SI4464DY-T1-E3

SI4464DY-T1-E3
Mfr. #:
SI4464DY-T1-E3
Produttore:
Vishay
Descrizione:
MOSFET N-CH 200V 1.7A 8-SOIC
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SI4464DY-T1-E3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
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ECAD Model:
Maggiori informazioni:
SI4464DY-T1-E3 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
Vishay Siliconix
categoria di prodotto
FET - Single
Serie
TrinceaFETR
Confezione
Imballaggio alternativo Digi-ReelR
Alias ​​parziali
SI4464DY-T1
Unità di peso
0.006596 oz
Stile di montaggio
SMD/SMT
Nome depositato
TrenchFET
Pacchetto-Custodia
8-SOIC (0.154", 3.90mm Width)
Tecnologia
si
Temperatura di esercizio
-55°C ~ 150°C (TJ)
Tipo di montaggio
Montaggio superficiale
Numero di canali
1 Channel
Pacchetto-dispositivo-fornitore
8-SO
Configurazione
Separare
Tipo FET
MOSFET N-Channel, ossido di metallo
Potenza-Max
1.5W
Tipo a transistor
1 N-Channel
Drain-to-Source-Voltage-Vdss
200V
Ingresso-Capacità-Ciss-Vds
-
Funzione FET
Standard
Corrente-Continuo-Scarico-Id-25°C
1.7A (Ta)
Rds-On-Max-Id-Vgs
240 mOhm @ 2.2A, 10V
Vgs-th-Max-Id
4V @ 250μA
Gate-Carica-Qg-Vgs
18nC @ 10V
Pd-Power-Dissipazione
1.5 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
12 ns
Ora di alzarsi
12 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
1.7 A
Vds-Drain-Source-Breakdown-Voltage
200 V
Rds-On-Drain-Source-Resistenza
240 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
15 ns
Tempo di ritardo all'accensione tipico
10 ns
Modalità canale
Aumento
Tags
SI4464DY-T1, SI4464D, SI4464, SI446, SI44, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Parte # Mfg. Descrizione Azione Prezzo
SI4464DY-T1-E3
DISTI # SI4464DY-T1-E3CT-ND
Vishay SiliconixMOSFET N-CH 200V 1.7A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
12459In Stock
  • 1000:$0.5646
  • 500:$0.7151
  • 100:$0.9221
  • 10:$1.1670
  • 1:$1.3200
SI4464DY-T1-E3
DISTI # SI4464DY-T1-E3DKR-ND
Vishay SiliconixMOSFET N-CH 200V 1.7A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
12459In Stock
  • 1000:$0.5646
  • 500:$0.7151
  • 100:$0.9221
  • 10:$1.1670
  • 1:$1.3200
SI4464DY-T1-E3
DISTI # SI4464DY-T1-E3TR-ND
Vishay SiliconixMOSFET N-CH 200V 1.7A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
10000In Stock
  • 2500:$0.5116
SI4464DY-T1-E3
DISTI # SI4464DY-T1-E3
Vishay IntertechnologiesTrans MOSFET N-CH 200V 1.7A 8-Pin SOIC N T/R (Alt: SI4464DY-T1-E3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Europe - 0
  • 2500:€0.7209
  • 5000:€0.4919
  • 10000:€0.4229
  • 15000:€0.3909
  • 25000:€0.3639
SI4464DY-T1-E3
DISTI # SI4464DY-T1-E3
Vishay IntertechnologiesTrans MOSFET N-CH 200V 1.7A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4464DY-T1-E3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 2500:$0.4519
  • 5000:$0.4389
  • 10000:$0.4209
  • 15000:$0.4089
  • 25000:$0.3979
SI4464DY-T1-E3
DISTI # 35K3467
Vishay IntertechnologiesN CH MOSFET, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:1.7A,Drain Source Voltage Vds:200V,On Resistance Rds(on):195mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:2.5W , RoHS Compliant: Yes0
  • 1:$0.6250
  • 2500:$0.6200
  • 5000:$0.6020
  • 10000:$0.5790
SI4464DY-T1-E3
DISTI # 06J7747
Vishay IntertechnologiesN CHANNEL MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:1.7A,Drain Source Voltage Vds:200V,On Resistance Rds(on):195mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:2.5W , RoHS Compliant: Yes0
  • 1:$1.4000
  • 10:$1.1500
  • 25:$1.0600
  • 50:$0.9710
  • 100:$0.8820
  • 250:$0.8200
  • 500:$0.7580
SI4464DY-T1-E3
DISTI # 70026108
Vishay SiliconixMOSFET,Power,N-Ch,VDSS 200V,RDS(ON) 0.195Ohm,ID 1.7A,SO-8,PD 1.5W,VGS +/-20V
RoHS: Compliant
1091
  • 1:$0.9700
  • 25:$0.9300
  • 100:$0.8500
  • 250:$0.8000
  • 500:$0.7300
SI4464DY-T1-E3
DISTI # 781-SI4464DY-T1-E3
Vishay IntertechnologiesMOSFET 200V Vds 20V Vgs SO-8
RoHS: Compliant
1514
  • 1:$1.4000
  • 10:$1.1500
  • 100:$0.8820
  • 500:$0.7580
  • 1000:$0.5990
  • 2500:$0.5590
  • 5000:$0.5310
  • 10000:$0.5190
SI4464DY-T1-E3Vishay Intertechnologies 
RoHS: Compliant
2250Cut Tape/Mini-Reel
  • 1:$0.7300
  • 250:$0.6300
  • 500:$0.6200
  • 750:$0.6150
  • 1500:$0.5950
SI4464DY-T1-E3Vishay IntertechnologiesSingle N-Channel 200 V 0.24 Ohms Surface Mount Power Mosfet - SOIC-8
RoHS: Compliant
12500Reel
  • 2500:$0.5350
SI4464DY-T1-E3Vishay Intertechnologies 2068
    SI4464DY-T1-E3Vishay IntertechnologiesINSTOCK2910
      SI4464DY-T1-E3Vishay SemiconductorsINSTOCK2910
        SI4464DY-T1-E3
        DISTI # XSFP00000063472
        Vishay Siliconix 
        RoHS: Compliant
        6680
        • 2500:$1.4600
        • 6680:$1.3300
        Immagine Parte # Descrizione
        SI4464DY-T1-E3

