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SIR870ADP-T1-GE3

SIR870ADP-T1-GE3
Mfr. #:
SIR870ADP-T1-GE3
Produttore:
Vishay
Descrizione:
Darlington Transistors MOSFET 100V 6.6mOhm@10V 60A N-Ch MV T-FET
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SIR870ADP-T1-GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
SIR870ADP-T1-GE3 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
VISHAY
categoria di prodotto
FET - Single
Serie
TrinceaFETR
Confezione
Imballaggio alternativo Digi-ReelR
Alias ​​parziali
SIR870ADP-GE3
Unità di peso
0.017870 oz
Stile di montaggio
SMD/SMT
Nome depositato
ThunderFET TrenchFET
Pacchetto-Custodia
PowerPAKR SO-8
Tecnologia
si
Temperatura di esercizio
-55°C ~ 150°C (TJ)
Tipo di montaggio
Montaggio superficiale
Numero di canali
1 Channel
Pacchetto-dispositivo-fornitore
PowerPAKR SO-8
Configurazione
Separare
Tipo FET
MOSFET N-Channel, ossido di metallo
Potenza-Max
104W
Tipo a transistor
1 N-Channel
Drain-to-Source-Voltage-Vdss
100V
Ingresso-Capacità-Ciss-Vds
2866pF @ 50V
Funzione FET
Standard
Corrente-Continuo-Scarico-Id-25°C
60A (Tc)
Rds-On-Max-Id-Vgs
6.6 mOhm @ 20A, 10V
Vgs-th-Max-Id
3V @ 250μA
Gate-Carica-Qg-Vgs
80nC @ 10V
Pd-Power-Dissipazione
104 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
9 ns
Ora di alzarsi
15 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
60 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Vgs-th-Gate-Sorgente-Soglia-Tensione
3 V
Rds-On-Drain-Source-Resistenza
6.6 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
33 ns
Tempo di ritardo all'accensione tipico
17 ns
Qg-Gate-Carica
25.2 nC
Transconduttanza diretta-Min
68 S
Modalità canale
Aumento
Tags
SIR870, SIR87, SIR8, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 100 V 6.6 mOhm 25.5 nC SMT Power MOSFET - PowerPAK-SO-8
***et
Trans MOSFET N-CH 100V 23.3A 8-Pin PowerPAK SO T/R
***ark
N-CHANNEL 100V POWERPAK SO-8 THUNDERFET MOSFET
***nell
MOSFET, N-CH, 100V, PPAK-SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0055ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:104W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
ThunderFET® Power MOSFETs
Vishay Siliconix ThunderFET® Power MOSFETs offer the lowest values of on-resistance in the industry for 100V MOSFETs with 4.5V ratings. In addition to the product of on-resistance and gate charge - a key figure-of-merit (FOM) for MOSFETs in DC-DC Converter applications is also best in class. For designers, the lower on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. These devices are optimized for primary side switching and secondary side synchronous rectification in isolated DC/DC power supply designs for telecom brick and bus converter applications. The MOSFETs' 4.5 V rating for on-resistance allows a wide range of PWM and gate driver ICs to be considered.
Parte # Mfg. Descrizione Azione Prezzo
SIR870ADP-T1-GE3
DISTI # SIR870ADP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 100V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$1.0024
SIR870ADP-T1-GE3
DISTI # SIR870ADP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 100V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$1.1089
  • 500:$1.3384
  • 100:$1.7207
  • 10:$2.1410
  • 1:$2.3700
SIR870ADP-T1-GE3
DISTI # SIR870ADP-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 100V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$1.1089
  • 500:$1.3384
  • 100:$1.7207
  • 10:$2.1410
  • 1:$2.3700
SIR870ADP-T1-GE3
DISTI # SIR870ADP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 100V 23.3A 8-Pin PowerPAK SO T/R (Alt: SIR870ADP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    SIR870ADP-T1-GE3
    DISTI # SIR870ADP-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 100V 23.3A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR870ADP-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 3000:$0.9819
    • 6000:$0.9529
    • 12000:$0.9139
    • 18000:$0.8889
    • 30000:$0.8649
    SIR870ADP-T1-GE3
    DISTI # 94T2843    		Vishay IntertechnologiesMOSFET, N CHANNEL, 100V, 60A, POWERPAK SO-8,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0055ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.5V RoHS Compliant: Yes0
    • 1:$2.1000
    • 10:$1.7500
    • 25:$1.6200
    • 50:$1.4800
    • 100:$1.3500
    • 500:$1.1900
    • 1000:$0.9790
    SIR870ADP-T1-GE3
    DISTI # 94T2844    		Vishay IntertechnologiesMOSFET, N CHANNEL, 100V, 60A, POWERPAK SO-8, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0055ohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:8Pins RoHS Compliant: Yes0
    • 1:$0.9120
    • 3000:$0.8950
    • 6000:$0.8780
    SIR870ADP-T1-GE3.
    DISTI # 26AC3306    		Vishay IntertechnologiesMOSFET, N CHANNEL, 100V, 60A, POWERPAK SO-8, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0055ohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:8Pins RoHS Compliant: Yes0
    • 1:$0.9120
    • 3000:$0.8950
    • 6000:$0.8780
    SIR870ADP-T1-GE3
    DISTI # 78-SIR870ADP-T1-GE3    		Vishay IntertechnologiesMOSFET 100V Vds 20V Vgs PowerPAK SO-8
    RoHS: Compliant    		0
    • 1:$2.1000
    • 10:$1.7500
    • 100:$1.3500
    • 500:$1.1900
    • 1000:$0.9790
    • 3000:$0.9120
    • 6000:$0.8780
    SIR870ADP-T1-GE3
    DISTI # 2283692    		Vishay IntertechnologiesMOSFET, N-CH, 100V, PPAK-SO8
    RoHS: Compliant    		0
    • 5:£1.4700
    • 25:£1.3000
    • 100:£1.0400
    • 250:£0.9590
    • 500:£0.8770
    SIR870ADP-T1-GE3Vishay IntertechnologiesMOSFET 100V Vds 20V Vgs PowerPAK SO-8
    RoHS: Compliant    		Americas -
      SIR870ADP-T1-GE3
      DISTI # 2283692      		Vishay IntertechnologiesMOSFET, N-CH, 100V, PPAK-SO8
      RoHS: Compliant      		0
      • 1:$3.3200
      • 10:$2.7800
      • 100:$2.1400
      Immagine Parte # Descrizione
      SIR870ADP-T1-GE3

