SPU01N60C3

SPU01N60C3
Mfr. #:
SPU01N60C3
Produttore:
Rochester Electronics, LLC
Descrizione:
Power Field-Effect Transistor, 0.8A I(D), 600V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SPU01N60C3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore
INFINEON
categoria di prodotto
FET - Single
Serie
CoolMOS C3
Confezione
Tubo
Alias ​​parziali
SP000012110 SPU01N60C3BKMA1 SPU01N60C3XK
Unità di peso
0.139332 oz
Stile di montaggio
Foro passante
Nome depositato
CoolMOS
Pacchetto-Custodia
IPAK-3
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Separare
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
11 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
30 ns
Ora di alzarsi
25 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
800 mA
Vds-Drain-Source-Breakdown-Voltage
600 V
Rds-On-Drain-Source-Resistenza
6 Ohms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
55 ns
Tempo di ritardo all'accensione tipico
30 ns
Modalità canale
Aumento
Tags
SPU01N60C, SPU01N6, SPU01N, SPU01, SPU0, SPU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Parte # Mfg. Descrizione Azione Prezzo
SPU01N60C3BKMA1
DISTI # SPU01N60C3BKMA1-ND
Infineon Technologies AGMOSFET N-CH 650V 0.8A TO-251
RoHS: Compliant
Min Qty: 1
Container: Tube
714In Stock
  • 500:$0.6690
  • 100:$0.8627
  • 10:$1.0920
  • 1:$1.2300
SPU01N60C3BKMA1
DISTI # 34AC1977
Infineon Technologies AGMOSFET, N-CH, 600V, 0.8A, TO-251-3,Transistor Polarity:N Channel,Continuous Drain Current Id:800mA,Drain Source Voltage Vds:600V,On Resistance Rds(on):5.6ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power , RoHS Compliant: Yes1518
  • 1:$0.9670
  • 10:$0.8290
  • 100:$0.6360
  • 500:$0.5630
  • 1000:$0.4900
  • 2500:$0.3980
  • 10000:$0.3850
SPU01N60C3Infineon Technologies AGPower Field-Effect Transistor, 0.8A I(D), 600V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
RoHS: Compliant
151435
  • 1000:$0.4300
  • 500:$0.4500
  • 100:$0.4700
  • 25:$0.4900
  • 1:$0.5300
SPU01N60C3BKMA1Infineon Technologies AG 
RoHS: Not Compliant
1875
  • 1000:$0.4900
  • 500:$0.5100
  • 100:$0.5300
  • 25:$0.5600
  • 1:$0.6000
SPU01N60C3
DISTI # 726-SPU01N60C3
Infineon Technologies AGMOSFET N-Ch 600V 800mA IPAK-3 CoolMOS C3
RoHS: Compliant
404
  • 1:$1.0600
  • 10:$0.8970
  • 100:$0.6890
  • 500:$0.6090
  • 1000:$0.4810
SPU01N60C3BKMA1
DISTI # N/A
Infineon Technologies AGMOSFET LOW POWER_LEGACY0
    SPU01N60C3Infineon Technologies AGINSTOCK983
      SPU01N60C3Infineon Technologies AG600V,0.8A,N channel Power MOSFET800
      • 1:$0.6900
      • 100:$0.5700
      • 500:$0.5100
      • 1000:$0.4900
      SPU01N60C3BKMA1
      DISTI # 2781200
      Infineon Technologies AGMOSFET, N-CH, 600V, 0.8A, TO-251-3
      RoHS: Compliant
      1518
      • 5:$1.5400
      • 25:$1.3400
      • 100:$1.1000
      • 250:$0.9250
      • 500:$0.8000
      • 1000:$0.7570
      • 5000:$0.7180
      SPU01N60C3BKMA1
      DISTI # 2781200
      Infineon Technologies AGMOSFET, N-CH, 600V, 0.8A, TO-251-3
      RoHS: Compliant
      1528
      • 5:£1.0200
      • 25:£0.9190
      • 100:£0.7260
      • 250:£0.6450
      • 500:£0.5630
      Immagine Parte # Descrizione
      SPU01N60C3BKMA1

      Mfr.#: SPU01N60C3BKMA1

      OMO.#: OMO-SPU01N60C3BKMA1

      MOSFET LOW POWER_LEGACY
      SPU01L-05

      Mfr.#: SPU01L-05

      OMO.#: OMO-SPU01L-05-MEAN-WELL

      DC DC CONVERTER 5V 1W
      SPU01L-05B3

      Mfr.#: SPU01L-05B3

      OMO.#: OMO-SPU01L-05B3-1190

      Nuovo e originale
      SPU01N50

      Mfr.#: SPU01N50

      OMO.#: OMO-SPU01N50-1190

      Nuovo e originale
      SPU01N50M2

      Mfr.#: SPU01N50M2

      OMO.#: OMO-SPU01N50M2-1190

      Nuovo e originale
      SPU01N60

      Mfr.#: SPU01N60

      OMO.#: OMO-SPU01N60-1190

      Nuovo e originale
      SPU01N60C3

      Mfr.#: SPU01N60C3

      OMO.#: OMO-SPU01N60C3-1190

      Power Field-Effect Transistor, 0.8A I(D), 600V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
      SPU01N60C3,01N60C3

      Mfr.#: SPU01N60C3,01N60C3

      OMO.#: OMO-SPU01N60C3-01N60C3-1190

      Nuovo e originale
      SPU01N60C3BKMA1

      Mfr.#: SPU01N60C3BKMA1

      OMO.#: OMO-SPU01N60C3BKMA1-INFINEON-TECHNOLOGIES

      MOSFET N-CH 650V 0.8A TO-251
      SPU01N60S5

      Mfr.#: SPU01N60S5

      OMO.#: OMO-SPU01N60S5-1190

      Power Field-Effect Transistor, 0.8A I(D), 600V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
      Disponibilità
      Azione:
      Available
      Su ordine:
      3000
      Inserisci la quantità:
      Il prezzo attuale di SPU01N60C3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
      Prezzo di riferimento (USD)
      Quantità
      Prezzo unitario
      est. Prezzo
      1
      0,57 USD
      0,57 USD
      10
      0,54 USD
      5,42 USD
      100
      0,51 USD
      51,30 USD
      500
      0,48 USD
      242,25 USD
      1000
      0,46 USD
      456,00 USD
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