IPB60R520CP

IPB60R520CP
Mfr. #:
IPB60R520CP
Produttore:
Rochester Electronics, LLC
Descrizione:
IGBT Transistors MOSFET N-Ch 600V 6.8A D2PAK-2 CoolMOS CP
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IPB60R520CP Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore
INFINEON
categoria di prodotto
FET - Single
Serie
CoolMOS CP
Confezione
Bobina
Alias ​​parziali
IPB60R520CPATMA1 SP000405868
Unità di peso
0.139332 oz
Stile di montaggio
SMD/SMT
Nome depositato
CoolMOS
Pacchetto-Custodia
TO-252-3
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Separare
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
66 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
16 ns
Ora di alzarsi
12 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
6.8 A
Vds-Drain-Source-Breakdown-Voltage
600 V
Rds-On-Drain-Source-Resistenza
520 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
74 ns
Tempo di ritardo all'accensione tipico
17 ns
Modalità canale
Aumento
Tags
IPB60R, IPB60, IPB6, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 600V 6.8A 3-Pin(2+Tab) TO-263
***ark
MOSFET, N CHANNEL, 650V, 6.8A, TO-263
***i-Key
MOSFET N-CH 650V 6.8A TO-263
***ment14 APAC
MOSFET, N, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:6.8A; Drain Source Voltage Vds:650V; On Resistance Rds(on):520mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:66W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:6.8A; Package / Case:TO-263; Power Dissipation Pd:66W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***nell
MOSFET, N, TO-263; Biegunowość tranzystora:Kanał N; Prąd ciągły Id drenu:6.8A; Napięcie drenu / źródła Vds:650V; Rezystancja przewodzenia Rds(on):0.47ohm; Napięcie Vgs pomiaru Rds(on):10V; Napięcie progowe Vgs:3V; Straty mocy Pd:66W; Rodzaj obudowy tranzystora:TO-263; Liczba pinów:3piny/-ów; Temperatura robocza, maks.:150°C; Asortyment produktów:-; Kwalifikacja motoryzacyjna:-; Wskaźnik wrażliwości na wilgoć MSL:MSL 1 - nieograniczone; Substancje SVHC:No SVHC (27-Jun-2018); Maks. prąd Id:6.8A; Napięcie Vds, typ.:650V; Napięcie Vgs pomiaru Rds on:10V; Napięcie Vgs, maks.:20V; Rodzaj tranzystora:Mocy MOSFET; Temperatura robocza, min.:-55°C; Typ zakończenia:Do montażu powierzchniowego; Zakres temperatury roboczej:-55°C do +150°C
Parte # Mfg. Descrizione Azione Prezzo
IPB60R520CPATMA1
DISTI # IPB60R520CPATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 600V 6.8A TO-263
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Limited Supply - Call
    IPB60R520CPATMA1
    DISTI # IPB60R520CPATMA1CT-ND
    Infineon Technologies AGMOSFET N-CH 600V 6.8A TO-263
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      IPB60R520CPATMA1
      DISTI # IPB60R520CPATMA1DKR-ND
      Infineon Technologies AGMOSFET N-CH 600V 6.8A TO-263
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        IPB60R520CP
        DISTI # 33P7139
        Infineon Technologies AGMOSFET, N CHANNEL, 650V, 6.8A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:6.8A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.47ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V , RoHS Compliant: Yes0
          IPB60R520CPInfineon Technologies AGPower Field-Effect Transistor, 6.8A I(D), 600V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
          RoHS: Compliant
          12996
          • 1000:$0.8100
          • 500:$0.8500
          • 100:$0.8900
          • 25:$0.9200
          • 1:$1.0000
          IPB60R520CP
          DISTI # 726-IPB60R520CP
          Infineon Technologies AGMOSFET N-Ch 600V 6.8A D2PAK-2 CoolMOS CP
          RoHS: Compliant
          132
          • 1:$2.4100
          • 10:$1.8600
          • 100:$1.6900
          • 250:$1.5200
          • 500:$1.3100
          • 1000:$1.1000
          • 2000:$0.9190
          • 5000:$0.8990
          Immagine Parte # Descrizione
          IPB60R045P7ATMA1

          Mfr.#: IPB60R045P7ATMA1

          OMO.#: OMO-IPB60R045P7ATMA1

          MOSFET
          IPB60R190C6

          Mfr.#: IPB60R190C6

          OMO.#: OMO-IPB60R190C6

          MOSFET N-Ch 600V 20.2A D2PAK-2 CoolMOS C6
          IPB60R099CP

          Mfr.#: IPB60R099CP

          OMO.#: OMO-IPB60R099CP

          MOSFET N-Ch 650V 31A D2PAK-2 CoolMOS CP
          IPB60R160C6

          Mfr.#: IPB60R160C6

          OMO.#: OMO-IPB60R160C6

          MOSFET N-Ch 650V 23.8A D2PAK-2 CoolMOS C6
          IPB60R070CFD7ATMA1

          Mfr.#: IPB60R070CFD7ATMA1

          OMO.#: OMO-IPB60R070CFD7ATMA1

          MOSFET
          IPB60R170CFD7ATMA1

          Mfr.#: IPB60R170CFD7ATMA1

          OMO.#: OMO-IPB60R170CFD7ATMA1

          MOSFET
          IPB60R099CPATMA1

          Mfr.#: IPB60R099CPATMA1

          OMO.#: OMO-IPB60R099CPATMA1-INFINEON-TECHNOLOGIES

          MOSFET N-CH 600V 31A D2PAK
          IPB60R299CPAATMA1

          Mfr.#: IPB60R299CPAATMA1

          OMO.#: OMO-IPB60R299CPAATMA1-INFINEON-TECHNOLOGIES

          MOSFET N-CH TO263-3
          IPB60R600P6ATMA1

          Mfr.#: IPB60R600P6ATMA1

          OMO.#: OMO-IPB60R600P6ATMA1-INFINEON-TECHNOLOGIES

          MOSFET N-CH TO263-3
          IPB60R199CPAXT

          Mfr.#: IPB60R199CPAXT

          OMO.#: OMO-IPB60R199CPAXT-1190

          Trans MOSFET N-CH 600V 16A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB60R199CPAATMA1)
          Disponibilità
          Azione:
          Available
          Su ordine:
          4500
          Inserisci la quantità:
          Il prezzo attuale di IPB60R520CP è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
          Prezzo di riferimento (USD)
          Quantità
          Prezzo unitario
          est. Prezzo
          1
          1,08 USD
          1,08 USD
          10
          1,03 USD
          10,26 USD
          100
          0,97 USD
          97,20 USD
          500
          0,92 USD
          459,00 USD
          1000
          0,86 USD
          864,00 USD
          A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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