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IRFHM830DTRPBF

IRFHM830DTRPBF
Mfr. #:
IRFHM830DTRPBF
Produttore:
Infineon Technologies
Descrizione:
Darlington Transistors MOSFET MOSFT 30V 40A 4.3mOhm 1.1Ohm RG
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IRFHM830DTRPBF Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore
Raddrizzatore internazionale
categoria di prodotto
Transistor - FET, MOSFET - Singoli
Confezione
Bobina
Stile di montaggio
SMD/SMT
Pacchetto-Custodia
PQFN-8
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Singola Quad Scarico Tripla Sorgente
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
2.8 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
6.7 ns
Ora di alzarsi
20 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
20 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Vgs-th-Gate-Sorgente-Soglia-Tensione
1.8 V
Rds-On-Drain-Source-Resistenza
5.7 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
9.1 ns
Tempo di ritardo all'accensione tipico
9.8 ns
Qg-Gate-Carica
13 nC
Transconduttanza diretta-Min
69 S
Modalità canale
Aumento
Tags
IRFHM830DT, IRFHM830D, IRFHM830, IRFHM83, IRFHM8, IRFHM, IRFH, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PG-TSDSON-8, RoHS
***(Formerly Allied Electronics)
MOSFET, 30V, 40A, 4.3 MOHM, 13 NC QG, 1.1 OHM RG, MONOFETKY, PQFN 3.3X3.3
***ment14 APAC
MOSFET,N CH,SCH DIODE,30V,20A,PQFN33; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):3400µohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:2.8W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:20A; Power Dissipation Pd:2.8W; Voltage Vgs Max:20V
***ineon
Benefits: RoHS Compliant; Low Thermal Resistance to PCB (less than 3.4C/W); Low Profile (less than 1.0 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Schottky intrinsic diode with low forward voltage; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET
***ure Electronics
Single N-Channel 30 V 6 mOhm 15 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PG-TSDSON-8, RoHS
***Yang
Trans MOSFET N-CH 30V 21A 8-Pin PQFN EP T/R - Tape and Reel
***nell
MOSFET,N CH,DIODE,30V,21A,PQFN33; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.003ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (18-Jun-2012); Current Id Max:21A; Voltage Vgs Max:20V
***ineon
Benefits: RoHS Compliant; Low Profile (less than 1.0 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET
***ernational Rectifier
25V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package
***(Formerly Allied Electronics)
MOSFET, 25V, 51A, 6 mOhm, 7 nC Qg, Low Rg, PQFN
***ment14 APAC
MOSFET, N CH, 25V, 51A, PQFN56; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:25V; On Resistance Rds(on):5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:26W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:51A; Power Dissipation Pd:26W; Voltage Vgs Max:20V
*** Electronics
INFINEON IRLHM630TRPBF MOSFET Transistor, N Channel, 21 A, 30 V, 2.8 mohm, 4.5 V, 800 mV
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a PQFN 3.3 by 3.3 package, PG-TSDSON-8, RoHS
***roFlash
Single N-Channel 20 V 4.5 mOhm 41 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
*** Source Electronics
Battery Operated DC Motor Inverter MOSFET | MOSFET N-CH 30V 21A PQFN
***Yang
Trans MOSFET N-CH 30V 21A 8-Pin PQFN EP T/R - Tape and Reel
***nell
MOSFET,N CH,DIODE,30V,21A,PQFN33; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2800µohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:800mV; Power Dissipation Pd:2.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (18-Jun-2012); Current Id Max:21A; Voltage Vgs Max:12V
***ineon
Benefits: RoHS Compliant; Low RDS(on); Low Thermal Resistance to PCB (less than 3.4C/W); Low Profile (less than 1.0 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Operated Drive; Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 40 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 4.5 / Gate-Source Voltage V = 12 / Fall Time ns = 43 / Rise Time ns = 32 / Turn-OFF Delay Time ns = 65 / Turn-ON Delay Time ns = 9.1 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = PQFN / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 37
Parte # Mfg. Descrizione Azione Prezzo
IRFHM830DTRPBF
DISTI # V72:2272_13891074		Infineon Technologies AGTrans MOSFET N-CH 30V 20A 8-Pin PQFN EP T/R
RoHS: Compliant		1703
  • 75000:$0.5489
  • 30000:$0.5491
  • 15000:$0.5499
  • 6000:$0.5558
  • 3000:$0.5616
  • 1000:$0.5633
  • 500:$0.5860
  • 250:$0.6596
  • 100:$0.7208
  • 50:$0.7680
  • 25:$0.8785
  • 10:$0.9017
  • 1:$1.0073
IRFHM830DTRPBF
DISTI # IRFHM830DTRPBF-ND		Infineon Technologies AGMOSFET N-CH 30V 20A PQFN
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		Limited Supply - Call
    IRFHM830DTRPBF
    DISTI # 26196361    		Infineon Technologies AGTrans MOSFET N-CH 30V 20A 8-Pin PQFN EP T/R
    RoHS: Compliant    		1703
    • 1000:$0.5633
    • 500:$0.5860
    • 250:$0.6596
    • 100:$0.7208
    • 50:$0.7680
    • 25:$0.8785
    • 14:$0.9017
    IRFHM830DTRPBF
    DISTI # 70019948    		Infineon Technologies AGMOSFET,30V,40A,4.3 MOHM,13 NC QG,1.1 OHM RG,MONOFETKY,PQFN 3.3X3.3
    RoHS: Compliant    		0
    • 4000:$1.5400
    • 8000:$1.5090
    • 20000:$1.4630
    • 40000:$1.4010
    • 100000:$1.3090
    IRFHM830DTRPBF
    DISTI # 942-IRFHM830DTRPBF    		Infineon Technologies AGMOSFET MOSFT 30V 40A 4.3mOhm 1.1Ohm RG
    RoHS: Compliant    		0
      IRFHM830DTRPBFInternational Rectifier 576
      • 501:$1.0712
      • 232:$1.2010
      • 1:$2.5968
      IRFHM830DTRPBF
      DISTI # 1857345      		Infineon Technologies AGMOSFET,N CH,SCH DIODE,30V,20A,PQFN33
      RoHS: Compliant      		0
      • 1:$1.9100
      • 10:$1.6100
      • 100:$1.2500
      • 500:$1.1100
      • 1000:$0.9440
      IRFHM830DTRPBF
      DISTI # C1S322000595279      		Infineon Technologies AGTrans MOSFET N-CH 30V 20A 8-Pin PQFN EP T/R
      RoHS: Compliant      		1703
      • 100:$0.7208
      • 50:$0.7680
      • 25:$0.8785
      • 10:$0.9017
      Immagine Parte # Descrizione
      IRFHM8334TRPBF

      Mfr.#: IRFHM8334TRPBF

      OMO.#: OMO-IRFHM8334TRPBF

      		 MOSFET 30V SGL N-CH HEXFET Pwr MOSFET
      IRFHM8330TRPBF

      Mfr.#: IRFHM8330TRPBF

      OMO.#: OMO-IRFHM8330TRPBF

      		 MOSFET 30V SGL N-CH HEXFET Pwr MOSFET
      IRFHM830TR2PBF

      Mfr.#: IRFHM830TR2PBF

      OMO.#: OMO-IRFHM830TR2PBF

      		 MOSFET MOSFT 30V 40A 3.8mOhm
      IRFHM8334TRPBF

      Mfr.#: IRFHM8334TRPBF

      OMO.#: OMO-IRFHM8334TRPBF-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 30V 13A 8PQFN
      IRFHM830DTRPBF.

      Mfr.#: IRFHM830DTRPBF.

      OMO.#: OMO-IRFHM830DTRPBF--1190

      		 Nuovo e originale
      IRFHM830TRPBF

      Mfr.#: IRFHM830TRPBF

      OMO.#: OMO-IRFHM830TRPBF-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 30V 21A PQFN
      IRFHM831TR2PBF

      Mfr.#: IRFHM831TR2PBF

      OMO.#: OMO-IRFHM831TR2PBF-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 30V 14A PQFN
      IRFHM8329TRPBF

      Mfr.#: IRFHM8329TRPBF

      OMO.#: OMO-IRFHM8329TRPBF-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 30V 16A PQFN
      IRFHM8330TRPBF

      Mfr.#: IRFHM8330TRPBF

      OMO.#: OMO-IRFHM8330TRPBF-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 30V 16A 8PQFN
      IRFHM8337TRPBF

      Mfr.#: IRFHM8337TRPBF

      OMO.#: OMO-IRFHM8337TRPBF-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 30V 12A 8PQFN
      Disponibilità
      Azione:
      Available
      Su ordine:
      2500
      Inserisci la quantità:
      Il prezzo attuale di IRFHM830DTRPBF è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
      Prezzo di riferimento (USD)
      Quantità
      Prezzo unitario
      est. Prezzo
      1
      0,65 USD
      0,65 USD
      10
      0,62 USD
      6,22 USD
      100
      0,59 USD
      58,91 USD
      500
      0,56 USD
      278,20 USD
      1000
      0,52 USD
      523,70 USD
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