      Mfr.#: SIR870ADP-T1-GE3

      OMO.#: OMO-SIR870ADP-T1-GE3

      		 MOSFET 100V Vds 20V Vgs PowerPAK SO-8
      SIR870ADP-T1-RE3

      Mfr.#: SIR870ADP-T1-RE3

      OMO.#: OMO-SIR870ADP-T1-RE3

      		 MOSFET 100V Vds 20V Vgs PowerPAK SO-8
      SIR870ADP-T1-GE3

      Mfr.#: SIR870ADP-T1-GE3

      OMO.#: OMO-SIR870ADP-T1-GE3-VISHAY

      		 Darlington Transistors MOSFET 100V 6.6mOhm@10V 60A N-Ch MV T-FET
      SIR870ADP-T1-RE3

      Mfr.#: SIR870ADP-T1-RE3

      OMO.#: OMO-SIR870ADP-T1-RE3-VISHAY

      		 MOSFET N-CH 100V 60A POWERPAKSO
      Disponibilità
      Azione:
      Available
      Su ordine:
      3000
      Inserisci la quantità:
      Il prezzo attuale di SIR870ADP-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
      Prezzo di riferimento (USD)
      Quantità
      Prezzo unitario
      est. Prezzo
      1
      1,30 USD
      1,30 USD
      10
      1,23 USD
      12,32 USD
      100
      1,17 USD
      116,76 USD
      500
      1,10 USD
      551,35 USD
      1000
      1,04 USD
      1 037,90 USD
      A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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