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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| BGA7H1N6E6327XTSA1 DISTI # V36:1790_06384790 | Infineon Technologies AG | GPS Amp Single Low Noise 2.69GHz 3.3V 6-Pin TSNP T/R | 0 |
|
| BGA7H1N6E6327XTSA1 DISTI # BGA7H1N6E6327XTSA1CT-ND | Infineon Technologies AG | IC AMP LTE 2.3-2.69GHZ TSNP6-2 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 14239In Stock |
|
| BGA7H1N6E6327XTSA1 DISTI # BGA7H1N6E6327XTSA1DKR-ND | Infineon Technologies AG | IC AMP LTE 2.3-2.69GHZ TSNP6-2 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 14239In Stock |
|
| BGA7H1N6E6327XTSA1 DISTI # BGA7H1N6E6327XTSA1TR-ND | Infineon Technologies AG | IC AMP LTE 2.3-2.69GHZ TSNP6-2 RoHS: Compliant Min Qty: 15000 Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
| BGA7H1N6E6327XTSA1 DISTI # BGA 7H1N6 E6327 | Infineon Technologies AG | RF Amp Chip Single General Purpose Amplifier 2.69GHz 3.3V 6-Pin TSNP T/R (Alt: BGA 7H1N6 E6327) RoHS: Compliant Min Qty: 15000 Container: Tape and Reel | Asia - 0 |
|
| BGA7H1N6E6327XTSA1 DISTI # BGA7H1N6E6327XTSA1 | Infineon Technologies AG | RF Amp Chip Single General Purpose Amplifier 2.69GHz 3.3V 6-Pin TSNP T/R - Tape and Reel (Alt: BGA7H1N6E6327XTSA1) RoHS: Compliant Min Qty: 15000 Container: Reel | Americas - 0 |
|
| BGA7H1N6E6327XTSA1 DISTI # SP001109130 | Infineon Technologies AG | RF Amp Chip Single General Purpose Amplifier 2.69GHz 3.3V 6-Pin TSNP T/R (Alt: SP001109130) RoHS: Compliant Min Qty: 15000 Container: Tape and Reel | Europe - 0 |
|
| BGA7H1N6E6327XTSA1 DISTI # 68AC4393 | Infineon Technologies AG | LNA, 12.5DB, 2.3GHZ-2.69GHZ, TSNP-6,Frequency Min:2.3GHz,Frequency Max:2.69GHz,Gain:12.5dB,Noise Figure Typ:0.65dB,RF IC Case Style:TSNP,No. of Pins:6Pins,Supply Voltage Min:1.5V,Supply Voltage Max:3.3V,Operating TemperatureRoHS Compliant: Yes | 0 |
|
| BGA7H1N6E6327XTSA1 DISTI # 726-BGA7H1N6E6327XTS | Infineon Technologies AG | RF Amplifier RF SILICON MMIC RoHS: Compliant | 15695 |
|
| BGA7H1N6E6327XTSA1 DISTI # 2565692 | Infineon Technologies AG | LNA, 12.5DB, 2.3GHZ-2.69GHZ, TSNP-6 | 14950 |
|
| BGA7H1N6E6327XTSA1 DISTI # 2565692 | Infineon Technologies AG | LNA, 12.5DB, 2.3GHZ-2.69GHZ, TSNP-6 RoHS: Compliant | 15000 |
|
| BGA7H1N6E6327 | Infineon Technologies AG | Silicon Germanium Low Noise Amp for LTE | 40 |
|
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: BGA7H1N6E6327XTSA1 OMO.#: OMO-BGA7H1N6E6327XTSA1 |
RF Amplifier RF SILICON MMIC |
|
Mfr.#: BGA7H1N6 |
Nuovo e originale |
|
|
Mfr.#: BGA7H1N6 E6327 |
Nuovo e originale |
|
|
Mfr.#: BGA7H1N6-E6327(AN) OMO.#: OMO-BGA7H1N6-E6327-AN--1190 |
Nuovo e originale |
|
|
Mfr.#: BGA7H1N6E6327 |
Silicon Germanium Low Noise Amp for LTE |
|
|
Mfr.#: BGA7H1N6E6327XTSA1INFINE |
Nuovo e originale |
|
Mfr.#: BGA7H1N6E6327XTSA1 |
RF Amplifier RF SILICON MMIC |
