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IRF630NPBF

IRF630NPBF
Mfr. #:
IRF630NPBF
Produttore:
Infineon Technologies
Descrizione:
MOSFET N-CH 200V 9.3A TO-220AB
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IRF630NPBF Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
IRF630NPBF maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
IR
categoria di prodotto
FET - Single
Confezione
Tubo
Unità di peso
0.211644 oz
Stile di montaggio
Foro passante
Pacchetto-Custodia
TO-220-3
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Separare
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
82 W
Massima temperatura di esercizio
+ 175 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
15 ns
Ora di alzarsi
14 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
9.3 A
Vds-Drain-Source-Breakdown-Voltage
200 V
Rds-On-Drain-Source-Resistenza
300 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
27 ns
Tempo di ritardo all'accensione tipico
7.9 ns
Qg-Gate-Carica
23.3 nC
Transconduttanza diretta-Min
4.9 S
Modalità canale
Aumento
Tags
IRF630NP, IRF630N, IRF630, IRF63, IRF6, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
200-250V HEXFET® Power MOSFETs
Infineon 200-250V HEXFET® Power MOSFETs offer a broad range of MOSFETs in various packages, current and RDS(on) ratings. These 200-250V HEXFET® Power MOSFETs utilize the latest processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Infineon HEXFET® Power MOSFETs are known for provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.Learn More
Parte # Mfg. Descrizione Azione Prezzo
IRF630NPBF
DISTI # V36:1790_13890561		Infineon Technologies AGTrans MOSFET N-CH Si 200V 9.3A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		2946
  • 1000:$0.3602
  • 500:$0.4242
  • 100:$0.4979
  • 10:$0.6250
  • 1:$0.7082
IRF630NPBF
DISTI # V99:2348_13890561		Infineon Technologies AGTrans MOSFET N-CH Si 200V 9.3A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		707
  • 1000:$0.3602
  • 500:$0.4242
  • 100:$0.4979
  • 10:$0.6250
  • 1:$0.7082
IRF630NPBF
DISTI # IRF630NPBF-ND		Infineon Technologies AGMOSFET N-CH 200V 9.3A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		639In Stock
  • 1000:$0.4125
  • 500:$0.5225
  • 100:$0.6738
  • 10:$0.8530
  • 1:$0.9600
IRF630NPBF
DISTI # 21061767		Infineon Technologies AGTrans MOSFET N-CH Si 200V 9.3A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		11530
  • 1000:$0.3004
  • 500:$0.3445
  • 100:$0.3877
IRF630NPBF
DISTI # 27128682		Infineon Technologies AGTrans MOSFET N-CH Si 200V 9.3A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		2946
  • 1000:$0.3602
  • 500:$0.4242
  • 100:$0.4979
  • 25:$0.6250
IRF630NPBF
DISTI # 30349950		Infineon Technologies AGTrans MOSFET N-CH Si 200V 9.3A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		707
  • 500:$0.4242
  • 100:$0.4979
  • 23:$0.6250
IRF630NPBF
DISTI # IRF630NPBF		Infineon Technologies AGTrans MOSFET N-CH 200V 9.3A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRF630NPBF)
RoHS: Compliant
Min Qty: 1
Container: Tube		Americas - 1317
  • 1:$0.4849
  • 10:$0.4569
  • 25:$0.4559
  • 50:$0.4539
  • 100:$0.4039
  • 500:$0.3589
  • 1000:$0.3129
IRF630NPBF
DISTI # IRF630NPBF		Infineon Technologies AGTrans MOSFET N-CH 200V 9.3A 3-Pin(3+Tab) TO-220AB (Alt: IRF630NPBF)
RoHS: Compliant
Min Qty: 1000		Asia - 0
    IRF630NPBF
    DISTI # SP001564792    		Infineon Technologies AGTrans MOSFET N-CH 200V 9.3A 3-Pin(3+Tab) TO-220AB (Alt: SP001564792)
    RoHS: Compliant
    Min Qty: 1    		Europe - 0
    • 1:€0.4839
    • 10:€0.4519
    • 25:€0.4509
    • 50:€0.4499
    • 100:€0.3989
    • 500:€0.3479
    • 1000:€0.3159
    IRF630NPBF
    DISTI # 63J7338    		Infineon Technologies AGN CHANNEL MOSFET, 200V, 9.3A, TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:9.3A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.3ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,MSL:- RoHS Compliant: Yes355
    • 1:$1.0000
    • 10:$0.8600
    • 100:$0.6750
    • 500:$0.6040
    • 1000:$0.4900
    • 2500:$0.4420
    • 10000:$0.4270
    IRF630NPBF.
