TC58NYG0S3HBAI6

TC58NYG0S3HBAI6
Mfr. #:
TC58NYG0S3HBAI6
Produttore:
Toshiba Memory
Descrizione:
EEPROM 1.8V, 1 Gbit CMOS NAND EEPROM
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
TC58NYG0S3HBAI6 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
TC58NYG0S3HBAI6 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
Toshiba Semiconductor e storage
categoria di prodotto
Memoria
Serie
-
Confezione
Vassoio
Pacchetto-Custodia
67-VFBGA
Temperatura di esercizio
-40°C ~ 85°C (TA)
Interfaccia
Parallelo
Tensione di alimentazione
1.7 V ~ 1.95 V
Pacchetto-dispositivo-fornitore
67-VFBGA (6.5x8)
Dimensione della memoria
1G (128M x 8)
Tipo di memoria
EEPROM - NAND
Velocità
25ns
Formato-Memoria
EEPROM - Seriale
Tags
TC58NYG0, TC58NYG, TC58NY, TC58N, TC58, TC5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    V***v
    V***v
    RU

    Ok

    2019-08-08
    V***o
    V***o
    RU

    Can't answer

    2019-05-01
    F***a
    F***a
    CZ

    Perfect product. I recommend.

    2019-06-29
    A***n
    A***n
    NG

    Well packaged. Fast shipping.

    2019-08-23
***akorn
NAND Flash Serial 1.8V 1G-bit 128M x 8 67-Pin VFBGA
***i-Key
IC EEPROM 1GBIT 25NS 67VFBGA
***et
1Gbit, generation: 24nm, VCC=1.7 to 1.95V
***S
vpe: 253/tray/bga
SLC NAND and BENAND
Toshiba SLC NAND and BENAND provide best-in-class endurance and data retention for sensitive or frequently used system data. Toshiba SLC are the optimal solution for long lasting products or systems working with extremely high data throughput between the host and the memory. 
Parte # Mfg. Descrizione Azione Prezzo
TC58NYG0S3HBAI6
DISTI # TC58NYG0S3HBAI6-ND
Toshiba Semiconductor and Storage ProductsIC FLASH 1G PARALLEL 67VFBGA
RoHS: Compliant
Min Qty: 338
Container: Tray
Temporarily Out of Stock
  • 338:$2.8107
TC58NYG0S3HBAI6
DISTI # TC58NYG0S3HBAI6
Toshiba America Electronic Components1Gbit, generation: 24nm, VCC=1.7 to 1.95V - Trays (Alt: TC58NYG0S3HBAI6)
RoHS: Compliant
Min Qty: 338
Container: Tray
Americas - 0
  • 338:$2.1900
  • 676:$2.1900
  • 1352:$2.0900
  • 2028:$2.0900
  • 3380:$2.0900
TC58NYG0S3HBAI6
DISTI # 757-TC58NYG0S3HBAI6
Toshiba America Electronic ComponentsNAND Flash 1.8V 1Gb 24nm I-Temp SLC NAND (EEPROM)
RoHS: Compliant
338
  • 1:$3.0600
  • 10:$2.7500
  • 50:$2.7000
  • 100:$2.4100
  • 250:$2.3400
  • 500:$2.3300
  • 1000:$2.1700
  • 2500:$2.1300
Immagine Parte # Descrizione
TC58NYG1S3HBAI4

Mfr.#: TC58NYG1S3HBAI4

OMO.#: OMO-TC58NYG1S3HBAI4

NAND Flash 1.8V 2Gb 24nm SLC NAND (EEPROM)
TC58NYG0S3EBAI4

Mfr.#: TC58NYG0S3EBAI4

OMO.#: OMO-TC58NYG0S3EBAI4

NAND Flash 1.8V 1Gb 43nm SLC NAND (EEPROM)
TC58NYG0S3EBAI4

Mfr.#: TC58NYG0S3EBAI4

OMO.#: OMO-TC58NYG0S3EBAI4-1151

SLC NAND Flash Serial 1.8V 1Gbit 128M x 8bit 63-Pin TFBGA - Trays (Alt: TC58NYG0S3EBAI4)
TC58NYG1S8EBAI4

Mfr.#: TC58NYG1S8EBAI4

OMO.#: OMO-TC58NYG1S8EBAI4-1190

Nuovo e originale
TC58NYG3S0FBAID

Mfr.#: TC58NYG3S0FBAID

OMO.#: OMO-TC58NYG3S0FBAID-1190

Nuovo e originale
TC58NYGOS3EBA14

Mfr.#: TC58NYGOS3EBA14

OMO.#: OMO-TC58NYGOS3EBA14-1190

Nuovo e originale
TC58NYG2S0HBAI6

Mfr.#: TC58NYG2S0HBAI6

OMO.#: OMO-TC58NYG2S0HBAI6-TOSHIBA-MEMORY-AMERICA

EEPROM 1.8V, 4 Gbit CMOS NAND EEPROM
TC58NYG0S3HBAI6

Mfr.#: TC58NYG0S3HBAI6

OMO.#: OMO-TC58NYG0S3HBAI6-TOSHIBA-MEMORY-AMERICA

EEPROM 1.8V, 1 Gbit CMOS NAND EEPROM
TC58NYG1S3HBAI4

Mfr.#: TC58NYG1S3HBAI4

OMO.#: OMO-TC58NYG1S3HBAI4-TOSHIBA-MEMORY-AMERICA

Flash Memory 2Gb 1.8V SLC NAND Flash Serial EEPROM
TC58NYG2S0HBAI4-ND

Mfr.#: TC58NYG2S0HBAI4-ND

OMO.#: OMO-TC58NYG2S0HBAI4-ND-1190

Nuovo e originale
Disponibilità
Azione:
Available
Su ordine:
3500
Inserisci la quantità:
Il prezzo attuale di TC58NYG0S3HBAI6 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
2,24 USD
2,24 USD
10
2,12 USD
21,23 USD
100
2,01 USD
201,15 USD
500
1,90 USD
949,90 USD
1000
1,79 USD
1 788,00 USD
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