FDS3890

Mfr. #:: FDS3890
Produttore:: ON Semiconductor
Descrizione:: MOSFET 2N-CH 80V 4.7A 8-SO
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: FDS3890 Scheda dati
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Attributo del prodotto
Valore attributo

Produttore: Fairchild Semiconductor

categoria di prodotto: FET - Array

Serie: PowerTrenchR

Confezione: Imballaggio alternativo Digi-ReelR

Alias parziali: FDS3890_NL

Unità di peso: 0.006596 oz

Stile di montaggio: SMD/SMT

Pacchetto-Custodia: 8-SOIC (0.154", 3.90mm Width)

Tecnologia: si

Temperatura di esercizio: -55°C ~ 175°C (TJ)

Tipo di montaggio: Montaggio superficiale

Numero di canali: 2 Channel

Pacchetto-dispositivo-fornitore: 8-SOIC

Configurazione: Doppio doppio scarico

Tipo FET: 2 N-Channel (Dual)

Potenza-Max: 900mW

Tipo a transistor: 2 N-Channel

Drain-to-Source-Voltage-Vdss: 80V

Ingresso-Capacità-Ciss-Vds: 1180pF @ 40V

Funzione FET: Porta livello logico

Corrente-Continuo-Scarico-Id-25°C: 4.7A

Rds-On-Max-Id-Vgs: 44 mOhm @ 4.7A, 10V

Vgs-th-Max-Id: 4V @ 250μA

Gate-Carica-Qg-Vgs: 35nC @ 10V

Pd-Power-Dissipazione: 2 W

Massima temperatura di esercizio: + 175 C

Temperatura di esercizio minima: - 55 C

Tempo di caduta: 12 ns

Ora di alzarsi: 8 ns

Vgs-Gate-Source-Voltage: 20 V

Id-Continuo-Scarico-Corrente: 4.7 A

Vds-Drain-Source-Breakdown-Voltage: 80 V

Rds-On-Drain-Source-Resistenza: 44 mOhms

Polarità del transistor: Canale N

Tempo di ritardo allo spegnimento tipico: 26 ns

Tempo di ritardo all'accensione tipico: 11 ns

Transconduttanza diretta-Min: 24 S

Modalità canale: Aumento

Tags: FDS389, FDS38, FDS3, FDS

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDS3890 Descrizione

***ure Electronics: N-Channel 80 V 44 mOhm Surface Mount Dual PowerTrench Mosfet SOIC-8

***Semiconductor: N-Channel Dual PowerTrench® MOSFET, 80V, 4.7A, 44mΩ

***p One Stop Japan: Trans MOSFET N-CH 80V 4.7A 8-Pin SOIC N T/R

***Components: On a Reel of 2500, ON Semiconductor FDS3890 MOSFET

***eco: 008, PLASTIC MOLDED, SOIC-8 PKG, NARROW BODY, DUAL DIE <AZ

***i-Key: MOSFET 2N-CH 80V 4.7A SO-8

***et: S0-8, DUAL, NCH, 80V/20V

***ser: MOSFETs SO-8

***ark: Transistor; Continuous Drain Current, Id:4.7A; Drain Source Voltage, Vds:80V; On Resistance, Rds(on):0.05ohm; Rds(on) Test Voltage, Vgs:6V; Threshold Voltage, Vgs Typ:2.3V; Power Dissipation, Pd:2W ;RoHS Compliant: Yes

***ment14 APAC: N CHANNEL MOSFET, 80V, SOIC; Transistor; N CHANNEL MOSFET, 80V, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:4.7A; Drain Source Voltage Vds, N Channel:80V; On Resistance Rds(on), N Channel:0.0034ohm; Rds(on) Test Voltage Vgs:6V

***nell: MOSFET, NN CH, 80V, 8SOIC; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:4.7A; Drain Source Voltage Vds:80V; On Resistance Rds(on):34mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
FDS3890 DISTI # FDS3890TR-ND	ON Semiconductor	MOSFET 2N-CH 80V 4.7A 8-SO RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	On Order	2500:$0.7237
FDS3890 DISTI # FDS3890CT-ND	ON Semiconductor	MOSFET 2N-CH 80V 4.7A 8-SO RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.7986 500:$1.0116 100:$1.3044 10:$1.6500 1:$1.8600
FDS3890 DISTI # FDS3890DKR-ND	ON Semiconductor	MOSFET 2N-CH 80V 4.7A 8-SO RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.7986 500:$1.0116 100:$1.3044 10:$1.6500 1:$1.8600
FDS3890 DISTI # FDS3890	ON Semiconductor	Trans MOSFET N-CH 80V 4.7A 8-Pin SOIC N T/R - Tape and Reel (Alt: FDS3890) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.5599 5000:$0.5569 10000:$0.5499 15000:$0.5429 25000:$0.5289
FDS3890 DISTI # FDS3890	ON Semiconductor	Trans MOSFET N-CH 80V 4.7A 8-Pin SOIC N T/R (Alt: FDS3890) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	2500:€0.7889 5000:€0.6459 10000:€0.5919 15000:€0.5459 25000:€0.5069
FDS3890 DISTI # FDS3890	ON Semiconductor	Trans MOSFET N-CH 80V 4.7A 8-Pin SOIC N T/R (Alt: FDS3890) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0	2500:$0.6875 5000:$0.6611 7500:$0.6366 12500:$0.6139 25000:$0.5927 62500:$0.5729 125000:$0.5635
FDS3890 DISTI # 67P3482	ON Semiconductor	Trans MOSFET N-CH 80V 4.7A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 67P3482) RoHS: Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$1.7400 10:$1.4900 25:$1.3900 50:$1.3000 100:$1.2100 250:$1.1300 500:$1.0600
FDS3890 DISTI # 67P3482	ON Semiconductor	N CHANNEL MOSFET, 80V, SOIC,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:4.7A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.034ohm,Rds(on) Test Voltage Vgs:6V,Threshold Voltage Vgs:2.3V,Product Range:-RoHS Compliant: Yes	0	1:$1.7400 10:$1.4900 25:$1.3900 50:$1.3000 100:$1.2100 250:$1.1300 500:$1.0600 1000:$0.8800
FDS3890 DISTI # 87X8731	ON Semiconductor	Dual MOSFET, Dual N Channel, 4.7 A, 80 V, 0.034 ohm, 10 V, 2.3 V RoHS Compliant: Yes	52	1:$1.5500 10:$1.3200 100:$1.0200 500:$0.8930 1000:$0.7050
FDS3890 DISTI # 512-FDS3890	ON Semiconductor	MOSFET SO-8 RoHS: Compliant	0	1:$1.5500 10:$1.3200 100:$1.0200 500:$0.8930 1000:$0.7050 2500:$0.6250 10000:$0.6020
FDS3890	ON Semiconductor	RoHS: Not Compliant	2296	1000:$0.7400 500:$0.7800 100:$0.8100 25:$0.8400 1:$0.9100
FDS3890	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 4.7A I(D), 80V, 0.044ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	60	1000:$0.7400 500:$0.7800 100:$0.8100 25:$0.8400 1:$0.9100
FDS3890 DISTI # 8063630	ON Semiconductor	MOSFETFAIRCHILDFDS3890, PK	50	5:£1.0080 50:£0.8520 100:£0.7400
FDS3890 DISTI # 8063630P	ON Semiconductor	MOSFETFAIRCHILDFDS3890, RL	270	50:£0.8520 100:£0.7400
FDS3890	Fairchild Semiconductor Corporation		15
FDS3890 DISTI # 2101472	ON Semiconductor	MOSFET, NN CH, 80V, 8SOIC RoHS: Compliant	52	1:$2.4600 10:$2.0900 100:$1.6200 500:$1.4200 1000:$1.1200 2500:$0.9900 10000:$0.9530
FDS3890 DISTI # 2101472	ON Semiconductor	MOSFET, NN CH, 80V, 8SOIC RoHS: Compliant	1012	5:£1.1100 25:£1.0100 100:£0.8110 250:£0.7590 500:£0.7060

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Disponibilità

Azione:: Available
Su ordine:: 2000
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Il prezzo attuale di FDS3890 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,72 USD~~; ~~0,72 USD~~

10: ~~0,68 USD~~; ~~6,83 USD~~

100: ~~0,65 USD~~; ~~64,67 USD~~

500: ~~0,61 USD~~; ~~305,35 USD~~

1000: ~~0,57 USD~~; ~~574,80 USD~~

Iniziare con

FDS389 6
FDS38 10
FDS3 73
FDS 1298

FDS3890

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes