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IRFH4251DTRPBF

IRFH4251DTRPBF
Mfr. #:
IRFH4251DTRPBF
Produttore:
Infineon Technologies
Descrizione:
MOSFET 2N-CH 25V 64A/188A PQFN
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IRFH4251DTRPBF Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
IRFH4251DTRPBF maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
Tecnologie Infineon
categoria di prodotto
FET - Array
Serie
FASTIRFE
Confezione
Imballaggio alternativo Digi-ReelR
Stile di montaggio
SMD/SMT
Nome depositato
FastIRFeet
Pacchetto-Custodia
8-PowerVDFN
Tecnologia
si
Temperatura di esercizio
-55°C ~ 150°C (TJ)
Tipo di montaggio
Montaggio superficiale
Numero di canali
2 Channel
Pacchetto-dispositivo-fornitore
PQFN (5x6)
Configurazione
Dual
Tipo FET
2 N-Channel (Dual), Schottky
Potenza-Max
31W, 63W
Tipo a transistor
2 N-Channel
Drain-to-Source-Voltage-Vdss
25V
Ingresso-Capacità-Ciss-Vds
1314pF @ 13V
Funzione FET
Porta livello logico
Corrente-Continuo-Scarico-Id-25°C
64A, 188A
Rds-On-Max-Id-Vgs
3.2 mOhm @ 30A, 10V
Vgs-th-Max-Id
2.1V @ 35μA
Gate-Carica-Qg-Vgs
15nC @ 4.5V
Pd-Power-Dissipazione
31 W 63 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
15 ns 60 ns
Ora di alzarsi
61 ns 105 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
64 A
Vds-Drain-Source-Breakdown-Voltage
25 V
Vgs-th-Gate-Sorgente-Soglia-Tensione
1.6 V
Rds-On-Drain-Source-Resistenza
3.2 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
13 ns 35 ns
Tempo di ritardo all'accensione tipico
10 ns 24 ns
Qg-Gate-Carica
15 nC 66 nC
Transconduttanza diretta-Min
131 S 161 S
Modalità canale
Aumento
Tags
IRFH4251, IRFH425, IRFH4, IRFH, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Dual N-Channel 25 V 3.2 mOhm 15 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
***ineon SCT
25V Dual N-Channel HEXFET Power MOSFET in a PQFN 5mm x 6mm Lead Free package, PG-TISON-8, RoHS
*** Source Electronics
Trans MOSFET N-CH 25V 64A/188A 8-Pin PQFN EP T/R / MOSFET 2N-CH 25V 64A/188A PQFN
***et Europe
Transistor MOSFET Array Dual N-CH 25V 188A 8-Pin PQFN T/R
***ied Electronics & Automation
MOSFET; 25V; 45 A Power Block in PQFN 5x6 package
***ineon
Benefits: RoHS Compliant; Qualified Industrial; Qualified MSL1; Dual N-Channel MOSFET; Control and Synchronous MOSFETs in one package; Low Charge Control MOSFET; Low Rdson Synchronous MOSFET; Intrinsic Schottky diode with Low Forward Voltage on Q2; FastIRFET | Target Applications: Point of Load
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Infineon IRFH42x HEXFET Power MOSFETs designed for 10-30A non-isolated DC-DC synchronous buck converters, in a single PQFN package. IRFH42x HEXFET Power MOSFETs deliver for the engineer who does not want any IC integration, but still wants best-in-class performance and an industry-stand footprint for multi-sourcing. Typical applications include advanced telecom and netcom equipment, servers, graphic cards, desktop, ultrabook and notebook computers.Learn More
FastIRFET™ Power MOSFETs
Infineon FastIRFET™ power MOSFET family offers benchmark performance with best-in-class R*Q figure of merit. The family features optimized packaging tailored to application requirements for size reduction. This IR family is ideal for high frequency applications requiring low switching loss or high light load efficiency. The FastIRFET series includes the IRFH7185TRPBF 100V single N-channel HEXFET power MOSFET designed for a variety of applications, including primary switch for high frequency 48V/60V telecom DC-DC power supplies, secondary side synchronous rectifier, and hot swap and active O-ring.Learn More
Parte # Mfg. Descrizione Azione Prezzo
IRFH4251DTRPBF
DISTI # 19262000		Infineon Technologies AGTrans MOSFET N-CH 25V 64A/188A 8-Pin PQFN EP T/R2806
  • 37:$1.7000
IRFH4251DTRPBF
DISTI # IRFH4251DTRPBFTR-ND		Infineon Technologies AGMOSFET 2N-CH 25V 64A/188A PQFN
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		Limited Supply - Call
  • 4000:$1.5142
IRFH4251DTRPBF
DISTI # IRFH4251DTRPBFCT-ND		Infineon Technologies AGMOSFET 2N-CH 25V 64A/188A PQFN
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    IRFH4251DTRPBF
    DISTI # IRFH4251DTRPBFDKR-ND    		Infineon Technologies AGMOSFET 2N-CH 25V 64A/188A PQFN
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      IRFH4251DTRPBF
      DISTI # IRFH4251DTRPBF      		Infineon Technologies AGTrans MOSFET N-CH 25V 64A/188A 8-Pin PQFN T/R (Alt: IRFH4251DTRPBF)
      RoHS: Compliant
      Min Qty: 4000
      Container: Tape and Reel      		Asia - 0
        IRFH4251DTRPBF
        DISTI # IRFH4251DTRPBF        		Infineon Technologies AGTrans MOSFET N-CH 25V 64A/188A 8-Pin PQFN T/R - Tape and Reel (Alt: IRFH4251DTRPBF)
        RoHS: Compliant
        Min Qty: 4000
        Container: Reel        		Americas - 0
        • 4000:$1.1929
        • 8000:$1.1499
        • 16000:$1.1079
        • 24000:$1.0709
        • 40000:$1.0519
        IRFH4251DTRPBF
        DISTI # SP001556236        		Infineon Technologies AGTrans MOSFET N-CH 25V 64A/188A 8-Pin PQFN T/R (Alt: SP001556236)
        RoHS: Compliant
        Min Qty: 4000
        Container: Tape and Reel        		Europe - 0
        • 4000:€1.5199
        • 8000:€1.2659
        • 16000:€1.1689
        • 24000:€1.0849
        • 40000:€1.0129
        IRFH4251DTRPBF
        DISTI # 19X2758        		Infineon Technologies AGMOSFET, DUAL N CHANNEL, 25V, 188A, PQFN-10,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:188A,Drain Source Voltage Vds:25V,On Resistance Rds(on):600µohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.6V RoHS Compliant: Yes2806
        • 1:$1.3600
        • 25:$1.3600
        • 50:$1.3600
        • 100:$1.3600
        • 250:$1.3600
        • 500:$1.3600
        • 1000:$1.3600
        IRFH4251DTRPBF
        DISTI # 70394809        		Infineon Technologies AGMOSFET,25V,45 A Power Block in PQFN 5x6 package
        RoHS: Compliant        		25
        • 1:$3.6700
        • 2:$3.5970
        • 5:$3.4870
        • 10:$3.3400
        • 25:$3.1200
        IRFH4251DTRPBFInfineon Technologies AGPower Field-Effect Transistor, 45A I(D), 25V, 0.0046ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
        RoHS: Compliant        		1917
        • 1000:$1.3700
        • 500:$1.4400
        • 100:$1.5000
        • 25:$1.5600
        • 1:$1.6800
        IRFH4251DTRPBF
        DISTI # 942-IRFH4251DTRPBF        		Infineon Technologies AGMOSFET 25V Dual N-Ch 1.10mOhm 44nC 45A
        RoHS: Compliant        		0
          IRFH4251DTRPBFInternational Rectifier 6166
          • 1132:$1.6074
          • 505:$1.7681
          • 1:$3.2148
          IRFH4251DTRPBF
          DISTI # IRFH4251DTRPBF          		Infineon Technologies AGTransistor: N-MOSFET,unipolar,25V,45A,31W,PQFN5X620
          • 1:$1.9800
          • 3:$1.7500
          • 10:$1.4700
          • 100:$1.2400
          IRFH4251DTRPBF
          DISTI # 2577149          		Infineon Technologies AG(Alternate Part Number: SP001556236
          RoHS: Compliant          		0
          • 1:$4.3400
          • 10:$3.6900
          • 100:$3.2000
          • 250:$3.0400
          • 500:$2.7200
          • 1000:$2.3300
          IRFH4251DTRPBF.
          DISTI # 2424263          		Infineon Technologies AGMOSFET, DUAL N CHANNEL, 25V, 188A, PQFN-
          RoHS: Compliant          		3406
          • 1:$2.5100
          Immagine Parte # Descrizione
          IRFH4253DTRPBF

          Mfr.#: IRFH4253DTRPBF

          OMO.#: OMO-IRFH4253DTRPBF

          		 MOSFET 25V Dual N-Ch 1.45mOhm 31nC 45A
          IRFH4251DTRPBF

          Mfr.#: IRFH4251DTRPBF

          OMO.#: OMO-IRFH4251DTRPBF

          		 MOSFET 25V Dual N-Ch 1.10mOhm 44nC 45A
          IRFH4257DTRPBF

          Mfr.#: IRFH4257DTRPBF

          OMO.#: OMO-IRFH4257DTRPBF

          		 MOSFET 25V FastIRFET 4x5 POWER BLOCK PKG
          IRFH4251DTRPBF-CUT TAPE

          Mfr.#: IRFH4251DTRPBF-CUT TAPE

          OMO.#: OMO-IRFH4251DTRPBF-CUT-TAPE-1190

          		 Nuovo e originale
          IRFH4253DTRPBF-CUT TAPE

          Mfr.#: IRFH4253DTRPBF-CUT TAPE

          OMO.#: OMO-IRFH4253DTRPBF-CUT-TAPE-1190

          		 Nuovo e originale
          IRFH4251DTRPBF

          Mfr.#: IRFH4251DTRPBF

          OMO.#: OMO-IRFH4251DTRPBF-INFINEON-TECHNOLOGIES

          		 MOSFET 2N-CH 25V 64A/188A PQFN
          IRFH4251DTRPBF.

          Mfr.#: IRFH4251DTRPBF.

          OMO.#: OMO-IRFH4251DTRPBF--1190

          		 MOSFET, DUAL N CHANNEL, 25V, 188A, PQFN-
          IRFH4253DTRPBF

          Mfr.#: IRFH4253DTRPBF

          OMO.#: OMO-IRFH4253DTRPBF-INFINEON-TECHNOLOGIES

          		 MOSFET 2N-CH 25V 64A/145A PQFN
          IRFH4257DTRPBF

          Mfr.#: IRFH4257DTRPBF

          OMO.#: OMO-IRFH4257DTRPBF-INFINEON-TECHNOLOGIES

          		 IGBT Transistors MOSFET 25V FastIRFET 4x5 POWER BLOCK PKG
          Disponibilità
          Azione:
          Available
          Su ordine:
          5500
          Inserisci la quantità:
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          Prezzo di riferimento (USD)
          Quantità
          Prezzo unitario
          est. Prezzo
          1
          1,28 USD
          1,28 USD
          10
          1,21 USD
          12,11 USD
          100
          1,15 USD
          114,75 USD
          500
          1,08 USD
          541,90 USD
          1000
          1,02 USD
          1 020,00 USD
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