    DISTI # 26AC0605    		Infineon Technologies AGN CHANNEL MOSFET, 200V, 9.3A, TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:9.3A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.3ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,MSL:- RoHS Compliant: Yes0
    • 1:$1.0200
    • 10:$0.8770
    • 100:$0.6890
    • 500:$0.6040
    • 1000:$0.4900
    • 2500:$0.4420
    • 10000:$0.4270
    IRF630NPBF
    DISTI # 70017265    		Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 200V,RDS(ON) 0.3Ohm,ID 9.3A,TO-220AB,PD 82W,VGS +/-20V
    RoHS: Compliant    		194
    • 1:$0.8450
    • 10:$0.7450
    • 100:$0.6500
    • 500:$0.5630
    • 1000:$0.4970
    IRF630NPBF
    DISTI # 942-IRF630NPBF    		Infineon Technologies AGMOSFET MOSFT 200V 9.5A 300mOhm 23.3nC
    RoHS: Compliant    		6088
    • 1:$0.8300
    • 10:$0.7000
    • 100:$0.5380
    • 500:$0.4760
    • 1000:$0.3750
    • 2000:$0.3330
    IRF630NPBFInfineon Technologies AGPower Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    RoHS: Compliant    		45
    • 1000:$0.2900
    • 500:$0.3100
    • 100:$0.3200
    • 25:$0.3300
    • 1:$0.3600
    IRF630NPBFInfineon Technologies AGSingle N-Channel 200 V 0.3 Ohm 35 nC HEXFET Power Mosfet - TO-220-3
    RoHS: Compliant    		10757Tube
    • 30:$0.3850
    • 300:$0.3450
    • 1750:$0.2950
    IRF630NPBF
    DISTI # 5430068    		Infineon Technologies AGMOSFET N-CHANNEL 200V 9.3A TO220AB, EA4885
    • 1:£2.0000
    • 20:£0.4300
    • 25:£0.4000
    IRF630NPBF
    DISTI # 9195025    		Infineon Technologies AGMOSFET N-CHANNEL 200V 9.3A TO220AB, TU450
    • 50:£0.4440
    • 250:£0.3770
    • 1000:£0.2970
    • 2500:£0.2640
    IRF630NPBFInternational Rectifier9.3A, 200V, 0.3OHM, N-CHANNEL, SI, POWER, MOSFET, TO-220AB29
    • 28:$0.5000
    • 6:$0.7500
    • 1:$1.0000
    IRF630NPBF
    DISTI # IRF630NPBF    		Infineon Technologies AGTransistor: N-MOSFET,unipolar,200V,9.5A,82W,TO220AB807
    • 1:$0.7900
    • 3:$0.5240
    • 10:$0.4217
    • 100:$0.3603
    IRF630NPBF
    DISTI # IRF630NPBF    		Infineon Technologies AGN-Ch 200V 9,3A 82W 0,3R TO220AB
    RoHS: Compliant    		3000
    • 10:€0.5880
    • 50:€0.3480
    • 200:€0.2880
    • 500:€0.2775
    IRF630NPBFInfineon Technologies AGINSTOCK1748
      IRF630NPBF
      DISTI # XSLY00000000764      		INFINEON/IRTO-220AB
      RoHS: Compliant      		14076
      • 2350:$0.3029
      • 14076:$0.2827
      IRF630NPBF
      DISTI # XSFP00000008771      		Infineon Technologies AGPower Field-Effect Transistor, 13AI(D),30V,0.011ohm, 1-Element,N-Channel,Silicon,Metal-oxide Semiconductor FET,MS-012AA
      RoHS: Compliant      		8518
      • 300:$0.5133
      • 8518:$0.4812
      IRF630NPBF
      DISTI # C1S322000599628      		Infineon Technologies AGTrans MOSFET N-CH Si 200V 9.3A 3-Pin(3+Tab) TO-220AB Tube
      RoHS: Compliant      		3033
      • 1000:$0.3602
      • 500:$0.4242
      • 100:$0.4979
      • 10:$0.6250
      IRF630NPBF
      DISTI # C1S327400157735      		Infineon Technologies AGTrans MOSFET N-CH Si 200V 9.3A 3-Pin(3+Tab) TO-220AB Tube
      RoHS: Compliant      		3950
      • 100:$0.6930
      • 50:$0.7940
      • 10:$1.1800
      • 5:$1.3800
      IRF630NPBF
      DISTI # C1S322000481417      		Infineon Technologies AGTrans MOSFET N-CH Si 200V 9.3A 3-Pin(3+Tab) TO-220AB Tube
      RoHS: Compliant      		11530
      • 1000:$0.4610
      • 500:$0.5020
      • 100:$0.6110
      • 50:$0.6850
      • 25:$0.7540
      • 5:$1.8800
      IRF630NPBF
      DISTI # 8648344      		Infineon Technologies AGMOSFET, N, 200V, 9.5A, TO-220
      RoHS: Compliant      		2509
      • 5:£0.4390
      • 25:£0.4080
      • 100:£0.3970
      • 250:£0.3850
      • 500:£0.3270
      IRF630NPBFInfineon Technologies AG200V,300m,9.3A,N-Channel Power MOSFET800
      • 1:$0.5800
      • 100:$0.4900
      • 500:$0.4300
      • 1000:$0.4200
      IRF630NPBF
      DISTI # 8648344      		Infineon Technologies AGMOSFET, N, 200V, 9.5A, TO-220
      RoHS: Compliant      		2794
      • 1:$1.3800
      • 10:$1.1800
      • 100:$0.8990
      • 500:$0.7950
      • 1000:$0.6270
      • 2000:$0.5570
      Immagine Parte # Descrizione
      IRF634STRRPBF

      Mfr.#: IRF634STRRPBF

      OMO.#: OMO-IRF634STRRPBF

      		 MOSFET N-Chan 250V 8.1 Amp
      IRF630NSTRRPBF

      Mfr.#: IRF630NSTRRPBF

      OMO.#: OMO-IRF630NSTRRPBF

      		 MOSFET 200V 1 N-CH HEXFET 300mOhms 23.3nC
      IRF634B-FP001

      Mfr.#: IRF634B-FP001

      OMO.#: OMO-IRF634B-FP001-ON-SEMICONDUCTOR

      		 MOSFET N-CH 250V 8.1A TO-220
      IRF630NSTRR

      Mfr.#: IRF630NSTRR

      OMO.#: OMO-IRF630NSTRR-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 200V 9.3A D2PAK
      IRF630STRPBF

      Mfr.#: IRF630STRPBF

      OMO.#: OMO-IRF630STRPBF-1190

      		 Nuovo e originale
      IRF633A

      Mfr.#: IRF633A

      OMO.#: OMO-IRF633A-1190

      		 Nuovo e originale
      IRF634B,IRF634A

      Mfr.#: IRF634B,IRF634A

      OMO.#: OMO-IRF634B-IRF634A-1190

      		 Nuovo e originale
      IRF634B,IRF634FP,IRF640,

      Mfr.#: IRF634B,IRF634FP,IRF640,

      OMO.#: OMO-IRF634B-IRF634FP-IRF640--1190

      		 Nuovo e originale
      IRF630NSPBF

      Mfr.#: IRF630NSPBF

      OMO.#: OMO-IRF630NSPBF-INFINEON-TECHNOLOGIES

      		 Darlington Transistors MOSFET 200V 1 N-CH HEXFET 300mOhms 23.3nC
      IRF630STRRPBF

      Mfr.#: IRF630STRRPBF

      OMO.#: OMO-IRF630STRRPBF-VISHAY

      		 IGBT Transistors MOSFET N-Chan 200V 9.0 Amp
      Disponibilità
      Azione:
      Available
      Su ordine:
      4500
      Inserisci la quantità:
      Il prezzo attuale di IRF630NPBF è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
      Prezzo di riferimento (USD)
      Quantità
      Prezzo unitario
      est. Prezzo
      1
      0,38 USD
      0,38 USD
      10
      0,36 USD
      3,56 USD
      100
      0,34 USD
      33,75 USD
      500
      0,32 USD
      159,40 USD
      1000
      0,30 USD
      300,00 USD
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