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MJD117-1G

MJD117-1G
Mfr. #:
MJD117-1G
Produttore:
ON Semiconductor
Descrizione:
Darlington Transistors 2A 100V Bipolar Power PNP
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
MJD117-1G Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
MJD117-1G DatasheetMJD117-1G Datasheet (P4-P6)MJD117-1G Datasheet (P7-P9)MJD117-1G Datasheet (P10)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
Transistor Darlington
RoHS:
Y
Configurazione:
Separare
Polarità del transistor:
PNP
Tensione collettore-emettitore VCEO Max:
100 V
Emettitore-tensione di base VEBO:
5 V
Collettore-tensione di base VCBO:
100 V
Corrente massima del collettore CC:
2 A
Corrente massima di interruzione del collettore:
20 uA
Pd - Dissipazione di potenza:
20 W
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
DPAK-3
Temperatura di esercizio minima:
- 65 C
Temperatura massima di esercizio:
+ 150 C
Serie:
MJD117
Confezione:
Tubo
Altezza:
6.22 mm
Lunghezza:
6.73 mm
Larghezza:
2.38 mm
Marca:
ON Semiconductor
Corrente continua del collettore:
2 A
Guadagno base/collettore DC hfe min:
200, 500, 1000
Tipologia di prodotto:
Transistor Darlington
Quantità confezione di fabbrica:
75
sottocategoria:
transistor
Unità di peso:
0.012346 oz
Tags
MJD117, MJD11, MJD1, MJD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
2.0 A, 100 V PNP Darlington Bipolar Power Transistor
***eco
Transistor Darlington Pnp 100 Volt 2 Amp 3-Pin3+ Tab Dpak-SL Rail
***ure Electronics
MJD Series 100 V 2 A Through Hole PNP Complementary Darlington Transistor
***p One Stop Global
Trans Darlington PNP 100V 2A Automotive 3-Pin(3+Tab) DPAK-3 Rail
***ical
Trans Darlington PNP 100V 2A 1750mW 3-Pin(3+Tab) DPAK-3 Tube
***et Europe
Trans Darlington PNP 100V 2A 3-Pin(3+Tab) DPAK-3 Rail
***i-Key
TRANS PNP DARL 100V 2A IPAK
***Components
ON Semiconductor, MJD117-1G
***th Star Micro
Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators converters and power amplifiers.
***ark
Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:25MHz; Power Dissipation Pd:20W; DC Collector Current:-2A; DC Current Gain hFE:12hFE; No. of Pins:3Pins; Operating Temperature Max:150�C RoHS Compliant: Yes
***ment14 APAC
Prices include import duty and tax. TRANSISTOR, PNP, -100V, -2A, TO-252; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-100V; Transition Frequency ft:25MHz; Power Dissipation Pd:20W; DC Collector Current:-2A; DC Current Gain hFE:1000hFE; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018)
***nell
TRANSISTOR, PNP, -100V, -2A, TO-252; Polarità Transistor:PNP; Tensione Collettore-Emettitore V(br)ceo:-100V; Frequenza di Transizione ft:25MHz; Dissipazione di Potenza Pd:20W; Corrente di Collettore CC:-2A; Guadagno di Corrente CC hFE:1000hFE; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:AEC-Q101; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):Lead (27-Jun-2018)
Parte # Mfg. Descrizione Azione Prezzo
MJD117-1G
DISTI # V99:2348_07296367		ON SemiconductorTrans Darlington PNP 100V 2A Automotive 3-Pin(3+Tab) DPAK-3 Tube
RoHS: Compliant		200
  • 50000:$0.1782
  • 25000:$0.1824
  • 10000:$0.1905
  • 2500:$0.1959
  • 1000:$0.2244
  • 100:$0.2841
  • 10:$0.4007
  • 1:$0.4686
MJD117-1G
DISTI # MJD117-1GOS-ND		ON SemiconductorTRANS PNP DARL 100V 2A IPAK
RoHS: Compliant
Min Qty: 1
Container: Tube		2550In Stock
  • 1050:$0.2640
  • 525:$0.3417
  • 150:$0.4348
  • 75:$0.5435
  • 1:$0.6800
MJD117-1G
DISTI # 30695383		ON SemiconductorTrans Darlington PNP 100V 2A Automotive 3-Pin(3+Tab) DPAK-3 Tube
RoHS: Compliant		200
  • 100:$0.2841
  • 36:$0.4007
MJD117-1G
DISTI # MJD117-1G		ON SemiconductorTrans Darlington PNP 100V 2A 3-Pin(3+Tab) DPAK-3 Rail (Alt: MJD117-1G)
RoHS: Compliant
Min Qty: 75		Europe - 525
  • 75:€0.2529
  • 150:€0.2069
  • 300:€0.1899
  • 450:€0.1749
  • 750:€0.1619
MJD117-1G
DISTI # MJD117-1G		ON SemiconductorTrans Darlington PNP 100V 2A 3-Pin(3+Tab) DPAK-3 Rail - Rail/Tube (Alt: MJD117-1G)
RoHS: Compliant
Min Qty: 2400
Container: Tube		Americas - 0
  • 2400:$0.1759
  • 2550:$0.1749
  • 4950:$0.1729
  • 12000:$0.1699
  • 24000:$0.1659
MJD117-1G
DISTI # 30AC9899		ON SemiconductorTRANSISTOR, PNP, -100V, -2A, TO-252,Transistor Polarity:PNP,Collector Emitter Voltage V(br)ceo:-100V,Transition Frequency ft:25MHz,Power Dissipation Pd:20W,DC Collector Current:-2A,DC Current Gain hFE:1000hFE,Transistor Case , RoHS Compliant: Yes2019
  • 1:$0.6010
  • 10:$0.4800
  • 100:$0.3250
  • 500:$0.2810
  • 1000:$0.2450
  • 2500:$0.1990
  • 10000:$0.1920
MJD117-1G.
DISTI # 15AC3555		ON SemiconductorTransistor Polarity:PNP,Collector Emitter Voltage V(br)ceo:100V,Transition Frequency ft:25MHz,Power Dissipation Pd:20W,DC Collector Current:-2A,DC Current Gain hFE:12hFE,No. of Pins:3Pins,Operating Temperature Max:150°C , RoHS Compliant: Yes0
  • 1:$0.1760
  • 2550:$0.1750
  • 4950:$0.1730
  • 12000:$0.1700
  • 24000:$0.1660
MJD117-1GON SemiconductorMJD Series 100 V 2 A Through Hole PNP Complementary Darlington Transistor
RoHS: Compliant		5250Tube
  • 25:$0.4300
  • 300:$0.3900
  • 1750:$0.3300
MJD117-1GON Semiconductor 
RoHS: Not Compliant		206183
  • 1000:$0.3500
  • 500:$0.3700
  • 100:$0.3900
  • 25:$0.4000
  • 1:$0.4300
MJD117-1G
DISTI # 863-MJD117-1G		ON SemiconductorDarlington Transistors 2A 100V Bipolar Power PNP
RoHS: Compliant		6378
  • 1:$0.6500
  • 10:$0.5340
  • 100:$0.3260
  • 1000:$0.2520
  • 2500:$0.2150
  • 10000:$0.2000
  • 25000:$0.1900
MJD117-1G
DISTI # 2774790		ON SemiconductorTRANSISTOR, PNP, -100V, -2A, TO-252
RoHS: Compliant		2019
  • 5:$0.8670
  • 25:$0.7430
  • 100:$0.5070
  • 250:$0.4160
  • 500:$0.3410
  • 1000:$0.3150
  • 5000:$0.2970
MJD117-1G
DISTI # 2774790		ON SemiconductorTRANSISTOR, PNP, -100V, -2A, TO-252
RoHS: Compliant		2019
  • 5:£0.4620
  • 25:£0.4280
  • 100:£0.2490
  • 250:£0.2210
  • 500:£0.1930
MJD117-1G
DISTI # C1S541900420713		ON SemiconductorTrans Darlington PNP 100V 2A 1750mW Automotive 3-Pin(3+Tab) DPAK-3 Tube
RoHS: Compliant		200
  • 100:$0.2833
  • 10:$0.3867
MJD117-1G
DISTI # XSFP00000056470		ON SEMICONDUCTORPower Bipolar Transistor, 5A I(C), 100VV(BR)CEO,1-Element, NPN, Silicon, TO-251AA,Plastic/Epoxy, 3Pin
RoHS: Compliant		2378
  • 300:$0.5733
  • 2378:$0.5375
MJD117-1GON SemiconductorComplementary Darlington Power Transistors19
  • 1:$0.3700
  • 100:$0.2900
  • 500:$0.2600
  • 1000:$0.2500
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Disponibilità
Azione:
Available
Su ordine:
1988
Inserisci la quantità:
Il prezzo attuale di MJD117-1G è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
0,65 USD
0,65 USD
10
0,53 USD
5,34 USD
100
0,33 USD
32,60 USD
1000
0,25 USD
252,00 USD
2500
0,22 USD
537,50 USD
10000
0,20 USD
2 000,00 USD
25000
0,19 USD
4 750,00 USD
50000
0,18 USD
9 250,00 USD
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