BSC093N04LSGATMA1

BSC093N04LSGATMA1
Mfr. #:
BSC093N04LSGATMA1
Produttore:
Infineon Technologies
Descrizione:
MOSFET N-CH 40V 49A TDSON-8
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
BSC093N04LSGATMA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
BSC093N04LSGATMA1 DatasheetBSC093N04LSGATMA1 Datasheet (P4)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore
Tecnologie Infineon
categoria di prodotto
FET - Single
Serie
OptiMOS
Confezione
Imballaggio alternativo Digi-ReelR
Alias ​​parziali
BSC093N04LS BSC093N04LSGXT G SP000387929
Stile di montaggio
SMD/SMT
Nome depositato
OptiMOS
Pacchetto-Custodia
8-PowerTDFN
Tecnologia
si
Temperatura di esercizio
-55°C ~ 150°C (TJ)
Tipo di montaggio
Montaggio superficiale
Numero di canali
1 Channel
Pacchetto-dispositivo-fornitore
PG-TDSON-8
Configurazione
Separare
Tipo FET
MOSFET N-Channel, ossido di metallo
Potenza-Max
35W
Tipo a transistor
1 N-Channel
Drain-to-Source-Voltage-Vdss
40V
Ingresso-Capacità-Ciss-Vds
1900pF @ 20V
Funzione FET
Porta livello logico
Corrente-Continuo-Scarico-Id-25°C
13A (Ta), 49A (Tc)
Rds-On-Max-Id-Vgs
9.3 mOhm @ 40A, 10V
Vgs-th-Max-Id
2V @ 14μA
Gate-Carica-Qg-Vgs
24nC @ 10V
Pd-Power-Dissipazione
35 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
2.8 ns
Ora di alzarsi
2.4 ns
Vgs-Gate-Source-Voltage
+/- 20 V
Id-Continuo-Scarico-Corrente
49 A
Vds-Drain-Source-Breakdown-Voltage
40 V
Vgs-th-Gate-Sorgente-Soglia-Tensione
2 V
Rds-On-Drain-Source-Resistenza
9.3 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
16 ns
Tempo di ritardo all'accensione tipico
3.6 ns
Qg-Gate-Carica
18 nC
Transconduttanza diretta-Min
67 S
Modalità canale
Aumento
Tags
BSC093N04LSGA, BSC093N04LSG, BSC093N0, BSC093, BSC09, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Parte # Mfg. Descrizione Azione Prezzo
BSC093N04LSGATMA1
DISTI # BSC093N04LSGATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 40V 49A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
On Order
  • 5000:$0.3323
BSC093N04LSGATMA1
DISTI # BSC093N04LSGATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 40V 49A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 1000:$0.4057
  • 500:$0.5071
  • 100:$0.6846
  • 10:$0.8870
  • 1:$1.0100
BSC093N04LSGATMA1
DISTI # BSC093N04LSGATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 40V 49A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 1000:$0.4057
  • 500:$0.5071
  • 100:$0.6846
  • 10:$0.8870
  • 1:$1.0100
BSC093N04LSGATMA1
DISTI # BSC093N04LSGATMA1
Infineon Technologies AGTrans MOSFET N-CH 40V 13A 8-Pin TDSON EP - Tape and Reel (Alt: BSC093N04LSGATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 5000:$0.2569
  • 10000:$0.2479
  • 20000:$0.2389
  • 30000:$0.2309
  • 50000:$0.2269
BSC093N04LSGATMA1.
DISTI # 27AC1075
Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:49A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0078ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.2V,Power Dissipation Pd:35W,No. of Pins:8Pins RoHS Compliant: Yes0
  • 1:$0.2570
  • 10000:$0.2480
  • 20000:$0.2390
  • 30000:$0.2310
  • 50000:$0.2270
BSC093N04LSGATMA1
DISTI # 726-BSC093N04LSGATMA
Infineon Technologies AGMOSFET N-Ch 40V 49A TDSON-8 OptiMOS 3
RoHS: Compliant
5260
  • 1:$0.8400
  • 10:$0.6940
  • 100:$0.4480
  • 1000:$0.3590
BSC093N04LS G
DISTI # 726-BSC093N04LSG
Infineon Technologies AGMOSFET N-Ch 40V 49A TDSON-8 OptiMOS 3
RoHS: Compliant
0
  • 1:$0.8400
  • 10:$0.6940
  • 100:$0.4480
  • 1000:$0.3590
BSC093N04LSGATMA1
DISTI # 7528164P
Infineon Technologies AGMOSFET N-CHANNEL 40V 13A OPTIMOS3 TDSON8, RL4850
  • 50:£0.4380
  • 250:£0.2820
  • 1250:£0.2240
  • 2500:£0.2200
BSC093N04LSGATMA1
DISTI # 1775460
Infineon Technologies AGMOSFET, N CH, 49A, 40V, PG-TDSON-8
RoHS: Compliant
0
  • 1:$1.3400
  • 10:$1.1100
  • 100:$0.7090
  • 1000:$0.5690
  • 5000:$0.5010
BSC093N04LSGATMA1
DISTI # 1775460
Infineon Technologies AGMOSFET, N CH, 49A, 40V, PG-TDSON-8
RoHS: Compliant
0
  • 5:£0.5020
  • 25:£0.4730
  • 100:£0.3400
Immagine Parte # Descrizione
BSC093N04LS G

Mfr.#: BSC093N04LS G

OMO.#: OMO-BSC093N04LS-G

MOSFET N-Ch 40V 49A TDSON-8 OptiMOS 3
BSC093N04LS

Mfr.#: BSC093N04LS

OMO.#: OMO-BSC093N04LS-1190

Nuovo e originale
BSC093N04LS G

Mfr.#: BSC093N04LS G

OMO.#: OMO-BSC093N04LS-G-1190

Trans MOSFET N-CH 40V 13A 8-Pin TDSON T/R (Alt: BSC093N04LS G)
BSC093N04LSG

Mfr.#: BSC093N04LSG

OMO.#: OMO-BSC093N04LSG-1190

40V,49A,N Channel Power MOSFET
BSC093N04LSGATMA1

Mfr.#: BSC093N04LSGATMA1

OMO.#: OMO-BSC093N04LSGATMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 40V 49A TDSON-8
BSC093N04LSGATMA1 , TDZ

Mfr.#: BSC093N04LSGATMA1 , TDZ

OMO.#: OMO-BSC093N04LSGATMA1-TDZ-1190

Nuovo e originale
BSC093N04LSGATMA1-CUT TAPE

Mfr.#: BSC093N04LSGATMA1-CUT TAPE

OMO.#: OMO-BSC093N04LSGATMA1-CUT-TAPE-1190

Nuovo e originale
Disponibilità
Azione:
Available
Su ordine:
2500
Inserisci la quantità:
Il prezzo attuale di BSC093N04LSGATMA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
0,34 USD
0,34 USD
10
0,32 USD
3,23 USD
100
0,31 USD
30,63 USD
500
0,29 USD
144,65 USD
1000
0,27 USD
272,30 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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