PMZB350UPE,315

Mfr. #:: PMZB350UPE,315
Produttore:: Nexperia
Descrizione:: MOSFET 20 V, dual P-channel Trench MOSFET
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: PMZB350UPE,315 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: PMZB350UPE,315 Datasheet PMZB350UPE,315 Datasheet (P4-P6)PMZB350UPE,315 Datasheet (P7-P9)PMZB350UPE,315 Datasheet (P10-P12)PMZB350UPE,315 Datasheet (P13-P15)
ECAD Model:
Maggiori informazioni:: PMZB350UPE,315 maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore:: Nexperia

Categoria di prodotto:: MOSFET

RoHS:: Y

Tecnologia:: si

Stile di montaggio:: SMD/SMT

Pacchetto/custodia:: DFN-1006B-3

Numero di canali:: 2 Channel

Polarità del transistor:: Canale P

Vds - Tensione di rottura Drain-Source:: 20 V

Id - Corrente di scarico continua:: 1.4 A

Rds On - Resistenza Drain-Source:: 940 mOhms

Vgs th - Tensione di soglia gate-source:: 450 mV

Vgs - Tensione Gate-Source:: 8 V

Qg - Carica cancello:: 1.3 nC

Temperatura di esercizio minima:: - 55 C

Temperatura massima di esercizio:: + 150 C

Pd - Dissipazione di potenza:: 715 mW

Configurazione:: Dual

Modalità canale:: Aumento

Confezione:: Bobina

Tipo di transistor:: 2 P-Channel

Marca:: Nexperia

Transconduttanza diretta - Min:: 1.4 S

Tempo di caduta:: 9 ns

Tipologia di prodotto:: MOSFET

Ora di alzarsi:: 5 ns

Quantità confezione di fabbrica:: 10000

sottocategoria:: MOSFET

Tempo di ritardo allo spegnimento tipico:: 26 ns

Tempo di ritardo di accensione tipico:: 4 ns

Unità di peso:: 0.000024 oz

Tags: PMZB35, PMZB3, PMZB, PMZ

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

PMZB350UPE,315 Descrizione

***ark: Mosfet Transistor, P Channel, -1.4 A, -20 V, 0.33 Ohm, -4.5 V, -700 Mv Rohs Compliant: Yes

***peria: PMZB350UPE - 20 V, single P-channel Trench MOSFET

***ure Electronics: PMZ350UPE Series 20 V 715 mW 1.9nC Surface Mount P-Channel TrenchMOS FET - DFN-3

***p One Stop Japan: Trans MOSFET P-CH 20V 1A 3-Pin DFN-B T/R

***et: Trans MOSFET P-CH 20V 1A 3-Pin DFN T/R

***i-Key: MOSFET P-CH SINGLE 20V 3DFN

***ment14 APAC: Prices include import duty and tax. MOSFET, P CH, 20V, 1.4A, DFN1006B-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-1.4A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.33ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-700mV; Power Dissipation Pd:715mW; Transistor Case Style:SOT-883B; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Operating Temperature Min:-55°C

***nell: MOSFET, CANALE P, 20V, 1.4A, DFN1006B-3; Polarità Transistor:Canale P; Corrente Continua di Drain Id:-1.4A; Tensione Drain Source Vds:-20V; Resistenza di Attivazione Rds(on):0.33ohm; Tensione Vgs di Misura Rds(on):-4.5V; Tensione di Soglia Vgs:-700mV; Dissipazione di Potenza Pd:715mW; Modello Case Transistor:SOT-883B; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Temperatura di Esercizio Min:-55°C

PMZB350UPE,315 Maggiori informazioni

PMZB350UPE 20V P-Channel Trench MOSFET: Nexperia PMZB350UPE 20V P-Channel Trench MOSFET is an enhancement mode field-effect transistor (FET) in a leadless, ultra-small DFN1006B-3 (SOT883B) surface-mounted device (SMD) plastic package. The device employs Trench MOSFET technology, has a low threshold voltage, provides very fast switching, and offers 1.8kV ESD protection. The PMZB350UPE MOSFET is ideal for relay drivers, high-speed line drivers, high-side load switches, and switching circuits.Learn More

