SI7922DN-T1-E3

Mfr. #:: SI7922DN-T1-E3
Produttore:: Vishay
Descrizione:: IGBT Transistors MOSFET DUAL N-CH 100V (D-S)
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: SI7922DN-T1-E3 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
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Maggiori informazioni:: SI7922DN-T1-E3 maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore: VISHAY

categoria di prodotto: FET - Array

Serie: TrinceaFETR

Confezione: Imballaggio alternativo Digi-ReelR

Alias parziali: SI7922DN-T1

Stile di montaggio: SMD/SMT

Pacchetto-Custodia: PowerPAKR 1212-8 Dual

Tecnologia: si

Temperatura di esercizio: -55°C ~ 150°C (TJ)

Tipo di montaggio: Montaggio superficiale

Numero di canali: 2 Channel

Pacchetto-dispositivo-fornitore: PowerPAKR 1212-8 Dual

Configurazione: Dual

Tipo FET: 2 N-Channel (Dual)

Potenza-Max: 1.3W

Tipo a transistor: 2 N-Channel

Drain-to-Source-Voltage-Vdss: 100V

Ingresso-Capacità-Ciss-Vds: -

Funzione FET: Porta livello logico

Corrente-Continuo-Scarico-Id-25°C: 1.8A

Rds-On-Max-Id-Vgs: 195 mOhm @ 2.5A, 10V

Vgs-th-Max-Id: 3.5V @ 250μA

Gate-Carica-Qg-Vgs: 8nC @ 10V

Pd-Power-Dissipazione: 1.3 W

Massima temperatura di esercizio: + 150 C

Temperatura di esercizio minima: - 55 C

Tempo di caduta: 11 ns

Ora di alzarsi: 11 ns

Vgs-Gate-Source-Voltage: 20 V

Id-Continuo-Scarico-Corrente: 1.8 A

Vds-Drain-Source-Breakdown-Voltage: 100 V

Rds-On-Drain-Source-Resistenza: 195 mOhms

Polarità del transistor: Canale N

Tempo di ritardo allo spegnimento tipico: 8 ns

Tempo di ritardo all'accensione tipico: 7 ns

Modalità canale: Aumento

Tags: SI7922DN-T, SI7922D, SI7922, SI792, SI79, SI7

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We provide 90-360 days warranty.

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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI7922DN-T1-E3 Maggiori informazioni

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
SI7922DN-T1-E3 DISTI # SI7922DN-T1-E3TR-ND	Vishay Siliconix	MOSFET 2N-CH 100V 1.8A 1212-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$0.8465
SI7922DN-T1-E3 DISTI # SI7922DN-T1-E3CT-ND	Vishay Siliconix	MOSFET 2N-CH 100V 1.8A 1212-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.9364 500:$1.1302 100:$1.4531 10:$1.8080 1:$2.0000
SI7922DN-T1-E3 DISTI # SI7922DN-T1-E3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 100V 1.8A 1212-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.9364 500:$1.1302 100:$1.4531 10:$1.8080 1:$2.0000
SI7922DN-T1-E3 DISTI # SI7922DN-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 100V 1.8A 8-Pin PowerPAK 1212 T/R (Alt: SI7922DN-T1-E3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€1.5849 6000:€1.1108 12000:€0.9159 18000:€0.8129 30000:€0.7689
SI7922DN-T1-E3 DISTI # SI7922DN-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 100V 1.8A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7922DN-T1-E3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.8289 6000:$0.8049 12000:$0.7719 18000:$0.7499 30000:$0.7299
SI7922DN-T1-E3 DISTI # 06J8182	Vishay Intertechnologies	DUAL N CHANNEL MOSFET, 100V, POWERPAK,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:2.5A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.162ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V , RoHS Compliant: Yes	0	1:$1.7800 25:$1.4800 50:$1.3100 100:$1.1400 250:$1.0700 500:$0.9980 1000:$0.8270
SI7922DN-T1-E3 DISTI # 73W9421	Vishay Intertechnologies	MOSFET, DUAL N CHANNEL, 100V, 0.162OHM, 1.8A, POWERPAK, FULL REEL,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:1.8A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.162ohm,Rds(on) Test Voltage Vgs:10V , RoHS Compliant: Yes	0	1:$0.8440 3000:$0.8380 6000:$0.7980 12000:$0.7070
SI7922DN-T1-E3 DISTI # 70026293	Vishay Siliconix	SI7922DN-T1-E3 Dual N-channel MOSFET Module,1.8 A,100 V,8-Pin PowerPAK 1212 RoHS: Compliant	0	3000:$0.9300 6000:$0.9200 9000:$0.8700
SI7922DN-T1-E3 DISTI # 781-SI7922DN-T1-E3	Vishay Intertechnologies	MOSFET 100V Vds 20V Vgs PowerPAK 1212-8 RoHS: Compliant	0	1:$1.7800 10:$1.4800 100:$1.1400 500:$0.9980 1000:$0.8270 3000:$0.7700
SI7922DN-T1-E3	Vishay Intertechnologies		145
SI7922DN-T1-E3	Vishay Intertechnologies	MOSFET 100V Vds 20V Vgs PowerPAK 1212-8	Americas -	3000:$0.7680 6000:$0.7180 12000:$0.6910
SI7922DN-T1-E3 DISTI # 1189340	Vishay Intertechnologies	DUAL N CH MOSFET, 100V, POWERPAK RoHS: Compliant	0	3000:£0.7270

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: SI7922DN-T1-E3 OMO.#: OMO-SI7922DN-T1-E3	MOSFET 100V Vds 20V Vgs PowerPAK 1212-8
	Mfr.#: SI7922DN-T1-GE3 OMO.#: OMO-SI7922DN-T1-GE3	MOSFET 100V Vds 20V Vgs PowerPAK 1212-8
	Mfr.#: SI7922DN-T1-GE3 OMO.#: OMO-SI7922DN-T1-GE3-VISHAY	IGBT Transistors MOSFET Dual N-Ch 100V 195 mohm @ 4.5V
	Mfr.#: SI7922DN-T1-E3 OMO.#: OMO-SI7922DN-T1-E3-VISHAY	IGBT Transistors MOSFET DUAL N-CH 100V (D-S)
	Mfr.#: SI7922DN-T1-E3-CUT TAPE OMO.#: OMO-SI7922DN-T1-E3-CUT-TAPE-1190	Nuovo e originale
	Mfr.#: SI7922DN OMO.#: OMO-SI7922DN-1190	MOSFET, DUAL, NN, POWERPAK
	Mfr.#: SI7922DN-T1 OMO.#: OMO-SI7922DN-T1-1190	MOSFET Transistor, Matched Pair, N-Channel, LLCC

Disponibilità

Azione:: Available
Su ordine:: 4500
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Il prezzo attuale di SI7922DN-T1-E3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~1,04 USD~~; ~~1,04 USD~~

10: ~~0,98 USD~~; ~~9,85 USD~~

100: ~~0,93 USD~~; ~~93,29 USD~~

500: ~~0,88 USD~~; ~~440,50 USD~~

1000: ~~0,83 USD~~; ~~829,20 USD~~

Iniziare con

SI7922DN-T 4
SI7922D 5
SI7922 6
SI792 14
SI79 142
SI7 1547

SI7922DN-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes