IPI65R190CFD

IPI65R190CFD
Mfr. #:
IPI65R190CFD
Produttore:
Infineon Technologies
Descrizione:
MOSFET N-Ch 650V 17.5A I2PAK-3 CoolMOS CFD2
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IPI65R190CFD Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
IPI65R190CFD maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-262-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
650 V
Id - Corrente di scarico continua:
17.5 A
Rds On - Resistenza Drain-Source:
190 mOhms
Vgs th - Tensione di soglia gate-source:
4 V
Vgs - Tensione Gate-Source:
30 V
Qg - Carica cancello:
68 nC
Pd - Dissipazione di potenza:
151 W
Configurazione:
Separare
Nome depositato:
CoolMOS
Confezione:
Tubo
Altezza:
9.45 mm
Lunghezza:
10.2 mm
Serie:
CoolMOS CFD2
Tipo di transistor:
1 N-Channel
Larghezza:
4.5 mm
Marca:
Tecnologie Infineon
Tempo di caduta:
6.4 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
8.4 ns
Quantità confezione di fabbrica:
500
sottocategoria:
MOSFET
Parte # Alias:
IPI65R190CFDXKSA1 IPI65R19CFDXK SP000905386
Unità di peso:
0.084199 oz
Tags
IPI65R190CF, IPI65R19, IPI65R1, IPI65, IPI6, IPI
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolMOS® Power Transistors EXPANSION
Infineon Technologies has expanded its offering of CoolMOS® Power Transistors that use a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle. These CoolMOS® Power Transistors provide all the benefits of a fast switching SJ MOSFET, while offering an extremely fast and robust body diode. Infineon Technologies CoolMOS® Power Transistors are especially suited for resonant switching PWM stages for PC Silverbox, LCD TV, lighting, server and telecom applications.Learn MoreInfineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.View the entire CoolMOS® Power Transistor offering
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Parte # Mfg. Descrizione Azione Prezzo
IPI65R190CFDXKSA1
DISTI # IPI65R190CFDXKSA1-ND
Infineon Technologies AGMOSFET N-CH 650V 17.5A TO262
RoHS: Compliant
Min Qty: 500
Container: Tube
Temporarily Out of Stock
  • 500:$2.0267
IPI65R190CFDXKSA1
DISTI # IPI65R190CFDXKSA1
Infineon Technologies AGTrans MOSFET N-CH 650V 17.5A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: IPI65R190CFDXKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube
Americas - 0
  • 500:$1.4900
  • 1000:$1.4900
  • 2000:$1.3900
  • 3000:$1.3900
  • 5000:$1.3900
IPI65R190CFDXKSA2
DISTI # IPI65R190CFDXKSA2
Infineon Technologies AGTrans MOSFET N-CH 650V 17.5A 3-Pin TO-262 Tube - Rail/Tube (Alt: IPI65R190CFDXKSA2)
RoHS: Compliant
Min Qty: 500
Container: Tube
Americas - 0
    IPI65R190CFD
    DISTI # 726-IPI65R190CFD
    Infineon Technologies AGMOSFET N-Ch 650V 17.5A I2PAK-3 CoolMOS CFD2
    RoHS: Compliant
    0
    • 1:$2.9400
    • 10:$2.5000
    • 100:$2.1700
    • 250:$2.0600
    • 500:$1.8500
    IPI65R190CFDXKSA2
    DISTI # 726-IPI65R190CFDXKSA
    Infineon Technologies AGMOSFET 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and ther
    RoHS: Compliant
    0
    • 500:$1.8500
    • 1000:$1.5600
    • 2500:$1.4800
    • 5000:$1.4300
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    OMO.#: OMO-IPI65R190CFDXKSA1-INFINEON-TECHNOLOGIES

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    RF Bipolar Transistors MOSFET N-Ch 700V 31.2A I2PAK-3 CoolMOS CFD2
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    RF Bipolar Transistors MOSFET N-Ch 700V 72A I2PAK-3
    Disponibilità
    Azione:
    Available
    Su ordine:
    2500
    Inserisci la quantità:
    Il prezzo attuale di IPI65R190CFD è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    2,93 USD
    2,93 USD
    10
    2,49 USD
    24,90 USD
    100
    2,16 USD
    216,00 USD
    250
    2,05 USD
    512,50 USD
    500
    1,84 USD
    920,00 USD
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