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
PMZB350UPE,315 DISTI # V36:1790_06540614	Nexperia	Trans MOSFET P-CH 20V 1A 3-Pin DFN T/R RoHS: Compliant	60000	50000:$0.0886 20000:$0.0912 10000:$0.0988
PMZB350UPE,315 DISTI # V72:2272_06540614	Nexperia	Trans MOSFET P-CH 20V 1A 3-Pin DFN T/R RoHS: Compliant	19420	15000:$0.0988 6000:$0.1048 3000:$0.1108 1000:$0.1168 500:$0.1324 250:$0.1471 100:$0.1634 25:$0.2980 10:$0.3312 1:$0.4389
PMZB350UPE,315 DISTI # 1727-1243-1-ND	Nexperia	MOSFET P-CH 20V 1A 3DFN RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	368In Stock	1000:$0.1326 500:$0.1768 100:$0.2357 10:$0.3460 1:$0.4300
PMZB350UPE,315 DISTI # 1727-1243-6-ND	Nexperia	MOSFET P-CH 20V 1A 3DFN RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	368In Stock	1000:$0.1326 500:$0.1768 100:$0.2357 10:$0.3460 1:$0.4300
PMZB350UPE,315 DISTI # 1727-1243-2-ND	Nexperia	MOSFET P-CH 20V 1A 3DFN RoHS: Compliant Min Qty: 10000 Container: Tape & Reel (TR)	Temporarily Out of Stock	30000:$0.0951 10000:$0.1037
PMZB350UPE,315 DISTI # 32401912	Nexperia	Trans MOSFET P-CH 20V 1A 3-Pin DFN T/R RoHS: Compliant	60000	10000:$0.0988
PMZB350UPE,315 DISTI # 27512953	Nexperia	Trans MOSFET P-CH 20V 1A 3-Pin DFN T/R RoHS: Compliant	19420	62:$0.4389
PMZB350UPE,315 DISTI # PMZB350UPE,315	Nexperia	Trans MOSFET P-CH 20V 1A 3-Pin DFN T/R (Alt: PMZB350UPE,315) RoHS: Compliant Min Qty: 20000 Container: Tape and Reel	Asia - 20000	40000:$0.0300 20000:$0.0300
PMZB350UPE,315 DISTI # PMZB350UPE,315	Nexperia	Trans MOSFET P-CH 20V 1A 3-Pin DFN T/R - Tape and Reel (Alt: PMZB350UPE,315) RoHS: Compliant Min Qty: 10000 Container: Reel	Americas - 10000	100000:$0.0879 60000:$0.0899 40000:$0.0919 20000:$0.0949 10000:$0.0969
PMZB350UPE,315 DISTI # PMZB350UPE,315	Nexperia	Trans MOSFET P-CH 20V 1A 3-Pin DFN T/R (Alt: PMZB350UPE,315) RoHS: Compliant Min Qty: 10000 Container: Tape and Reel	Europe - 10000	100000:€0.0429 60000:€0.0461 40000:€0.0546 20000:€0.0667 10000:€0.0857
PMZB350UPE315 DISTI # PMZB350UPE315	Avnet, Inc.	- Bulk (Alt: PMZB350UPE315) Min Qty: 3572 Container: Bulk	Americas - 0	35720:$0.0839 17860:$0.0859 10716:$0.0879 7144:$0.0899 3572:$0.0919
PMZB350UPE,315 DISTI # 84W8085	Nexperia	MOSFET Transistor, P Channel, -1.4 A, -20 V, 0.33 ohm, -4.5 V, -700 mV RoHS Compliant: Yes	1684	2500:$0.0920 1000:$0.1100 500:$0.1430 100:$0.1740 10:$0.3200 1:$0.4240
PMZB350UPE,315 DISTI # 771-PMZB350UPE315	Nexperia	MOSFET 20 V, dual P-channel Trench MOSFET RoHS: Compliant	12032	1:$0.4200 10:$0.3170 100:$0.1720 1000:$0.1290 2500:$0.1110 10000:$0.1040 20000:$0.0960 50000:$0.0920
PMZB350UPE315	NXP Semiconductors	Now Nexperia PMZB350UPE - Small Signal Field-Effect Transistor, XQFN3 RoHS: Not Compliant	170000	1000:$0.0900 100:$0.1000 500:$0.1000 1:$0.1100 25:$0.1100
PMZB350UPE315	Nexperia	Now Nexperia PMZB350UPE - Small Signal Field-Effect Transistor, XQFN3 RoHS: Not Compliant	100000	1000:$0.0900 100:$0.1000 500:$0.1000 1:$0.1100 25:$0.1100
PMZB350UPE,315 DISTI # 2311205	Nexperia	MOSFET, P CH, 20V, 1.4A, DFN1006B-3 RoHS: Compliant	1684	20000:$0.0790 10000:$0.0850 5000:$0.0900 1000:$0.1060 500:$0.1240 100:$0.1540 10:$0.2390 1:$0.2880
PMZB350UPE,315 DISTI # 2311205	Nexperia	MOSFET, P CH, 20V, 1.4A, DFN1006B-3	2337	500:£0.1030 250:£0.1240 100:£0.1260 25:£0.2510 5:£0.2750

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Disponibilità

Azione:: Available
Su ordine:: 1987
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Il prezzo attuale di PMZB350UPE,315 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,42 USD~~; ~~0,42 USD~~

10: ~~0,32 USD~~; ~~3,17 USD~~

100: ~~0,17 USD~~; ~~17,20 USD~~

1000: ~~0,13 USD~~; ~~129,00 USD~~

2500: ~~0,11 USD~~; ~~277,50 USD~~

A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.

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PMZB350UPE,315

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes