HGTD10N40F1

HGTD10N40F1
Mfr. #:
HGTD10N40F1
Produttore:
Harris Semiconductor
Descrizione:
Insulated Gate Bipolar Transistor, 12A I(C), 400V V(BR)CES, N-Channel, TO-251AA
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
HGTD10N40F1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Tags
HGTD10, HGTD1, HGTD, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key Marketplace
10A, 400V N-CHANNEL IGBT
***el Nordic
Contact for details
Parte # Mfg. Descrizione Azione Prezzo
HGTD10N40F1Harris SemiconductorInsulated Gate Bipolar Transistor, 12A I(C), 400V V(BR)CES, N-Channel, TO-251AA
RoHS: Not Compliant
417
  • 1000:$0.8300
  • 500:$0.8700
  • 100:$0.9100
  • 25:$0.9500
  • 1:$1.0200
HGTD10N40F1SHarris SemiconductorInsulated Gate Bipolar Transistor, 12A I(C), 400V V(BR)CES, N-Channel, TO-252AA
RoHS: Not Compliant
1045
  • 1000:$0.8300
  • 500:$0.8700
  • 100:$0.9100
  • 25:$0.9500
  • 1:$1.0200
Immagine Parte # Descrizione
HGTD1N120BNS9A

Mfr.#: HGTD1N120BNS9A

OMO.#: OMO-HGTD1N120BNS9A

IGBT Transistors 5.3a 1200v N-Ch IGBT NPT Series
HGTD1N120BNS9A

Mfr.#: HGTD1N120BNS9A

OMO.#: OMO-HGTD1N120BNS9A-ON-SEMICONDUCTOR

IGBT 1200V 5.3A 60W TO252AA
HGTD10N40F1

Mfr.#: HGTD10N40F1

OMO.#: OMO-HGTD10N40F1-1190

Insulated Gate Bipolar Transistor, 12A I(C), 400V V(BR)CES, N-Channel, TO-251AA
HGTD10N40F1S

Mfr.#: HGTD10N40F1S

OMO.#: OMO-HGTD10N40F1S-1190

Insulated Gate Bipolar Transistor, 12A I(C), 400V V(BR)CES, N-Channel, TO-252AA
HGTD10N50F1

Mfr.#: HGTD10N50F1

OMO.#: OMO-HGTD10N50F1-1190

Insulated Gate Bipolar Transistor, 12A I(C), 500V V(BR)CES, N-Channel, TO-251AA
HGTD10N50F1S

Mfr.#: HGTD10N50F1S

OMO.#: OMO-HGTD10N50F1S-1190

Insulated Gate Bipolar Transistor, 12A I(C), 500V V(BR)CES, N-Channel, TO-252AA
HGTD14N05B

Mfr.#: HGTD14N05B

OMO.#: OMO-HGTD14N05B-1190

Nuovo e originale
HGTD1N120B

Mfr.#: HGTD1N120B

OMO.#: OMO-HGTD1N120B-1190

Nuovo e originale
HGTD1N120BNS

Mfr.#: HGTD1N120BNS

OMO.#: OMO-HGTD1N120BNS-1190

IGBT Transistors NPTPIGBT TO252 5.3A 1200V
HGTD1N120BNS 1N120B

Mfr.#: HGTD1N120BNS 1N120B

OMO.#: OMO-HGTD1N120BNS-1N120B-1190

Nuovo e originale
Disponibilità
Azione:
Available
Su ordine:
5500
Inserisci la quantità:
Il prezzo attuale di HGTD10N40F1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
1,24 USD
1,24 USD
10
1,18 USD
11,83 USD
100
1,12 USD
112,05 USD
500
1,06 USD
529,15 USD
1000
1,00 USD
996,00 USD
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