HGTG12N60C3DR

HGTG12N60C3DR
Mfr. #:
HGTG12N60C3DR
Produttore:
Rochester Electronics, LLC
Descrizione:
Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
HGTG12N60C3DR Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Tags
HGTG12N, HGTG12, HGTG1, HGTG, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key Marketplace
UFS SERIES N-CHANNEL IGBT
Parte # Mfg. Descrizione Azione Prezzo
HGTG12N60C3DRHarris Semiconductor24A, 600V, RUGGED, UFS SERIES N-CHANNEL IGBT WITH ANTI-PARALLEL ULTRAFAST DIODE
RoHS: Not Compliant
659
  • 1000:$2.0400
  • 500:$2.1400
  • 100:$2.2300
  • 25:$2.3300
  • 1:$2.5100
Immagine Parte # Descrizione
HGTG12N60A4D

Mfr.#: HGTG12N60A4D

OMO.#: OMO-HGTG12N60A4D

IGBT Transistors 600V N-Channel IGBT SMPS Series
HGTG120N60B3D

Mfr.#: HGTG120N60B3D

OMO.#: OMO-HGTG120N60B3D-1190

Nuovo e originale
HGTG12N60A4

Mfr.#: HGTG12N60A4

OMO.#: OMO-HGTG12N60A4-ON-SEMICONDUCTOR

IGBT 600V 54A 167W TO247
HGTG12N60A4D,12N60A4D,12

Mfr.#: HGTG12N60A4D,12N60A4D,12

OMO.#: OMO-HGTG12N60A4D-12N60A4D-12-1190

Nuovo e originale
HGTG12N60A4D,HGTG10N120B

Mfr.#: HGTG12N60A4D,HGTG10N120B

OMO.#: OMO-HGTG12N60A4D-HGTG10N120B-1190

Nuovo e originale
HGTG12N60A4D,HGTG10N120BND,

Mfr.#: HGTG12N60A4D,HGTG10N120BND,

OMO.#: OMO-HGTG12N60A4D-HGTG10N120BND--1190

Nuovo e originale
HGTG12N60A4D-NL

Mfr.#: HGTG12N60A4D-NL

OMO.#: OMO-HGTG12N60A4D-NL-1190

Nuovo e originale
HGTG12N60A4_NL

Mfr.#: HGTG12N60A4_NL

OMO.#: OMO-HGTG12N60A4-NL-1190

Nuovo e originale
HGTG12N60B3

Mfr.#: HGTG12N60B3

OMO.#: OMO-HGTG12N60B3-ON-SEMICONDUCTOR

IGBT 600V 27A 104W TO247
HGTG12N60C3DR

Mfr.#: HGTG12N60C3DR

OMO.#: OMO-HGTG12N60C3DR-1190

Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel
Disponibilità
Azione:
Available
Su ordine:
1000
Inserisci la quantità:
Il prezzo attuale di HGTG12N60C3DR è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
3,06 USD
3,06 USD
10
2,91 USD
29,07 USD
100
2,75 USD
275,40 USD
500
2,60 USD
1 300,50 USD
1000
2,45 USD
2 448,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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