        Mfr.#: SI4464DY-T1-E3

        OMO.#: OMO-SI4464DY-T1-E3

        MOSFET 200V Vds 20V Vgs SO-8
        SI4464DY-T1-GE3

        Mfr.#: SI4464DY-T1-GE3

        OMO.#: OMO-SI4464DY-T1-GE3

        MOSFET 200V Vds 20V Vgs SO-8
        SI4464DY-T1-E3-CUT TAPE

        Mfr.#: SI4464DY-T1-E3-CUT TAPE

        OMO.#: OMO-SI4464DY-T1-E3-CUT-TAPE-1190

        Nuovo e originale
        SI4464DY-T1

        Mfr.#: SI4464DY-T1

        OMO.#: OMO-SI4464DY-T1-1190

        Nuovo e originale
        SI4464DY-T1-E3

        Mfr.#: SI4464DY-T1-E3

        OMO.#: OMO-SI4464DY-T1-E3-VISHAY

        MOSFET N-CH 200V 1.7A 8-SOIC
        SI4464DY-T1-GE3

        Mfr.#: SI4464DY-T1-GE3

        OMO.#: OMO-SI4464DY-T1-GE3-VISHAY

        MOSFET N-CH 200V 1.7A 8-SOIC
        SI4464DY-TI-E3

        Mfr.#: SI4464DY-TI-E3

        OMO.#: OMO-SI4464DY-TI-E3-1190

        Nuovo e originale
        Disponibilità
        Azione:
        Available
        Su ordine:
        3500
        Inserisci la quantità:
        Il prezzo attuale di SI4464DY-T1-E3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
        Prezzo di riferimento (USD)
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        est. Prezzo
        1
        0,60 USD
        0,60 USD
        10
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        5,68 USD
        100
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        254,25 USD
        1000
        0,48 USD
        478,60 USD
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