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IPW65R660CFDFKSA1

IPW65R660CFDFKSA1
Mfr. #:
IPW65R660CFDFKSA1
Produttore:
Infineon Technologies
Descrizione:
MOSFET N-CH 700V 6A TO247
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IPW65R660CFDFKSA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Tags
IPW65R6, IPW65R, IPW65, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 30, Infineon IPW65R660CFDFKSA1 MOSFET
***ical
Trans MOSFET N-CH 650V 6A 3-Pin(3+Tab) TO-247 Tube
***et Europe
Trans MOSFET N-CH 700V 6A 3-Pin TO-247 Tube
***ark
MOSFET, N-CH, 650V, 6A, TO-247-3
***i-Key
MOSFET N-CH 700V 6A TO247
***ronik
CoolMOS 650V 6A 660mOhm TO247
***ineon
650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. | Summary of Features: 650V technology with integrated fast body diode; Limited voltage overshoot during hard commutation; Significant Q g reduction compared to 600V CFD technology; Tighter R DS(ON) max to R DS(on) typ window; Easy to design-in; Lower price compared to 600V CFD technology | Benefits: Low switching losses due to low Q rr at repetitive commutation on body diode; Self limiting di/dt and dv/dt; Low Q oss; Reduced turn on and turn of delay times; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; HID lamp ballast; LED lighting; eMobility
Parte # Mfg. Descrizione Azione Prezzo
IPW65R660CFDFKSA1
DISTI # V99:2348_06383160		Infineon Technologies AGTrans MOSFET N-CH 650V 6A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		140
  • 100:$1.7851
  • 25:$1.9090
  • 10:$2.1065
  • 1:$2.6004
IPW65R660CFDFKSA1
DISTI # IPW65R660CFDFKSA1-ND		Infineon Technologies AGMOSFET N-CH 700V 6A TO247
RoHS: Compliant
Min Qty: 240
Container: Tube		Limited Supply - Call
    IPW65R660CFDFKSA1
    DISTI # 26197576    		Infineon Technologies AGTrans MOSFET N-CH 650V 6A 3-Pin(3+Tab) TO-247 Tube
    RoHS: Compliant    		140
    • 100:$1.7851
    • 25:$1.9090
    • 10:$2.1065
    • 6:$2.6004
    IPW65R660CFDFKSA1
    DISTI # IPW65R660CFDFKSA1    		Infineon Technologies AG- Bulk (Alt: IPW65R660CFDFKSA1)
    RoHS: Compliant
    Min Qty: 358
    Container: Bulk    		Americas - 0
    • 3580:$0.8889
    • 1790:$0.9049
    • 1074:$0.9369
    • 716:$0.9719
    • 358:$1.0079
    IPW65R660CFDFKSA1
    DISTI # N/A    		Infineon Technologies AGMOSFET LOW POWER_LEGACY0
      IPW65R660CFD
      DISTI # 726-IPW65R660CFD      		Infineon Technologies AGMOSFET N-Ch 650V 6A TO247-3 CoolMOS CFD2
      RoHS: Compliant      		0
      • 1:$2.2500
      • 10:$1.9200
      • 100:$1.5300
      IPW65R660CFDFKSA1Infineon Technologies AGPower Field-Effect Transistor, 6A I(D), 650V, 0.66ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
      RoHS: Compliant      		14880
      • 1000:$0.9200
      • 500:$0.9700
      • 100:$1.0100
      • 25:$1.0500
      • 1:$1.1300
      IPW65R660CFDFKSA1
      DISTI # 8977655      		Infineon Technologies AGMOSFET N-CHANNEL 700V 6A COOLMOS TO247, PK130
      • 250:£1.0000
      • 100:£1.0580
      • 50:£1.1920
      • 10:£1.3240
      • 5:£1.6600
      IPW65R660CFDFKSA1
      DISTI # 2480876      		Infineon Technologies AGMOSFET, N-CH, 650V, 6A, TO-247-3
      RoHS: Compliant      		0
      • 100:$2.3600
      • 10:$2.9500
      • 1:$3.4600
      IPW65R660CFDFKSA1
      DISTI # 2480876      		Infineon Technologies AGMOSFET, N-CH, 650V, 6A, TO-247-30
      • 500:£1.1200
      • 250:£1.1500
      • 100:£1.1700
      • 10:£1.4700
      • 1:£1.9400
      Immagine Parte # Descrizione
      IPW65R660CFDFKSA1

      Mfr.#: IPW65R660CFDFKSA1

      OMO.#: OMO-IPW65R660CFDFKSA1-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 700V 6A TO247
      IPW65R660CFD 65F660

      Mfr.#: IPW65R660CFD 65F660

      OMO.#: OMO-IPW65R660CFD-65F660-1190

      		 Nuovo e originale
      IPW65R660CFD

      Mfr.#: IPW65R660CFD

      OMO.#: OMO-IPW65R660CFD-124

      		 Darlington Transistors MOSFET N-Ch 650V 6A TO247-3 CoolMOS CFD2
      Disponibilità
      Azione:
      Available
      Su ordine:
      3500
      Inserisci la quantità:
      Il prezzo attuale di IPW65R660CFDFKSA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
      Prezzo di riferimento (USD)
      Quantità
      Prezzo unitario
      est. Prezzo
      1
      1,33 USD
      1,33 USD
      10
      1,27 USD
      12,67 USD
      100
      1,20 USD
      120,00 USD
      500
      1,13 USD
      566,65 USD
      1000
      1,07 USD
      1 066,70 USD
      A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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