 3-Pin(3+Tab) TO-220F Tube
***r Electronics
Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***rchild Semiconductor
Using advanced NPT IGBT technology, Fairchild’s the NPT IGBTs offer the optimum performance for low-power inverter-driven applications where low-losses and short-circuit ruggedness features are essential, such as : sewing machine, CNC, motor control and home appliances.
***ical
Trans IGBT Chip N-CH 600V 30A 30000mW 3-Pin(3+Tab) TO-220FP Tube
***ure Electronics
STGF15Hxx Series 600 V 30 A Flange Mount Trench Gate Field-Stop IGBT - TO-220FP
***icroelectronics
Trench gate field-stop IGBT, H series 600 V, 15 A high speed
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***nell
IGBT, 600V, 30A, 175DEG C, 30W; DC Collector Current: 30A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 30W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220FP; No. of Pins:
***p One Stop
Trans IGBT Chip N-CH 600V 30A 115000mW 3-Pin(3+Tab) TO-220 Tube
***icroelectronics
Trench gate field-stop IGBT, H series 600 V, 15 A high speed
***ure Electronics
STGP Series 600 V 30 A 24.5 ns t(on) Trench Gate Field-Stop IGBT - TO-220-3
***r Electronics
Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***et
TO-220, SINGLE, N-CHANNEL, 600V, SMPS II SERIES IGBT
***i-Key
IGBT 600V 28A 125W TO220AB
***ser
IGBTs Sgl, N-Ch, 600V
***el Electronic
IC REG LINEAR POS ADJ HRP7
***i-Key Marketplace
N-CHANNEL IGBT
***el Nordic
Contact for details
***nell
IGBT, N, TO-220; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:28A; Voltage, Vce Sat Max:2.7V; Power Dissipation:125W; Case Style:TO-220AB; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:40A; No. of Pins:3; Pin Format:GCE; Power, Pd:125W; Power, Ptot:125W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall:50ns; Time, Rise:4.5ns; Transistors, No. of:1
***ow.cn
Trans IGBT Chip N-CH 600V 24A 54000mW 3-Pin(3+Tab) TO-220F-3FS Tube
*** Electronics
ON SEMICONDUCTOR NGTB15N60R2FG IGBT Single Transistor, 24 A, 1.85 V, 54 W, 600 V, TO-220F, 3 Pins
***nell
IGBT, SINGLE, 600V, 24A, TO-220F-3; DC Collector Current: 24A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: 54W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220F; No. of P
***p One Stop
Trans IGBT Chip N-CH 600V 32A 140000mW 3-Pin(3+Tab) TO-220AB Tube
***ineon SCT
600 V, 20 A IGBT with anti-parallel diode in TO-220AB package, TO220COPAK-3, RoHS
***ineon
Target Applications: Air Conditioner; Fan; Lighting HID; PFC; Pump; Solar; UPS; Washing Machine; Welding
***ment14 APAC
TRANSISTOR, BIPOLAR, N CHANNEL, 600V, TO-220AB
*** Electronic Components
IGBT Transistors 600V TRENCH IGBT ULTRAFAST
***ark
TUBE / G6, 600V, 20A, TO-220COPAK
***i-Key Marketplace
IRGB4620D - IGBT WITH ANTI-PARAL
Field Stop & Short Circuit Rated IGBTs
ON Semiconductor's Field Stop & short Circuit Rated IGBTs offer a variety of 600 and 650V Insulated Gate Bipolar Transistors (IGBTs) that have a collector current rating between 5A to 60A. This offers optimum performance for welding and PFC or low power inverter driven applications where low conduction, low switching losses and short circuit ruggedness features are essential. Typical applications for these include solar inverters, UPS, SMPS, welder, PFC, home appliance inverter driven (fan motor driver, circulation pump, refrigerator, dish washer), and industrial inverter (sewing machine, CNC).
Parte # Mfg. Descrizione Azione Prezzo
FGP15N60UNDF
DISTI # FGP15N60UNDF-ND		ON SemiconductorIGBT 600V 30A 178W TO220-3
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 1600:$1.3094
  • 800:$1.5802
  • 100:$1.9234
  • 10:$2.3930
  • 1:$2.6600
FGP15N60UNDF
DISTI # FGP15N60UNDF		ON SemiconductorTrans IGBT Chip N-CH 600V 30A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: FGP15N60UNDF)
RoHS: Compliant
Min Qty: 800
Container: Tube		Americas - 0
  • 800:$1.1239
  • 1600:$1.1159
  • 3200:$1.1019
  • 4800:$1.0879
  • 8000:$1.0609
FGP15N60UNDF
DISTI # 512-FGP15N60UNDF		ON SemiconductorIGBT Transistors 600V 15A NPT IGBT
RoHS: Compliant		756
  • 1:$2.5400
  • 10:$2.1500
  • 100:$1.7200
  • 500:$1.5100
FGP15N60UNDFON SemiconductorINSTOCK2269
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    Disponibilità
    Azione:
    617
    Su ordine:
    2600
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